• Tunnel and Underground Space
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• v.11 no.4
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• pp.352-361
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• 2001

Mode I fracture toughness ( $K_{IC}$) of the frozen rocks and that of the frozen-thawed rocks were obtained by using BDT and CCNBD specimens. The test temperatures ranged from +$25^{\circ}C$ to -16$0^{\circ}C$. Wet and air-dry specimens of granite and sandstone were used in order to investigate the effect of water and porosity on fracture toughness. The SEM images of the frozen-thawed rocks were also analysed to check the density of thermal cracks. The $K_{IC}$ of the frozen rocks increased as the test temperature went down. The rate of increase was higher in wet condition than in dry condition and the rate of increase for wet granite was higher than that for wet sandstone. The $K_{IC}$ of the frozen-thawed rocks varied within 15% from the $K_{IC}$ of the rocks at room temperature. After one freeze-thaw process, thermal crack occurred in granite but no thermal cracks occurred in sandstone. And the crack density was increased as the temperature went down.n.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.959-962
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• 2001

In this study, the piezoelectric and dielectric properties and Temperature stability of resonant frequency with MnO$_2$doped 0.36Pb(Sc$_{1}$2/Nb$_{1}$2/)O$_3$- 0.25Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$-0.39PbTiO$_3$(hereafter PSNNT) were investigated. The tetagonality of crystal structure was developed with increasing MnO$_2$additive content. With increasing MnO$_2$additive content, the electromechanical coupling factor and quality factor were increased. Electromechanical coupling k$_{p}$ and quality factor Q$_{m}$ at MnO$_2$doped with 2.0mol% were showed highest value of 55.6% and 252. In the case of specimen for MnO$_2$doped with 2mol%, temperature dependance of resonant frequency had a good properties.ies.

• The Bulletin of The Korean Astronomical Society
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• v.41 no.2
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• pp.44.2-45
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• 2016

We present near-infrared photometric properties of red supergiant stars (RSGs) in three galaxies NGC 4449, NGC 5055 and NGC 5457. The near-infrared imaging data of WFCAM UKIRT were used and combined with optical archive data to identify the RSGs in the galaxies. We found that the RSGs can be identified from the foreground Galactic stars in (i-K, ri) colour-colour diagram. The effective temperatures and luminosities of the identified RSGs are estimated from JHK photometry using MARCS model. In the H-R diagram, the majority of RSGs in the galaxies are distributed between $logL/L{\odot}=4.8$ and 5.7, and their effective temperature and luminosities agree with the current evolutionary tracks with masses in the range $9-30M{\odot}$. We also compared the spatial distribution of RSGs with the HII regions. A tight spatial correlation between RSGs and HII region was found in NGC 4449 and NGC 5457. We do not find a clear metallicity dependance on the RSG effective temperature in the three galaxies, but the maximum luminosity of the three galaxies is constant at $logL/L{\odot}{\sim}5.6$. Additional spectroscopy data, including photometry are essential to examine whether the physical properties of RSGs change with metallicity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.99-100
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• 2007

ZnO films on $Al_2O_3$ substrates were grown using a pulsed laser deposition method. Through photoluminescence (PL) and X-ray diffraction (XRD) measurements, the optimum growth conditions for the ZnO growth were established. The results of the XRD measurements indicate that ZnO films were strongly oriented to the c-axis of the hexagonal structure and epitaxially crystallized under constraints created by the substrate. The full width half maximum for a theta curve of the (0002) peak was $0.201^{\circ}$. Also, from the PL measurements, the grown ZnO films were observed to give free exciton behaviour, which indicates a high quality of the epilayer. The Hall mobility and carrier density of the ZnO films at 293 K were estimated to be $299\;cm^2/V\;s$ and $8.27\;{\times}\;10^{16}\;cm^{-3}$, respectively. The absorption spectra revealed that the temperature dependance of the optical band gap on the ZnO films was $E_g(T)\;=\;3.439\;eV\;-\;(5.30\;{\times}\;10^{-4}\;ev/K)T^2(367\;+\;T)$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.170-175
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• 2001

It was possible to grow the $Al_{2}O_{3}$ based $Y_{3}A_{5}O_{12}(YAG),ZrO_{2}$ binary and ternary eutectic fibers using micro-pulling down method with a growing rate of 0.1~15 mm/min. While $Al_{2}O_{3}/ZrO_{2}$ showed cellular-lamellar structure, $Al_{2}O_{3}$/YAG and $Al_{2}O_{3}$/YAG/$ZrO_{2}$ternary eutectic fibers showed homogeneous Chinese script lamellar structures. The microstructures of $Al_{2}O_{3}/ZrO_{2}$ binary eutectic fibers changed with solidification rate from lamellar pattern to cellular structure. The interlamellar spacing agreed with the inverse-square-root dependance on pulling rate according to $\lambda$=$kv_p\;{-1/2}$. $Al_{2}O_{3}/ZrO_{2}$ binary eutectic fibers recorded the highest tensile strength of about 1560MPa at room temperature. $Al_2O_3/YAG/ZrO_2$ternary eutectic fiber showed excellent thermal stability to $1200^{\circ}C$ without significant decrease. The maximum strength of ternary eutectic fibers recorded were 1100MPa at $25^{\circ}C$ and 970MPa at $1200^{\circ}C$, respectively.

• Journal of Sensor Science and Technology
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• v.3 no.3
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• pp.36-44
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• 1994

A fiber-optic temperature sensor utilizing InP as a sensing medium was implemented and tested to determine the dependance of the optical characteristics of InP on physical parameters for the use as design parameters in this type of sensors. The optical absorption coefficient of InP has been determined through the experimental measurement of the fundamental optical absorption characteristics at various temperature points. The transmission characteristics of light source at three temperature points($249^{\circ}K$, $298^{\circ}K$, $369^{\circ}K$) are computed from the optical absorption coefficient for a fixed length of InP. A series of measurement concluded that optical absorption edge moves to longer wavelength region at a speed of 0.42 nm / $^{\circ}K$ as the specimen gets hotter, and that increasing the thickness of the InP sensing layer shifts power density curve to lower temperature region.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.12
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• pp.79-86
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• 2008

This paper presents the experimental results of impulse breakdown characteristics in $SF_6/N_2$ gas mixtures under a highly non-uniform electric field with a change in temperature. The test temperature ranges from -25[$^{\circ}C$] to 25[$^{\circ}C$]. The processes of impulse preliminary breakdown developments were analyzed by the measurements of current pulse and luminous signals. As a result, the temperature dependance of breakdown voltage for the negative polarity was much stronger than that for the positive polarity. When increasing the temperature, The leader stepping time for the negative polarity was shown to be longer than that for the positive polarity. The results presented in this paper can be used as a useful information in designing the gas insulation lines with prominent ability for lightning surge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.61-64
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• 2003

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. Mg(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $O_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.615-618
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• 2003

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(l00) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820 $^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785 $^{\circ}C$. Whereas, PO$_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$ was observed in all of the obtained films.lms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.486-487
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• 2007

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure in vacuum chamber was varied between $2{\times}10^{-6}{\sim}4{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation.