• 한국자기학회지
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• 제10권5호
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• pp.232-236
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• 2000

Cr을 하지층으로 사용한 CoSm 박막은 고기록밀도 수평 자기기록 매체로 가능성이 커 이에 대한 관심이 집중되고 있다. 본 연구에서는 dc 마그네트론 스퍼터링법으로 제작한 CoSm 박막의 자기적 성질의 Ar 가스 스퍼터링 압력 의존성을 조사하였다. 특히 고기록밀도 자기기록 매체에서 magnetic switching volume V＊은 자기기록 매체에 기록된 정보의 열적 안정성, 자화반전 및 잡음을 이해하는데 중요한 자료가 된다. 따라서 본 연구에서는 동일 조건에서 제작한 하지층 Cr위에 스퍼터링 압력을 달리하여 자성층 CoSm을 성장시켜 switching volume의 스퍼터링 압력 의존성을 규명하도록 하였다. 연구 결과 switching volume은 스퍼터링 압력이 증가할수록 감소하며, 그 크기는 9.0-5.2$\times$$10^{-18}$ $cm^3$ 범위 내에 있었다. Switching volume V＊를 이용하여 계산한 switching 단위의 크기는 22 nm 보다 작으며, 이 크기는 고기록 밀도수평 자기기록매체의 열적 안정성에 대한 Sharrock 조건을 만족한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 A
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• pp.537-539
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• 1996

In this paper, a design method of the phase shift ZVS-PWM converter is proposed to minimize the volume and increase the efficiency. The trade-offs of switching frequency, efficiency vs volume and ZVS range vs efficiency is also presented. The simulation of the designed converter is performed using the P-SPICE in which a phase-shift controller is proposed. For minimization of the converter volume, switching frequency is selected 100kHz, a simple drive circuit and single auxiliary supply are applied. In consideration of efficiency and load condition, ZVS range is decided from 50% to full load. A 28V, 1Kwatt prototype converter, of which the switch is MOSFET is made, verified the performance.

• 한국자기학회지
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• 제11권6호
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• pp.262-266
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• 2001

본 연구에서는 dc 마그네트론 스터링법으로 CoSm 박막을 제작하여 자기적 성질의 자성층 두께 의존성을 조사하였다. 고밀도 자기기록 매체의 여러 가지 성질 중 자기역전부피는 자기기록 매체에 저장된 정보의 열적 안정성, 자화반전기구 및 잡음을 이해하는 데 매우 중요한 자료가 된다. 따라서 자기화 감쇄의 시간 의존성과 직류 demagnetization remanence 곡선 측정결과로부터 각각 점성계수와 비가역 자화율을 구한 다음 최대 점성계수 및 비가역 자화율을 이용하여 최대 자기역전부피의 두께 의존성을 조사하였다. 자기역전부피와 보자력은 CoSm의 두께가 48 nm와 24 nm에서 각각 최대를 보이다가 오히려 감소하였으나 자기이방성은 계속 증가하는 경향을 보였다. 이와 같은 현상은 자성층의 두께가 증가함에 따라 결정립 또는 nanocrystallites 사이의 자기적 교환 상호작용이 증가하기 때문인 것으로 해석된다.

• 전력전자학회논문지
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• 제9권6호
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• pp.560-567
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• 2004

이 논문에서는 Planar transformer를 적용한 30W급 포워드 컨버터에 대한 설계와 실험결과를 소개한다. 컨버터의 전체적인 크기와 체적은 일반적인 권선형 변압기 대신 Planar transformer를 적용함으로써 감소하였고 크기와 체적의 감소로 포워드 컨버터의 전력밀도가 증가하였다. 또한, Single Switch 포워드 컨버터 와 Active Clamp ZVS 포워드 컨버터를 비교연구 하였다.

• 한국세라믹학회지
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• 제47권4호
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• pp.333-337
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• 2010

Domain structure and polarization switching in (001)-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$ (PMN-x%PT) crystals for x=20 and 35at% have been investigated in-situ by scanning force microscope (SFM) in a piezoresponse mode under a step DC electrical voltage. In the initial annealed condition, polar nano domains (PND) and domain striations oriented along {110} were observed in x=20 and x=35, respectively. For x=20, domain switching occurs by heterogeneous nucleation, where nucleation is not confined in the vicinity of domain boundaries, but rather can occur throughout the crystal volume. However, for x=35, domain switching tends to be preferentially initiated near pre-existing twin boundaries. With increasing the applying voltage, the nuclei density increased and assembled into {110} striations, indicating a stress-accommodated domain growth process. At higher voltage, nucleation occurs heterogeneously throughout the crystal volume.

• 전력전자학회논문지
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• 제27권3호
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• pp.247-255
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• 2022

This paper proposes a multiphase interleaved zero-voltage-transition boost converter with a single soft-switching cell for high-voltage DC-DC converter (HDC) of fuel cell systems. The proposed single soft-switching cell structure can reduce the system volume by minimizing the passive and active elements added even in the multiphase-interleaved structure. To analyze the feasibility of the proposed structure, this paper mathematically analyzes the operation modes of the converter with the proposed single soft-switching cell structure and presents guidelines for design and considerations. In addition, the feasibility of the 210[kW] HDC was confirmed through PSIM simulation, and the system volume reduction of up to 10.48% was confirmed as a result of the 5[kW] HDC test-bed experiment considering the fuel cell system. Through this, the validity of the proposed structure was verified.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2016년도 추계학술대회 논문집
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• pp.91-92
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• 2016

This paper is studied on optimal selection of heat sink for power electronics devices according to switching conditions. Through thermal analysis of MOSFET and repeated digital simulation, the loss characteristics during both switching and conduction intervals are compared to volume of the heat sinks. As a result, heat sink larger by 25% in volume could radiate more heat about $19^{\circ}C$.

• Journal of Power Electronics
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• 제10권3호
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• pp.235-244
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• 2010

This paper presents a new isolated soft-switching bidirectional buck-boost inverter for fuel cell applications. The buck-boost inverter combines an isolated DC-DC converter with a conventional inverter to implement buck-boost DC-DC and DC-AC conversion. The main switches achieve zero voltage switching and zero current switching by using a novel synchronous switching SVPWM and the volume of the transformer in the forward and fly-back mode is also minimized. This inverter is suitable for wide input voltage applications due to its high efficiency under all conditions. An active clamping circuit reduces the switch's spike voltage and regenerates the energy stored in the leakage inductance of the transformer; therefore, the overall efficiency is improved. This paper presents the operating principle, a theoretical analysis and design guidelines. Simulation and experimental results have validated the characteristics of the buck-boost inverter.

• Journal of Power Electronics
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• 제17권5호
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• pp.1127-1136
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• 2017

This paper proposes a new soft switching dual input converter for renewable energy systems. Multi-input converters are produced by combining discrete converters. These converters reduce the number of circuit elements, cost, volume and weight of the converter and provide a constant output power in different weather conditions. Furthermore, soft switching techniques can be applied to increase efficiency. In this paper, a Zero Voltage Transition (ZVT) dual input boost converter is presented. Only one auxiliary circuit is used to provide the soft switching condition for all of the semiconductor elements. The proposed converter, which is simulated by ORCAD software, is theoretically analyzed. To confirm the validity of the theoretical analysis, a prototype of proposed converter was constructed. Simulation and experimental results confirm the theoretical analysis. An efficiency comparison shows a one percent improvement at nominal loads.

• Journal of Electrical Engineering and Technology
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• 제10권3호
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• pp.1066-1074
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• 2015

This paper presents the reverse recovery characteristic according to the change of switching states when Si diode and SiC diode are used as clamp diode and proposes a method to minimize the switching loss containing the reverse recovery loss in the neutral-point-clamped inverter at low modulation index. The previous papers introduce many multiple circuits replacing Si diode with SiC diode to reduce the switching loss. In the neutral-point-clamped inverter, the switching loss can be also reduced by replacing device in the clamp diode. However, the switching loss in IGBT is large and the reduced switching loss cannot be still neglected. It is expected that the reverse recovery effect can be infrequent and the switching loss can be considerably reduced by the proposed method. Therefore, it is also possible to operate the inverter at the higher frequency with the better system efficiency and reduce the volume, weight and cost of filters and heatsink. The effectiveness of the proposed method is verified by numerical analysis and experiment results.