• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.232-236
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• 2000

CoSm thin films with a Cr underlayer have received continuous attention as a potential material for a high density longitudinal magnetic recording media. In this study the Ax gas sputtering pressure effects on the magnetic properties of CoSm thin films, which were fabricated by using a dc magnetron sputtering machine, were investigated. The magnetic switching volume is especially important parameter to understand the thermal stability of the written information, magnetization reversal process and media noise. Therefore, in this paper the effects of sputtering pressure on the magnetic switching volume of CoSm thin films grown on Cr underlayer with the same sputtering conditions was studied. As the Ar sputtering pressure during sputtering of the CoSm magnetic layer increases from 5 to 30 mTorr, the measured switching volumes decreased from 9.0 to 5.2$\times$10$^{-18}$ cm$^3$. The calculated diameter of switching unit from V＊ was less than 22 nm, which satisfies the Sharrock's requirement on the thermal stability of the high density longitudinal magnetic recording media.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.537-539
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• 1996

In this paper, a design method of the phase shift ZVS-PWM converter is proposed to minimize the volume and increase the efficiency. The trade-offs of switching frequency, efficiency vs volume and ZVS range vs efficiency is also presented. The simulation of the designed converter is performed using the P-SPICE in which a phase-shift controller is proposed. For minimization of the converter volume, switching frequency is selected 100kHz, a simple drive circuit and single auxiliary supply are applied. In consideration of efficiency and load condition, ZVS range is decided from 50% to full load. A 28V, 1Kwatt prototype converter, of which the switch is MOSFET is made, verified the performance.

• Journal of the Korean Magnetics Society
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• v.11 no.6
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• pp.262-266
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• 2001

The magnetic switching volume is known as an important parameter to understand the magnetization reversal process, thermal stability of the written information and media noise. This parameter is influenced significantly by the microstructure of the magnetic layer as well as underlayer. Therefore, we fabricated CoSm/Cr thin films with varying magnetic layer thickness under constant sputtering by using a dc magnetic sputtering machine. The magnetic layer thickness effect on the magnetic switching volume have been studied by the means of magnetic viscosity and dc demagnetization remanence curve mesurements. From these measurements, we found that the switching volumes increased with increasing the magnetic layer thickness, whereas the coercivity showed different behavior. These may be a result of the increased intergranular coupling and the larger volume fraction of the magnetic layer.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.6
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• pp.560-567
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• 2004

In this paper, the design and implementation of a high power(300W) forward converter using a planar transformer is presented. The overall size and volume of the converter is decreased by replacing a planar transformer in stead of using a conventional winding transformer. Due to the decreased size and volume, power density of the applied forward converter is increased. Also, in this paper, the 300W ZVS forward converter with active clamp snubber circuit is compared to the 300W hard switching forward converter planar transformer, the decreased size and volume, the 300W ZVS forward converter with active clamp snubber circuit, 30W hard switching forward converter.

• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.333-337
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• 2010

Domain structure and polarization switching in (001)-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$ (PMN-x%PT) crystals for x=20 and 35at% have been investigated in-situ by scanning force microscope (SFM) in a piezoresponse mode under a step DC electrical voltage. In the initial annealed condition, polar nano domains (PND) and domain striations oriented along {110} were observed in x=20 and x=35, respectively. For x=20, domain switching occurs by heterogeneous nucleation, where nucleation is not confined in the vicinity of domain boundaries, but rather can occur throughout the crystal volume. However, for x=35, domain switching tends to be preferentially initiated near pre-existing twin boundaries. With increasing the applying voltage, the nuclei density increased and assembled into {110} striations, indicating a stress-accommodated domain growth process. At higher voltage, nucleation occurs heterogeneously throughout the crystal volume.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.3
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• pp.247-255
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• 2022

This paper proposes a multiphase interleaved zero-voltage-transition boost converter with a single soft-switching cell for high-voltage DC-DC converter (HDC) of fuel cell systems. The proposed single soft-switching cell structure can reduce the system volume by minimizing the passive and active elements added even in the multiphase-interleaved structure. To analyze the feasibility of the proposed structure, this paper mathematically analyzes the operation modes of the converter with the proposed single soft-switching cell structure and presents guidelines for design and considerations. In addition, the feasibility of the 210[kW] HDC was confirmed through PSIM simulation, and the system volume reduction of up to 10.48% was confirmed as a result of the 5[kW] HDC test-bed experiment considering the fuel cell system. Through this, the validity of the proposed structure was verified.

• Proceedings of the KIPE Conference
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• 2016.11a
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• pp.91-92
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• 2016

This paper is studied on optimal selection of heat sink for power electronics devices according to switching conditions. Through thermal analysis of MOSFET and repeated digital simulation, the loss characteristics during both switching and conduction intervals are compared to volume of the heat sinks. As a result, heat sink larger by 25% in volume could radiate more heat about $19^{\circ}C$.

• Journal of Power Electronics
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• v.10 no.3
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• pp.235-244
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• 2010

This paper presents a new isolated soft-switching bidirectional buck-boost inverter for fuel cell applications. The buck-boost inverter combines an isolated DC-DC converter with a conventional inverter to implement buck-boost DC-DC and DC-AC conversion. The main switches achieve zero voltage switching and zero current switching by using a novel synchronous switching SVPWM and the volume of the transformer in the forward and fly-back mode is also minimized. This inverter is suitable for wide input voltage applications due to its high efficiency under all conditions. An active clamping circuit reduces the switch's spike voltage and regenerates the energy stored in the leakage inductance of the transformer; therefore, the overall efficiency is improved. This paper presents the operating principle, a theoretical analysis and design guidelines. Simulation and experimental results have validated the characteristics of the buck-boost inverter.

• Journal of Power Electronics
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• v.17 no.5
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• pp.1127-1136
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• 2017

This paper proposes a new soft switching dual input converter for renewable energy systems. Multi-input converters are produced by combining discrete converters. These converters reduce the number of circuit elements, cost, volume and weight of the converter and provide a constant output power in different weather conditions. Furthermore, soft switching techniques can be applied to increase efficiency. In this paper, a Zero Voltage Transition (ZVT) dual input boost converter is presented. Only one auxiliary circuit is used to provide the soft switching condition for all of the semiconductor elements. The proposed converter, which is simulated by ORCAD software, is theoretically analyzed. To confirm the validity of the theoretical analysis, a prototype of proposed converter was constructed. Simulation and experimental results confirm the theoretical analysis. An efficiency comparison shows a one percent improvement at nominal loads.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1066-1074
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• 2015

This paper presents the reverse recovery characteristic according to the change of switching states when Si diode and SiC diode are used as clamp diode and proposes a method to minimize the switching loss containing the reverse recovery loss in the neutral-point-clamped inverter at low modulation index. The previous papers introduce many multiple circuits replacing Si diode with SiC diode to reduce the switching loss. In the neutral-point-clamped inverter, the switching loss can be also reduced by replacing device in the clamp diode. However, the switching loss in IGBT is large and the reduced switching loss cannot be still neglected. It is expected that the reverse recovery effect can be infrequent and the switching loss can be considerably reduced by the proposed method. Therefore, it is also possible to operate the inverter at the higher frequency with the better system efficiency and reduce the volume, weight and cost of filters and heatsink. The effectiveness of the proposed method is verified by numerical analysis and experiment results.