• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.173-173
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• 2010

We proposed viewing angle switchable liquid crystal display(LCD) associated with fringe-field switching (FFS) mode with high aperture ratio characteristic. In the device, single pixel is separated into two regions, named as main pixel for displaying images and sub pixel for viewing angle control. In sub pixel region, add the common electrode on the top substrate and the initial alignment of liquid crystal is Hybrid Alignment Nematic (HAN) state. In conclusion, we suggested that the device has high aperture ratio characteristic because the LC directors are rotated in which viewing angle control region are generated fringe electric field.

• 대한기계학회논문집A
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• 제27권4호
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• pp.577-584
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• 2003

A crack with growth in ferroelectric ceramics under purely electric loading is analyzed. The crack tip stress intensity factor for the growing crack under small-scale conditions is evaluated by employing the model of nonlinear domain switching. The crack tip stress intensity factor increases or decreases with crack growth, depending on the electrical nonlinear behavior and the direction of an applied electric field. It is shown that the ferroelectric material can be either toughened or weakened as the crack grows. The steady state crack growth in ferroelectric ceramics is also discussed.

• Journal of Information Display
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• 제5권1호
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• pp.34-40
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• 2004

Time resolved infrared IR absorption spectroscopy is carried out to investigate the dynamics of electric field induced reorientation of the biphenyl molecular core and alkyl tail sub-fragments of the nematic liquid crystal 5CB (4-pentyl-4-cyano-biphenyl). The planar to homeotropic transition for high pre-tilt planar aligned cells, is studied for switching times ranging from 200 ${\mu}sec$ down to 80 ${\mu}sec$, the latter a factor of 1000 times faster than any previous nematic IR study. The reorientation rates of the core and tail are found to be the same to within experimental error and scale inversely with applied field squared, as expected for the balance of field and viscous torques. Thus any molecular conformation change during switching must relax on a shorter time scale. A simple model shows that no substantial differences exist between the reorientational dynamics of the tails and cores on the time scales longer than on the order of 10 ${\mu}s$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.560-563
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• 2007

The light efficiency of fringe-field switching (FFS) mode was found to be dependent on the magnitude of dielectric anisotropy, indicating that the voltagedependent maximal effective cell retardation value in the on state is a function of magnitude of the dielectric anisotropy of the LC.

• 한국의류산업학회지
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• 제10권6호
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• pp.900-906
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• 2008

This study investigated factors influencing consumers' switching behavior in apparel purchasing situation. As customer switching behavior is getting more and more important, a considerable amount of researches have focused on how service providers acquire and sustain customers. The field of customers' switching behavior has been relatively well researched over the years, at least from the perspective of the cultural value(Chemyen). The purpose of this study is to understand customer' switching behavior to relationship benefits and Chemyeon. The sample was consisted on 182 females over 20 years old living in Ulsan and Gyungnam province. The data was analyzed by frequency, reliability, factor analysis, and structural equation model analysis. Findings showed that Chemyeon was shown to reduce customer' switching behavior. Also, three factors of relationship benefits(economic benefit, social·psychological benefit, and special treatment benefit) had negative effects on customer' switching behavior.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.518-519
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• 2005

We have studied the transmittance of fringe-filed switching(FFS) using a liquid crystal with positive dielectric anisotropy. Generally, FFS having positive dielectric anisotropy has less transmittance than FFS using negative dielectric anisotropy. FFS mode transmittance depends on horizontal director deformation, however fringe filed is composed of vertical and horizontal field. Vertical field in the middle of electrode suppresses the transmittance of FFS mode, especially when we use positive one. So, it is important to prevent the LC director from the effect of vertical field. We changed the splay elastic constant and checked the transmittance. The transmittance of FFS having positive dielectric anisotropy was improved. Less tilted LC directors improve the transmittance of FFS using positive dielectric anisotropy. We can improve the transmittance by using LC which have high splay elastic constant when another LC properties are equal.

• 한국연소학회지
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• 제20권1호
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• pp.15-23
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• 2015

This paper presents the results of field demonstration for fuel switching to bio-fuel oil in 4 commercial heavy oil fired power plants. The 100% fuel switching field demonstration was successfully carried out in two tangential-firing boilers at a capacity of 75 and 100 MWe respectively without major equipment retrofit, and also 25% bio-fuel oil blending for two opposite firing boilers at a capacity of 350 and 400 MWe respectively. Despite the low density and heating value, the bio fuel was successfully replaced heavy fuel oil at the full load by only adjusting operational parameters. Incase of bio fuel oil combustion, heat absorption of radiative heat transfer section was reduced while convection section has opposite trend. In pollutants emission, a major reductionin SOx as well as 10-20% reduction in NOx were achieved by the fuels witching. On the other hand, boiler efficiency was slightly underestimated.

• 전자통신동향분석
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• 제36권3호
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• pp.34-40
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• 2021

For developing a switching device of a new concept that cannot be implemented with a semiconductor device, we introduce the Mott insulator-metal transition (IMT) phenomenon occurring out of the semiconductor regime, such as the temperature-driven IMT, the electric-field or voltage-driven IMT, the negative differential resistance (NDR)-IMT switching generated at constant current, and the NDR-based IMT-oscillation. Moreover, the possibilities of new concept IMT switching devices are briefly explained.

• 한국표면공학회지
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• 제53권6호
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• pp.330-342
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• 2020

Since the original report on ferroelectricity in Si-doped HfO2 in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility with the complementary-metal-oxide-semiconductor technology. Especially, the emerging fluorite-structured ferroelectrics are considered promising for the next-generation semiconductor devices such as storage class memories, memory-logic hybrid devices, and neuromorphic computing devices. For achieving the practical semiconductor devices, understanding polarization switching kinetics in fluorite-structured ferroelectrics is an urgent task. To understand the polarization switching kinetics and domain dynamics in this emerging ferroelectric materials, various classical models such as Kolmogorov-Avrami-Ishibashi model, nucleation limited switching model, inhomogeneous field mechanism model, and Du-Chen model have been applied to the fluorite-structured ferroelectrics. However, the polarization switching kinetics of fluorite-structured ferroelectrics are reported to be strongly affected by various nonideal factors such as nanoscale polymorphism, strong effect of defects such as oxygen vacancies and residual impurities, and polycrystallinity with a weak texture. Moreover, some important parameters for polarization switching kinetics and domain dynamics including activation field, domain wall velocity, and switching time distribution have been reported quantitatively different from conventional ferroelectrics such as perovskite-structured ferroelectrics. In this focused review, therefore, the polarization switching kinetics of fluorite-structured ferroelectrics are comprehensively reviewed based on the available literature.

• 한국세라믹학회지
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• 제39권1호
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• pp.92-98
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• 2002

Pb(Zr$_{0.8}$Ti$_{0.2}$)O$_3$강유전체 음극의 상부 전극 크기를 변화시키며(500$mu extrm{m}$~900$\mu\textrm{m}$)비대칭 전극 구조에서의 전자 방출에 대하여 연구하였다. 펄스 전기장을 가했을 때 나타나는 분극 반전에 의한 전류 밀도는 상부 전극 크기를 감소시킴에 따라 증가하였다. 이것은 비대팅 전극 구조에 의해 강유전체 표면에서 stray-field가 발생하고, stray field가 전극의 모서리 부근의 강유전체 표면 하부에도 분극 반전을 발생시켰기 때문이다. 전기장 전산모사를 통하여 이러한 stay-field의 존재 가능성을 예측할 수 있었고, 분극 반전에 의한 전류 밀도 측정 결과 stray-field가 미치는 거리는 약 11-l4$\mu\textrm{m}$이었다. 전자방출의 문턱전계는 항전계 의 약 3배인 61-68kV/cm이었으며, 문턱전계가 단순히 강유전체의 항전계에 의해 결정되는 것이 아니라, 강유전 음극의 구조에 의해 결정되는 stray-field의 세기와 stray-field가 미치는 거리에 영향을 받음을 전산모사를 통해 예측할 수 있었다.