• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.68-69
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• 2002

Magnetic tunnel junctions은 최근 자기저항용 재료나 MRAM용 소자로 사용하기 위한 연구가 활발하게 진행되고 있다. Magnetic tunnel junction을 저자계, 저전력용 소자로 사용되기 위해서는, 작은 switching field 값과 uniform한 switching field 분포를 가져야 한다. Micromagnetic simulation을 통하여 free layer의 두께와 포화 자화 값이 감소함에 따라서 switching field가 감소함을 알 수 있었다. 본 연구에서는 얇은 free layer를 사용하여 magnetic tunnel junction을 제조하고, 얇은 free layer가 자기저항에 미치는 영향에 대하여 알아보았다. (중략)

• Journal of Magnetics
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• v.14 no.1
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• pp.15-17
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• 2009

The magnetostatic interaction between the two magnetic nanowires was studied by using the longitudinal magneto-optical Kerr effect (MOKE). For this purpose two magnetic nanowires having different widths (400 nm, 800 nm) were fabricated on an Si substrate with electron beam lithography and the lift-off method. Magnetic hysteresis loops measured by MOKE showed double switching behavior, corresponding to the separated switching fields of each wire. The switching field of the narrow wire was greatly affected by the separation between the two wires. Based on how the switching field changes with decreasing separation, it is concluded that the magnetostatic field of the 800-nm wire strongly affects the switching of the 400-nm wire when the separation is less than $0.5{\mu}m$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.10
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• pp.907-913
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• 2015

This work presents a method to predict the near magnetic field distribution on the digital switching circuit mounted on PCB using co-simulation of circuit and electromagnetic fields. The proposed method first obtains the normalized near field distribution by exciting the signal and power ports of the switching circuit using sinusoidal sources. Then the real near magnetic field distribution is determined by weighting the normalized field distribution using the current spectrum of the switching circuit. To confirm the proposed method, a switching IC with a ring oscillator and a output buffer is fabricated and measured in the form of chip-on-board. The surface magnetic field distribution is measured using a magnetic probe above the PCB and compared with the simulation results. Experimental results show the correspondence between simulation and measurement results within 10 dB up to fifth harmonics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.633-640
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• 2004

We have studied color tracking of a fringe-field driven homogenously aligned nematic liquid crystal (LC) cell with negative dielectric anisotropy and compared it with other devices such as the twisted nematic(TN) and in-plane switching(IPS) modes. According to studies, the TN device shows bluish color at grey scale and even at a low retardation cell it cannot avoid color tracking. The authentic IPS device having cell retardation value of 0.23 ${\mu}{\textrm}{m}$ also shows bluish white color. However, the FFS device shows excellent color tracking characteristics even at high retardation value of the cell while keeping high transmittance and greenish white.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.388-389
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• 2007

A transflective liquid crystal displays driven by fringe field switching mode of new concept is being suggested. The FFS mode is known to have the different twist angle distribution at the position when an operating voltage is applied. We make the cell design by using the different twist angle which has some region decided on transmissive region and other region used to reflective region. By optimizing simulation condition in the concept, we proposed new tansflective LCDs using FFS mode with single gap and single gamma characteristics.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.77-81
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• 2020

Resistive RAM (ReRAM) is a strong candidate for the next-generation nonvolatile memories which use the resistive switching characteristic of transition metal oxides. The resistive switching behaviors originate from the redistribution of oxygen vacancies inside of the oxide film by applied programming voltage. Therefore, controlling the oxygen vacancy inside transition metal oxide film is most important to obtain and control the resistive switching characteristic. In this study, we introduced an applying electric field into photochemical metal-organic deposition (PMOD) process to control the oxidation state of metal oxide thin film during the photochemical reaction by UV exposure. As a result, the surface oxidation state of FeOx film could be successfully controlled by the electric field-assisted PMOD (EFAPMOD), and the controlled oxidation states were confirmed by x-ray photoelectron spectroscopy (XPS) I-V characteristic. And the resistive switching characteristics with the oxidation-state of the surface region could be controlled effectively by adjusting an electric field during EFAPMOD process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.820-823
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• 2002

The asymptotic problem of a semi-infinite conducting crack parallel to the poling direction in ferroelectric ceramics subjected to electric fields is analyzed. The main mechanism for the conducting crack growth behavior is thought to be ferroelectric domain switching leading to the development of a process zone around the crack. The shape and size of the switching zone is shown to depend strongly on the relative magnitude on the ratio of the coercive electric field to the yield electric field. It is shown that the crack growth can be either enhanced or retarded depending on the ratio of the coercive electric field to yield electric field.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.545-548
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• 2007

This Viewing angle control of fringe-field switching (FFS)-LCD using only one panel has been investigated. Viewing angle switching cell is composed of main- and sub-pixel, in which the former has a role of image expression and the latter has a role of viewing angle switching.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.6
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• pp.138-144
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• 2003

A crack in a ferroelectric ceramic subjected to an electric field is analyzed. The boundary of the electrical saturation zone is estimated based on the finite-width saturation zone model, which is analogous to a finite-width Dugdale zone model for mode III. It is shown that the shape and size of the switching zone depends strongly on the boundary of the electrical saturation zone and the ratio of the coercive electric field to the yield electric field. The crack tip stress intensity factor under small scale conditions is evaluated by employing the model of electric nonlinear domain switching. It is found that fracture toughness of the ferroelectric material may be increased or decreased depending on the material property of electrical nonlinearity.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1206-1210
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• 2003

Effect of transverse electric field on crack kinking in ferroelectric ceramics subjected to purely electric loading is investigated. It is shown that the shape and size of the domain switching zone depends strongly on the direction of the applied electric field as well as the ratio of the transverse electric field to the coercive electric field. Under small-scale conditions, mode I and II stress intensity factors induced by ferroelectric domain switching are numerically obtained. The crack kinking in ferroelectrics is also discussed.