• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.65-73
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• 2006

This work presents a 14b 200KS/s $0.87mm^2$ 1.2mW 0.18um CMOS algorithmic A/D converter (ADC) for intelligent sensors control systems, battery-powered system applications simultaneously requiring high resolution, low power, and small area. The proposed algorithmic ADC not using a conventional sample-and-hold amplifier employs efficient switched-bias power-reduction techniques in analog circuits, a clock selective sampling-capacitor switching in the multiplying D/A converter, and ultra low-power on-chip current and voltage references to optimize sampling rate, resolution, power consumption, and chip area. The prototype ADC implemented in a 0.18um 1P6M CMOS process shows a measured DNL and INL of maximum 0.98LSB and 15.72LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 54dB and 69dB, respectively, and a power consumption of 1.2mW at 200KS/s and 1.8V. The occupied active die area is $0.87mm^2$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.4
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• pp.913-920
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• 2011

In this paper, a logic process based 1-kbit EEPROM IP for RFID tag chips of 900MHz is designed. The cell array of the designed 1-kbit EEPROM IP is arranged in a form of four blocks of 16 rows x 16 columns, that is in a two-dimensional arrangement of one-word EEPROM phantom cells. We can reduce the IP size by making four memory blocks share CG (control gate) and TG (tunnel gate) driver circuits. We propose a TG switch circuit to supply respective TG bias voltages according to operational modes and to keep voltages between devices within 5.5V in terms of reliability in order to share the TG driver circuit. Also, we can reduce the power consumption in the read mode by using a partial activation method to activate just one of four memory blocks. Furthermore, we can reduce the access time by making BL (bit line) switching times faster in the read mode from reduced number of cells connected to each column. We design and compare two 1-kbit EEPROM IPs, two blocks of 32 rows ${\times}$ 16 columns and four blocks of 16 rows ${\times}$ 16 columns, which use Tower's $0.18{\mu}m$ CMOS process. The four-block IP is smaller by 11.9% in the layout size and by 51% in the power consumption in the read mode than the two-block counterpart.

• Journal of the Korean Society of Marine Environment & Safety
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• v.25 no.6
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• pp.802-808
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• 2019

DC motors are used extensively on shipboard, including as the ship's winch operating motor, owing to their simple speed control and excellent output torque characteristics. Moreover, they were used as propulsion motors in the early days of electric propulsion ships. However, mechanical rectifiers, such as brushes, used in DC motors have certain disadvantages. Hence, brushless DC (BLDC) motors are increasingly being used instead. While the electrical characteristics of both types of motors are similar, BLDC motors employ electronic rectifying devices, which use semiconductor elements, instead of mechanical rectifying devices. The inverter system for driving conventional BLDC motors uses a two-phase excitation method so that the waveform of the back electromotive force becomes trapezoidal. This causes harmonics and torque ripple in the phase current switching period in which the winding wire through which the current flows is changed. Researchers have studied and presented various methods to reduce the harmonics and torque ripple. This study applies a cascaded H-bridge multilevel inverter, which implements a proportional-integral speed current controller algorithm in the driving circuit of the BLDC motor for electric propulsion ships using a power analysis program. The simulation results of the modeled BLDC motor show that the driving method of the proposed BLDC motor improves the voltage waveform of the input side of the motor and remarkably reduces the harmonics and torque ripple compared with the conventional driving method.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.10A
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• pp.912-921
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• 2005

Optical burst switching(OBS) is a promising solution for building terabit optical routers and realizing If over WDM. Channel scheduling Algorithm for reduce contention is one of the major challenges in OBS. We address the issue of how to provide basic burst channel scheduling in optical burst switched WDM networks with fiber delay lines(FDLs). In OBS networks the control and payload components or a burst are sent separately with a time gap. If CHP arrives to burst switch node, because using scheduling algorithm for data burst, reservation resources such as wavelength and transmit data burst without O/E/O conversion, because contention and void between burst are happened at channel scheduling process for data burst that happened the link utilization and bust drop probability Existent proposed methods are become much research to solve these problems. Propose channel scheduling algorithm that use Release Time of bust to emphasize clearance between data and data dissipation that is happened in data assignment in this treatise and maximize bust drop probability and the resources use rate (RTUC : Release Time Unscheduled Channel). As simulation results, Confirmed that is more superior in terms of data drop and link utilization than scheduling algorithm that is proposed existing. As simulation results, confirmed improved performance than scheduling algorithm that is proposed existing in terms of survival of burst, efficiency resource and delay. However, In case load were less, degradation confirmed than existent scheduling algorithm relatively, and confirmed that is superior in data drop aspect in case of load increased.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.43 no.8
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• pp.757-764
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• 2015

Mathematical modeling of focal plane compensation device in the small earth-observation satellite camera has been conducted experimently for compensation of micro-vibration disturbance. The PZT actuators are used as control actuators for compensation device. It is quite difficult to build up mathematical model because of hysteresis characteristic of PZT actuators. Therefore, the compensation device system is assumed as a $2^{nd}$ order linear system and modeled by using MATLAB System Identification Toolbox. It has been found that four linear models of compensation device are needed to meet 10% error in the input frequency range of 0~50Hz. These models describe accurately the dynamics of compensation device in the 4 divided domains of the input frequency range of 0~50Hz, respectively. Micro-vibration disturbance can be compensated by feedback control strategy of switching four models appropriately according to the input frequency.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.9
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• pp.1079-1086
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• 2012

In this paper, X-band 60 W Solid-State Power Amplifier with sequential control circuit and pulse width variation circuit for improve bias of SSPA module was designed. The sequential control circuit operate in regular sequence drain bias switching of GaAs FET. The distortion and efficiency of output signals due to SSPA nonlinear degradation is increased by making operate in regular sequence the drain bias wider than that of RF input signals pulse width if only input signal using pulsed width variation. The GaAs FETs are used for the 60 W SSPA module which is consists of 3-stage modules, pre-amplifier stage, driver-amplifier stage and main-power amplifier stage. The main power amplifier stage is implemented with the power combiner, as a balanced amplifier structure, to obtain the power greater than 60 W. The designed SSPA modules has 50 dB gain, pulse period 1 msec, pulse width 100 us, 10 % duty cycle and 60 watts output power in the frequency range of 9.2~9.6 GHz and it can be applied to solid-state pulse compression radar using pulse SSPA.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.207-214
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• 2005

This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.

• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.212-217
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• 2002

The pseudo spin valve with a structure of Tl/CoFe(t $\AA$)/Cu(30 $\AA$)/NiFe(50 $\AA$)/Ta, showing giant magnetoresistance properties by utilizing coercivity difference between only two soft ferromagnetic layers were produced by d.c UHV magnetron sputtering system. In pseudo spin valve Ta/CoFe/Cu/NiFe/Ta, the magnetic and magnetoresistance properties with change of CoFe thickness were investigated. When the thickness of CoFe was 60 $\AA$, a typical MR curve of pseudo spin valve structure was obtained, showing MR ratio of 3.8 cio and the coercivity difference of 27.4 Oe with a sharp change of hard layer switching. When the CoFe thickness was varied from 20 to 100 $\AA$, coercivity difference between two layers was increased to 40 $\AA$. and decreased to 100 $\AA$ gradually. It is thought the change in coercivity of hard layer was due to the crystallinity and magnetostriction of thin CoFe layer. In order to improve the MR property in CoFe/Cu/NiFe trier layer structure, CoFe layer with change of 2-20 $\AA$ thick was inserted between Cu and NiFe. When the thickness of CoFe was 10 $\AA$, MR ratio was 6.7％, showing excellent MR property. This indicates 50 ％ higher than that of CoFe/Cu/NiFe pseudo spin valve.

• The Korean Journal of Rheology
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• v.11 no.2
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• pp.82-90
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• 1999

Electrorheological(ER) fluid is a material that shows the dramatic change of rheological properties under an electric field and responds reversibly in a few milliseconds. ER fluid's response to an electric field along with its fast switching capability allows ER devices to be precisely controlled. The real application with ER fluid, however, has many limitations to be overcome; temperature fluctuation, moisture, dust, aggregation, precipitation, and low yield stress, for example. The magnitude and the characteristics of yield stress of ER fluid plays an important role in practical applications. In this research, a dynamic simulation on the squeezing flow of the ER fluid was carried out. Numerical simulation on isolated chains was performed to find out the effect of hydrodynamic and electrostatic force depending on the chain location, the squeezing rate, and the chain structure. Suspension model that is composed of a large number of particles was also investigated. The increase of normal stresses as well as the existence of a yield stress at an earlier stage could be observed, and the effective control of the normal stresses could be achieved at an optimal condition of the hydrodynamic force and the electrostatic force.