• Journal of the Korean institute of surface engineering
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• v.43 no.6
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• pp.304-308
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• 2010

Deposition temperature uniformity of GaN based MQW (multiple quantum well) layers is an important key which affects the wavelength uniformity of white LEDs. Temperature uniformity was assessed by infrared images for both cases of a static and a rotating susceptor. Rotating the susceptor at 2.5 rpm over the induction heater gave 4.3% of temperature non-uniformity. Temperature distribution of the graphite susceptor over the induction heater was numerically modelled and agreed with experimental results.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.117-124
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• 1993

It was found that the basic principle of continuous crystal growth method was following as; the powder supplied from the feeding system is molten in the graphite crucible under the ambient gas. After forming the molten zone in the lower part of the crucible, the seed crystal is deeped into the melt and pulled down with the rotation so that the melt crystallized from the seed. When the lowering rate, rotation rate, feeding rate and temperature are correct, the single crystal can grow. The critical melt level, the feeding rate, the growth rate, the change of the shape of molten zone by the graphite susceptor and crucible, the position of work coil, the balance between the gravitational force of melt and the centrifugal force originated from the rotation of seed which are the variables of the crystal growth and the sintering phenomenon of melt surface were researched.

• Proceedings of the KSME Conference
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• 2001.06e
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• pp.213-218
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• 2001

The characteristics of the fluid flow and mass transfer in a vertical atmospheric pressure chemical vapor deposition (APCVD) are numerically studied. In order to get the optimal process parameters for the uniformity of deposition on a substrate, Navier-Stokes and energy equations have been solved for the pressure, mass-flow rate and temperature distribution in a CVD reactor. Results show that the thermal boundary condition at the reactor wall has an important effect in the formation of buoyancy-driven secondary cell when radiation effect is considered. Results also show that reduction of the buoyancy effect on the heated reactor improves the uniformity of deposition.

• Proceedings of the KSME Conference
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• 2000.11b
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• pp.359-364
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• 2000

The fluid flow, heat transfer and the local mass fi-action of chemical species in the chemical vapor deposition(CVD) manufacturing process are numerically studied. The deposition of silicon from dilute silane is hydrogen carrier gas in a horizontal CVD reactor is investigated. The effect of inlet carrier gas velocity, mass fraction of silane, susceptor angle on the deposition thickness and uniformity was represented.

• Proceedings of the KSME Conference
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• 2001.11b
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• pp.770-775
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• 2001

Numerical calculation has been performed to investigate the fluid flow, heat transfer and local mass fraction of chemical species in the MOCVD (metalorganic chemical vapor deposition) manufacturing process. The mixing of reactants (trimethylgallium with hydrogen gas and ammonia) was presented by the concentration of each reactants to predict the uniformity of film growth. Effects of inlet size, location, mass flow rate and susceptor/cold wall tilt angle on the concentration were reported. The newly developed reactor, that precursors were supplied at separated inlet to prevent from premixing, was investigated to obtain the quantitative verification. As a results, the optimum mass flow rate, wall tilt angle and inlet conditions were proposed.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.3
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• pp.410-416
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• 2002

The fluid flow, heat transfer and the local mass fraction of chemical species in the chemical vapor deposition(CVD) manufacturing process are studied numerically. Flow with a dilute precursor concentration of silane in hydrogen as the carrier gas enters to the reactor and deposits silicon onto the heated surface. The silicon deposition rate using silane is calculated in the horizontal or vertical, axisymmetric reactor. The effects of inlet carrier gas velocity, mass fraction of silane, susceptor angle and rotation of surface on the deposition rate are described.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.54-54
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• 2018

To optimize the deposition parameters of diamond films, the temperature, pressure, and distance between the filament and the susceptor need to be considered. However, it is difficult to precisely measure and predict the filament and susceptor temperature in relation to the applied power in the hot filament chemical vapor deposition (HFCVD) system. In this study the temperature distribution inside the system was numerically calculated for the applied powers of 12, 14, 16 and 18 kW. The applied power needed to achieve the appropriate temperature at a constant pressure and other conditions was deduced, and applied to actual experimental depositions. The numerical simulation was conducted using the commercial computational fluent dynamics software, ANSYS-FLUENT. To account for radiative heat-transfer in the HFCVD reactor, the discrete ordinate (DO) model was used. The temperatures of the filament surface and the susceptor at different power levels were predicted to be 2512 ~ 2802 K, and 1076 ~ 1198 K, respectively. Based on the numerical calculations, experiments were performed. The simulated temperatures for the filament surface were in good agreement with experimental temperatures measured using a 2-color pyrometer. The results showed that the highest deposition rate and the lowest deposition of non-diamond was obtained at a power of 16 kW.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.5
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• pp.500-504
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• 2023

In this study, the heteroepitaxial thin film growth of β-Ga₂O₃ was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga₂O₃ in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga₂O₃ thin films for various optical and electronic applications.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.521-522
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• 2008

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.116-121
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• 2000

The temperature profiles of gas phase and the concentration profiles of GaN precursors in an inverted OMVPE reactor have been carried out by in-situ Raman spectroscopy. Pure rotational Raman scattering from the carrier gas (rd) was used to determine the temperature profiles in the reactor, and a large temperature gradient perpendicular the susceptor surface was observed. The homogeneous gas phase decompositions of the OMVPE precursors were investigated by the vibrational Raman spectra, and it was found that the pyrolyses of $NH_3$ and TMGa begin above 800 K and 650 K, respectively, but a noticeable amount of precursors remain undecomposed even in the region very close to the susceptor.