Transactions of the Korean Society of Mechanical Engineers B (대한기계학회논문집B)

The Korean Society of Mechanical Engineers (대한기계학회)
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Numerical Analysis of Silicon Deposition in Horizontal & Vertical CVD Reactor

수평 및 수직형 CVD 증착로의 실리콘 부착에 관한 수치해석

  • 김인 (ATES(컨설팅 사업부)) ;
  • 백병준 (전북대학교 기계공학부, 자동차신기술연구소)
  • Published : 2002.03.01
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Abstract

The fluid flow, heat transfer and the local mass fraction of chemical species in the chemical vapor deposition(CVD) manufacturing process are studied numerically. Flow with a dilute precursor concentration of silane in hydrogen as the carrier gas enters to the reactor and deposits silicon onto the heated surface. The silicon deposition rate using silane is calculated in the horizontal or vertical, axisymmetric reactor. The effects of inlet carrier gas velocity, mass fraction of silane, susceptor angle and rotation of surface on the deposition rate are described.

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References

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