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http://dx.doi.org/10.3795/KSME-B.2002.26.3.410

Numerical Analysis of Silicon Deposition in Horizontal & Vertical CVD Reactor  

Kim, In (ATES(컨설팅 사업부))
Baek, Byung-Joon (전북대학교 기계공학부, 자동차신기술연구소)
Publication Information
Transactions of the Korean Society of Mechanical Engineers B / v.26, no.3, 2002 , pp. 410-416 More about this Journal
Abstract
The fluid flow, heat transfer and the local mass fraction of chemical species in the chemical vapor deposition(CVD) manufacturing process are studied numerically. Flow with a dilute precursor concentration of silane in hydrogen as the carrier gas enters to the reactor and deposits silicon onto the heated surface. The silicon deposition rate using silane is calculated in the horizontal or vertical, axisymmetric reactor. The effects of inlet carrier gas velocity, mass fraction of silane, susceptor angle and rotation of surface on the deposition rate are described.
Keywords
CVD; Deposition Rate; Chemical Species; Mass Fraction; Susceptor; Diffusion Coefficient;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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