• Fashion & Textile Research Journal
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• v.17 no.6
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• pp.1020-1029
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• 2015

This paper investigated the wearing performance of knitted fabrics made of air vortex yarns using PTT/tencel/cotton fibres in comparison with ring and compact yarns for emotional garment. Wicking property of knitted fabric made of MVS yarns was worse than those by ring and compact yarns, however, drying property of knitted fabric made of MVS yarns was better than those by ring and compact yarns, which was explained as more water vapor transport due to larger openness between fibres in the MVS yarns than those in the ring and compact yarns. Thermal conductivity of knitted fabric made of MVS was lower than those of ring and compact yarns and maximum heat flow(Q_max) at the transient state of MVS knitted fabric was lower than those of ring and compact yarns, which may be attributed to MVS yarn structure that has parallel fibres in the core part of the yarn and fasciated fibre bundles on the sheath part with roughness on the yarn surface. However, pilling of MVS knitted fabric was better than those by ring and compact yarns, which was caused by less and shorter hairy fibres protruded from MVS yarn surface than those of ring and compact yarns. It was observed that tactile hand of MVS yarn knitted fabrics was stiffer than those of ring and compact yarns knitted fabrics. It was explained by low extensibility and compressibility and high bending and shear rigidities of the MVS yarn knitted fabrics, which resulted in bad wearing performance of MVS knitted fabric.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.495-501
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• 2020

The various sintered samples comprising of 72 wt% (Al₂O₃) : 28 wt% (SiO₂) based ceramics were fabricated using a colloidal processing route. The phase analysis of the ceramics was performed using an X-ray diffractometer (XRD) at room temperature confirming the presence of Al₂O₅Si and Al_5.33Si_0.67O_9.33. The surface morphology of the fracture surface of the different sintered samples having different sizes of grain distribution. The resistive and capacitive properties of the three different sintered samples at frequency sweep (1 kHz to 1 MHz). The contribution of grain and the non-Debye relaxation process is seen for various sintered samples in the Nyquist plot. The ferroelectric loop of the various sintered sample shows a slim shape giving rise to low remnant polarization. The excitation performance of the sample at a constant electric signal has been examined utilizing a designed electrical circuit. The above result suggests that the prepared lead-free ceramic can act as a base for designing of dielectric capacitors or resonators.

• Textile Coloration and Finishing
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• v.8 no.3
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• pp.52-58
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• 1996

In order to study an applicable level for the graft finish of silk filaments and the characteristics of silk fabric, some sample fabrics were woven with grafted weft and the characteristics of sample fabrics were analyzed to evaluate the mechanical properites and the handle values according to the graft yield(%) of MMA and HEMA monomers on silk filaments. 1. The tensile properties were detected in the increase of linearity(LT) and the recovery in time of the increasing resilience(RT). 2. The bending properties were detected to have a lot of effect on the balance of bending rigidity(B) to hysteresis(2HB) according to the elastic relaxation of warp tension and the interlacing stress. 3. The shearing properities were detected to show the softness and the elastics in a case of the decrease in shearing rigidity(G) and hysteresis(2HG, 2HG5) according to the graft yields. 4. The compression properties were detected in the decrease of linearity(LC) and the uniformity of resilience(RC). It explains that the tendancies of compressible variation is not accepted. 5. The surface properities were detected to be affected by the surface forms of grafted silk filaments and the variation in the morphologies of interlacing sections. Considering the interlacing eveness, MMA grafted fabrics were accepted within the level of WOMEN'S THIN DRESS(KN-201-LDY) but HEMA grafted fabrics were not accepted. 6. The variation of handles were detected in the increase of total hand(TAV) within the levels of 65% of KOSHI and 82% of HARI on the average. 7. The handle fashions were detected in the nature of Habuta and Dechine from MAA graft but the nature of Fugi were shaped from HEMA graft in proportion to the graft yields.

• Journal of Surface Science and Engineering
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• v.56 no.2
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• pp.160-168
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• 2023

Recently, investigation on metallization is a key for a stretchable display. Amorphous metal such as Ni and Zr based amorphous metal compounds are introduced for a suitable material with superelastic property under certain stress condition. However, Ni and Zr based amorphous metals have too high resistivity for a display device's interconnectors. In addition, these metals are not suitable for display process chemicals. Therefore, we choose an aluminum based amprhous metal Al-Mo as a interconnector of stretchable display. In this paper, Amorphous Forming Composition Range (AFCR) for Al-Mo alloys are calculated by Midema's model, which is between 0.1 and 0.25 molybdenum, as confirmed by X-ray diffraction (XRD). The elongation tests revealed that amorphous Al-20Mo alloy thin films exhibit superior stretchability compared to pure Al thin films, with significantly less increase in resistivity at a 10% strain. This excellent resistance to hillock formation in the Al20Mo alloy is attributed to the recessed diffusion of aluminum atoms in the amorphous phase, rather than in the crystalline phase, as well as stress distribution and relaxation in the aluminum alloy. Furthermore, according to the AES depth profile analysis, the amorphous Al-Mo alloys are completely compatible with existing etching processes. The alloys exhibit fast etch rates, with a reasonable oxide layer thickness of 10 nm, and there is no diffusion of oxides in the matrix. This compatibility with existing etching processes is an important advantage for the industrial production of stretchable displays.

• Proceedings of the Korean Geotechical Society Conference
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• 2010.03a
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• pp.208-212
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• 2010

The high-speed railway consists of tracks, gravel ballast and subgrade, and the dynamic load is passed to subgrade through track and gravel ballast. The relaxation condition of the gravel ballast is able to be evaluate relatively and to be repaired through a continuous management, but it is difficult to evaluate the condition of subgrade, which is final part of supporting dynamic load and to repair it when made a problem. The gravel ballast and subgrade are evaluated by determining shear wave velocity. To evaluate ballast and subgrade, a good method to determine shear wave velocity is a non-destructive experiment such as surface wave tests providing a prompt experiment because an experiment in railway has a lot of tests which are carried out following railway directions and needs to prevent damage of the system. In general, a railway has limitation of an experimental space by narrow width, sleeper and etc., and background noise by a reflector exists. The existing surface wave tests need a minimum space, and it is difficult to get a reliable test results on account of background noise effect. Therefore, it is difficult or impossible to apply to existing surface wave test of subgrade and ballast. In this study, the HWAW method is applied to determine a shear wave velocity profile of the underground. The HWAW method is the experiment which is able to be carried out on a narrow space, and it determines share wave velocity of a site by measuring the wave from surface sources on the same spot. In addition, it removes effects of background noise accordingly to a signal processing using harmonic wavelet transforms, so it is useful to evaluate subgrade of a high-speed railway in the narrow space and the situation of background noise. In order to check an application of the HWAW method, an experiment is carried out on a high-speed railway field and a test result is compared to boring results.

• Advances in nano research
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• v.12 no.6
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• pp.605-616
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• 2022

We prepared two samples of ultrafine ferrihydrite (FH) nanoparticle ensembles of quite a different origin. First is the biosynthesized sample (as a product of the vital activity of bacteria Klebsiella oxytoca (hereinafter marked as FH-bact) with a natural organic coating and negligible magnetic interparticle interactions. And the second one is the chemically synthesized ferrihydrite (hereinafter FH-chem) without any coating and high level of the interparticle interactions. The interparticle magnetic interactions have been tuned by modifying the nanoparticle surface in both samples. The coating of the FH-bact sample has been partially removed by annealing at 150℃ for 24 h (hereinafter FH-annealed). The FH-chem sample, vice versa, has been coated (1.0 g) with biocompatible polysaccharide (arabinogalactan) in an ultrasonic bath for 10 min (hereinafter FH-coated). The changes in the surface properties of nanoparticles have been controlled by XPS. According to the electron microscopy data, the modification of the nanoparticle surface does not drastically change the particle shape and size. A change in the average nanoparticle size in sample FH-annealed to 3.3 nm relative to the value in the other samples (2.6 nm) has only been observed. The estimated particle coating thickness is about 0.2-0.3 nm for samples FH-bact and FH-coated and 0.1 nm for sample FH-annealed. Mössbauer and magnetization measurements are definitely shown that the drastic change in the blocking temperature is caused by the interparticle interactions. The experimental temperature dependences of the hyperfine field hf>(T) for samples FH-bact and FH-coated have not revealed the effect of interparticle interactions. Otherwise, the interparticle interaction energy E_int estimated from the hf>(T) for samples FH-chem and FH-annealed has been found to be 121k_B and 259k_B, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Korean Journal of Heritage: History & Science
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• v.34
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• pp.222-267
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• 2001

The purpose of this document is to explain the revisions of the Protection of Cultural Properties Act and its sub-laws which have been mad from Jan. 1999 to Sep. 2001. The Protection of Cultural Properties Act and its sub-laws have been revised three times from 1999 to 2001, before and after the Office of Cultural Properties was raised to Cultural Properties Administration on May 24, 1999. The main points of the revisions are as follows. First of all, the role of the local autonomous entities has been increased. The governor of the local autonomous entities is entitled to announce administrative orders related to the preservation of State-designated Cultural Properties. Also, the local autonomous entities has the authorities to examine whether the construction work which will be made in the outer boundaries, which is provided by regulations, of the protected area of the cultural properties might have any effect on preservation of cultural properties or not. Second, preventive actions to protect the cultural properties have been strengthened. If the scale of construction work is more than some scale, the preliminary survey of the surface of the earth to confirm the existence of buried cultural properties and their distribution is obligated. One who is promoting the development plan more than some scale must discuss the plan with the Administrator of Cultural Properties Administration in the process of planning. These actions would be effective to prevent the cultural properties from being damaged because of the development. Third, relaxation of the restrictions has been proceeded. On the basis of regulations which specify the actions to affect the preservation of cultural properties, negative system that does not limit the actions which are not specified in the regulations is introduced. The appropriateness of both protected structure and area should be regularly reviewed and adjusted. Also, most of the restrictions which was made only for administrative convenience and over-regulated the people's living have been revised. Finally, the number of cultural properties to be protected has been increased. Besides the State-designated Cultural Properties, the other cultural properties which are worthy to be protected as City-or-Province-designated Cultural Properties can be designated provisionally and protected. The system of registration and maintenance of the buildings and facilities which are not designated as the Modern Cultural Heritages is established. The penalty for damaging and stealing the cultural Properties which are not designated to be protected was strengthened. Even a dead natural monument can be acknowledged as an natural monument and it is limited to make a specimen or stuffing of the dead natural monument. All of these actions are fit to the high level of understanding of the public about the cultural properties and as the result of these actions, the number of cultural properties to be preserved has been increased. To sum up, the directions of revisions of the Protection of Cultural Properties Act and its sub­laws which have been made from Jan. 1999 to Sep. 2001. are the localization of the protection of the cultural properties, the strengthening of protective actions, the relaxation of various regulations and the increasing of the number fo the protected cultural properties. Also, various problems raised in the processes of implementations of the laws have been reviewed and revised.

• Journal of Acupuncture Research
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• v.33 no.4
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• pp.93-100
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• 2016

Objectives : To find an acupuncture point where more exact Surface Electromyography(SEMG) measurement can be drown, through the study of measurement of orbicularis oris. Methods : Of healthy people from 19 to 40 years of age, who did not fall under exclusion criteria (22 males and 22 females), were selected as subjects, after relaxation for 10 minutes, and they were told how to pronounce 'O' and 'U' with their lips puckered. The SEMG figures were measured with attaching disposable electrode on acupuncture point of right-and-left Hwaryo(LI19) and 1 cun away from Seungjang(CV24) on both sides when the subjects pronounced 'O' and 'U'. Results : The average value was highest on left 1 cun away from Seungjang(CV24) in pronouncing 'O' and 'U', and the average SEMG value was higher in the order of right 1 cun away from Seungjang(CV24), right Hwaryo(LI19), left Hwaryo(LI19). Average of the lower orbicularis oris is statistically higher than that of the upper orbicularis oris, which has significant meaning. However, there was no significant difference when compared by pronunciation. Average of percentage mark of differences of right-and-left measured value of each pronunciation and each acupuncture point : Pronounced 'O' and the upper part of orbicularis oris: $16.76{\pm}11.29%$, pronounced 'O' and the lower part of orbicularis oris: $22.41{\pm}12.92%$, pronounced 'U' and the upper part of orbicularis oris: $17.10{\pm}9.89%$, pronounced 'U' and the lower part of orbicularis oris : $19.20{\pm}10.82%$. Conclusion : The difference of pronunciation will not affect the results in SEMG measurement. In addition, the average of the lower orbicularis oris is statistically and significantly higher than that of the upper orbicularis oris.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.69-75
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• 2016

This study investigated the effect of heat treatment conditions not only on the Cr surface crack propagation behaviors but also on the Ni/Cr interfacial reaction characteristics in electroless Ni/electroplated Cr double coating layers on Cu substrate. Clear band layer of Ni-Cr solid solutions were developed at Ni/Cr interface after heat treatment at $750^{\circ}C$ for 6 h. Channeling cracks formed in Cr layer after 1 step heat treatment, that is, heat treatment after Ni/Cr plating, while little channeling cracks formed after 2 step heat treatment, that is, same heat treatments after Ni and Cr plating, respectively, due to residual stress relaxation due to crystallization of Ni layer before Cr plating.