• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.384-384
• /
• 2010

Zirconium oxynitride films were obtained by r.f. reactive magnetron sputtering of a zirconium target with nitrogen flow rate ranging from 0 to 60 sccm. The phases present in the films were determined by X-ray diffraction (XRD). Measurements of the oxidation state $ZrON_x$ films were investigated by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Thickness of these samples was estimated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). We found that the surface morphology of $ZrON_x$ films measured by atomic force microscopy (AFM) was also depended on the nitrogen gas flow.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.94-94
• /
• 2013

The Cr-Zr-N films have much improved mechanical properties and very smooth surface roughness. However, in spite of their outstanding properties, the Cr-Zr-N coatings revealed their mechanical properties deteriorated severely with increasing Zr content at $500^{\circ}C$ ecause of very rapid oxidation. Recently oxynitride films have been widely studied due to their excellent unique mechanical properties and oxidation resistance. In this work, CrZr-O-N films with various O contents were synthesized by unbalanced magnetron sputtering with Cr-Zr segment targets (Cr:Zr volume ratios is 1：1) and all films were prepared in a nitrogen rich mixture of N2 and O2. Characteristics such as crystalline structure, hardness and chemical composition as a function of the O content were investigated by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), microhardness testing system and energy dispersive spectroscopy (EDS). Results showed that the thin films had dense and compact microstructure as O content in the films increases. The microstructure of the thin films consisted of mainly crystalline Cr (Zr)N phase and Cr2O3 phase. The maximum hardness and elastic modulus of the films was measured to be approximately 33.2 GPa and 280.6 GPa from the films with low content of O elements. Detailed experimental results will be presented.

• Korean Chemical Engineering Research
• /
• 제60권4호
• /
• pp.620-629
• /
• 2022

가열 속도, 몰 공간속도, 질화반응온도 등 다양한 실험 조건을 변화하며 바나디움 산화물과 암모니아와의 승온 질화반응을 통하여 바나디움 산화질화물을 제조하여 특성분석을 수행하였으며 제조된 바나디움 산화질화물 상에서 암모니아 분해반응의 촉매 활성을 검토하였다. 제조된 촉매의 물리·화학적 특성을 알아보기 위하여 N₂ 흡착분석, X-선 회절분석(XRD), 수소 승온환원(H₂-TPR), 산소 존재 하 승온산화 (TPO), 암모니아 탈착 (NH₃-TPD), 투과전자현미경(TEM) 분석을 수행하였다. 340 ℃에서 5 m² g^-1의 낮은 비표면적을 갖는 V₂O₅의 환원에 의하여 V₂O₃ 으로의 변환은 미세 기공 형성에 의해 115 m² g^-1 높은 비표면적 값을 보여주었으며 그 이상의 질화반응 온도가 증가함에 따라 소결현상에 의해 지속적인 비표면적의 감소를 초래하였다. 비표면적에 가장 큰 영향을 미치는 질화반응 변수는 반응온도였으며, 단일 상의 VN_xO_y의 x + y 값은 질화반응온도가 증가함에 따라 1.5에서 1.0으로 근접하였으며 680 ℃의 높은 반응온도에서 입방 격자상수 a는 VN 값에 근접하였다. 본 실험 조건 중에 질화반응온도가 가장 높았던 680 ℃에서 암모니아 전환율은 93%로 나타났으며 비활성화는 관찰되지 않았다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2009년도 추계학술발표대회
• /
• pp.44.2-44.2
• /
• 2009

Polycrystalline materials suchas yttria and alumina have been applied as a plasma resisting material for the plasma processing chamber. However, polycrystal line material may easily generate particles and the particles are sources of contamination during the plasma enhanced process. Amorphous material can be suitable to prevent particle generation due to absence of grain-boundaries. We manufactured nitrogen-containing $SiO_2-Al_2O_3-Y_2O_3$ based glasses with various contents of silicon and fixed nitrogen content. The thermal properties, mechanical properties and plasma etching rate were evaluated and compared for the different composition samples. The plasma etching behavior was estimated using XPS with depth profiling. From the result, the plasma etching rate highly depends on the silicon content and it may results from very low volatile temperature of SiF4 generated during plasma etching. The silicon concentration at the plasma etched surface was very low besides the concentration of yttrium and aluminum was relatively high than that of silicon due to high volatile temperature of fluorine compounds which consisted with aluminum and yttrium. Therefore, we conclude that the samples having low silicon content should be considered to obtain low plasma etching rate for the plasma resisting material.

• 한국재료학회지
• /
• 제3권4호
• /
• pp.381-387
• /
• 1993

${Si_3}{N_4}$와 BN의 선택적 산화반응과 질소분위기 소결에 의하여 $Si_2N_2O$로 결합된$Si_3N_4-BN$복합재료를 개발하였으며, 이때 산화반응 온도와 CaO의 첨가가 $Si_2N_2O$의 생성에 미치는 영향을 고찰하였다. $Si_2N_2O$상이 도입된 $Si_3N_4-BN$복합재료는 내열충격성 및 용강에 대한 내침식성이 우수하여 연속제강새안의 부품인 break ring등의 소재로 사용될 수 있다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.675-678
• /
• 2007

In organic light emitting diodes (OLEDs), the electrons and holes need to be injected efficiently to obtain the best device performance. This means that a small injection barrier height at the ITO/organic interface is required. In this study, the surface of the ITO anode was treated with an Aluminum oxynitride (AlON).

• 한국진공학회지
• /
• 제14권2호
• /
• pp.97-102
• /
• 2005

제일원리 분자동역학 방법을 이용하여 Si(001) 표면에 NO 분자 흡착을 연구하였다. NO 분자가 Si(001)의 dimer축과 나란히 흡착될 경우에 50K에서도 분해가 일어났다. 이를 에너지 장벽으로 환산해 보면 0.006eV로서 거의 무시해도 좋을 정도이다 만일 NO 분자가 표면에 수직으로 들어오면 이웃에 있는 dimer에 걸쳐서 분해가 일어났다. 이 경우는 에너지 장벽은 0.08eV 정도였으며 여전히 낮은 수준이다. 분해가 된 산소분자는 dimer와 기판 사이의 backbend로 파고들어서 (에너지 장벽 0.007eV) 안정된 구조를 만들었다. 또 dimer에 나란히 흡착된 분자 상태의 경우는 N=Si_3$를 만들기도 하는데 속전자준위분광학(core level spectroscopy) 실험 결과와 일치한다.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2001년도 춘계학술발표회 초록집
• /
• pp.73-73
• /
• 2001

Boron-containing materials have several excellent properties, such as superlnardness, insulation and non-Rinear optical property. Recently, oxynitride compounds, such as Si(ON), Ti(ON), became the promising materials applied in diffusion barrier layer and solar cell. With the expectation of obtaining the hybrid property, we have firstly grown the BON thin film by radio frequency (R.F.) plasma enhanced metalorganic chemical vapm deposition (PEMOCVD) with 100 kHz frequency and trimethyl borate precursor. The plasma source gases used in this study were Ar and $H_2$, and two kinds of nhmgen source gases, $N_2$ and <$NH_3$, were also employed. The as-grown films were characterized by XPS, IR, SEM and Knoop microlhardness tester. The relationship between the films hardness and the growth rate indicated that the hardness of the film was dependent on several factors such as nitrogen source gas, substrate temperature and film thickness due to the variation of the composition and the structure of the film. Both nitrogen and carbon content could raise the film hardness, on which nitrogen content did stronger effect than carbon. The smooth morphology and continuous structure was benefit of obtaining high hardness. The maximum hardness of BON film was about 10 GPa.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
• /
• pp.785-787
• /
• 1988

The capacitance-voltage (C-V) chracteristics of thin nitrided thermal oxides prepared by rapid termal nitridation(RTN) have been studied. The threshold voltages were calculated using C-V measurement and found to vary as the concentration of acceptor and the thickness of oxynitride. When the Si02 films were annealed in NH3 a decrease in the positive oxide charge due to Si-N bond was observed. In the case applied frequency is high and low, the high frequency depletion capacitance was higher than that of low frequency, which is indicative of high frequency surface conduction by mobile surface charge.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2013년도 춘계학술대회 논문집
• /
• pp.176-176
• /
• 2013

CrZrN 3원계 박막은 상온에서 매우 우수한 기계적 특성을 나타내지만, $500^{\circ}C$ 이상의 고온에서는 Zr의 산화로 인하여 기계적 특성이 저하되게 된다. 따라서 본 연구에서는 CrZrN 박막의 고온 특성을 개선하기 위해서 내산화성이 향상에 영향을 미치는 표면 산화물을 만들기 위해 산소 원소를 첨가하여 CrZrON 4원계 oxynitride 박막을 segment target을 이용해 합성하였고, 박막의 미세구조를 분석하였다.