• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.384-384
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• 2010

Zirconium oxynitride films were obtained by r.f. reactive magnetron sputtering of a zirconium target with nitrogen flow rate ranging from 0 to 60 sccm. The phases present in the films were determined by X-ray diffraction (XRD). Measurements of the oxidation state $ZrON_x$ films were investigated by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Thickness of these samples was estimated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). We found that the surface morphology of $ZrON_x$ films measured by atomic force microscopy (AFM) was also depended on the nitrogen gas flow.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.94-94
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• 2013

The Cr-Zr-N films have much improved mechanical properties and very smooth surface roughness. However, in spite of their outstanding properties, the Cr-Zr-N coatings revealed their mechanical properties deteriorated severely with increasing Zr content at $500^{\circ}C$ ecause of very rapid oxidation. Recently oxynitride films have been widely studied due to their excellent unique mechanical properties and oxidation resistance. In this work, CrZr-O-N films with various O contents were synthesized by unbalanced magnetron sputtering with Cr-Zr segment targets (Cr:Zr volume ratios is 1：1) and all films were prepared in a nitrogen rich mixture of N2 and O2. Characteristics such as crystalline structure, hardness and chemical composition as a function of the O content were investigated by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), microhardness testing system and energy dispersive spectroscopy (EDS). Results showed that the thin films had dense and compact microstructure as O content in the films increases. The microstructure of the thin films consisted of mainly crystalline Cr (Zr)N phase and Cr2O3 phase. The maximum hardness and elastic modulus of the films was measured to be approximately 33.2 GPa and 280.6 GPa from the films with low content of O elements. Detailed experimental results will be presented.

• Korean Chemical Engineering Research
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• v.60 no.4
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• pp.620-629
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• 2022

By varying various experimental conditions such as heating rate, molar hourly space velocity (MHSV), and nitridation reaction temperature, vanadium oxynitride was prepared through temperature programmed reduction/nitridation reaction (TPRN) of vanadium pentoxide and ammonia, and characterization were performed. In order to investigate the physico-chemical properties of the prepared catalyst, N₂ adsorption-desorption analysis, X-ray diffraction analysis (XRD), hydrogen temperature programmed reduction (H₂-TPR), temperature programmed oxidation (TPO), ammonia temperature programmed desorption (NH₃-TPD), transmission electron microscopy (TEM) was performed. Transformation of V₂O₅ with 5 m² g^-1 low specific surface area by reduction at 340 ℃ to V₂O₃ showed a high specific surface area value of 115 m² g^-1 by micropore formation. As the nitridation temperature increased beyond that, the specific surface area continued to decrease due to sintering. The nitridation reaction variable that had the greatest influence on the specific surface area was the reaction temperature, and the x + y value of VN_xO_y of a single phase approached from 1.5 to 1.0 as the nitridation reaction temperature increased. At a high reaction temperature of 680 ℃, the cubic lattice constant a was VN. close to the value. At 680 ℃, the highest nitridation temperature among the experimental conditions, the ammonia conversion rate was 93%, and no deactivation was observed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.44.2-44.2
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• 2009

Polycrystalline materials suchas yttria and alumina have been applied as a plasma resisting material for the plasma processing chamber. However, polycrystal line material may easily generate particles and the particles are sources of contamination during the plasma enhanced process. Amorphous material can be suitable to prevent particle generation due to absence of grain-boundaries. We manufactured nitrogen-containing $SiO_2-Al_2O_3-Y_2O_3$ based glasses with various contents of silicon and fixed nitrogen content. The thermal properties, mechanical properties and plasma etching rate were evaluated and compared for the different composition samples. The plasma etching behavior was estimated using XPS with depth profiling. From the result, the plasma etching rate highly depends on the silicon content and it may results from very low volatile temperature of SiF4 generated during plasma etching. The silicon concentration at the plasma etched surface was very low besides the concentration of yttrium and aluminum was relatively high than that of silicon due to high volatile temperature of fluorine compounds which consisted with aluminum and yttrium. Therefore, we conclude that the samples having low silicon content should be considered to obtain low plasma etching rate for the plasma resisting material.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.381-387
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• 1993

The silicon oxynitride bonded $Si_3N_4-BN$ composite has been developed based on the selective oxidation behavier of $Si_3N_4$ over BN. The silicon oxynitride phase converted to the reaction between $Si_3N_4$ and $SiO_2$ formed on $Si_3N_4$ powder surface during oxidation treatment at the sintering temperature. The developed composite has excellent high-temperature strength, thermal shock resistance, precision machinability and corrosion resistance to the molten steel. The developed composite may therefore be used as, for example, break ring materials in continuous casting of steel.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.675-678
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• 2007

In organic light emitting diodes (OLEDs), the electrons and holes need to be injected efficiently to obtain the best device performance. This means that a small injection barrier height at the ITO/organic interface is required. In this study, the surface of the ITO anode was treated with an Aluminum oxynitride (AlON).

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.97-102
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• 2005

NO adsorption can be used in synthesizing oxynitride thin films which have potential application in nanodevices. However, it is very difficult to understand the oxynitridation Process since too many factors are involved in it. In this paper, we present our first-principles molecular dynamics calculation of the NO molecule adsorption on the Si(001) surface as the initial stage of the oxynitridation process. The previous first-principles calculation has argued the NO molecule is dissociated with a very small activation barrier, 0.07eV, which acutally corresponds to 1.60eV considering thermodynamics. This is in clear contrast to the observation that NO is dissociated at temperatures as low as 20K From extensive searches of NO on the Si(001) surface, we have found the new dissociation processes that have the much lower activation energies, less than 0.01 eV. We also present the dissociation and penetration processes with the corresponding activation energies and discuss their experimental implications.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.73-73
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• 2001

Boron-containing materials have several excellent properties, such as superlnardness, insulation and non-Rinear optical property. Recently, oxynitride compounds, such as Si(ON), Ti(ON), became the promising materials applied in diffusion barrier layer and solar cell. With the expectation of obtaining the hybrid property, we have firstly grown the BON thin film by radio frequency (R.F.) plasma enhanced metalorganic chemical vapm deposition (PEMOCVD) with 100 kHz frequency and trimethyl borate precursor. The plasma source gases used in this study were Ar and $H_2$, and two kinds of nhmgen source gases, $N_2$ and <$NH_3$, were also employed. The as-grown films were characterized by XPS, IR, SEM and Knoop microlhardness tester. The relationship between the films hardness and the growth rate indicated that the hardness of the film was dependent on several factors such as nitrogen source gas, substrate temperature and film thickness due to the variation of the composition and the structure of the film. Both nitrogen and carbon content could raise the film hardness, on which nitrogen content did stronger effect than carbon. The smooth morphology and continuous structure was benefit of obtaining high hardness. The maximum hardness of BON film was about 10 GPa.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.785-787
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• 1988

The capacitance-voltage (C-V) chracteristics of thin nitrided thermal oxides prepared by rapid termal nitridation(RTN) have been studied. The threshold voltages were calculated using C-V measurement and found to vary as the concentration of acceptor and the thickness of oxynitride. When the Si02 films were annealed in NH3 a decrease in the positive oxide charge due to Si-N bond was observed. In the case applied frequency is high and low, the high frequency depletion capacitance was higher than that of low frequency, which is indicative of high frequency surface conduction by mobile surface charge.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.176-176
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• 2013

CrZrN 3원계 박막은 상온에서 매우 우수한 기계적 특성을 나타내지만, $500^{\circ}C$ 이상의 고온에서는 Zr의 산화로 인하여 기계적 특성이 저하되게 된다. 따라서 본 연구에서는 CrZrN 박막의 고온 특성을 개선하기 위해서 내산화성이 향상에 영향을 미치는 표면 산화물을 만들기 위해 산소 원소를 첨가하여 CrZrON 4원계 oxynitride 박막을 segment target을 이용해 합성하였고, 박막의 미세구조를 분석하였다.