• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• BMB Reports
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• 제33권3호
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• pp.242-248
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• 2000

Phage display of proteins is a powerful tool for protein engineering since a vast library of sequences can be rapidly screened for a specific property. In this study, we develop da new phage display vector that was derived from a pET-25b(+) vector. The pET-25b(+) was modified in order that the expressed protein would have a T7-tag at the amino terminus and GpS (a major coat protein of M13 phage) at the carboxyl terminus. Another vector without the gp8 gene was also constructed. The newly developed phagemid vectors have several advantageous features. First, it is easy to examine whether or not the target proteins are functional and faithfully transported into the periplasmic space. This feature is due to the fact that recombinant proteins are produced abundantly in the pET system. Second, the T7-tag makes it possible to detect any target proteins that are displayed on the surface of filamentous bacteriophage. To verify the utility of the vector, the clones containing the glutathione S-transferase (GST) gene as a target were examined. The result showed that the GST produced from the recombinant vector was successfully transported into the periplasmic space and had the anticipated enzyme activity. Western blot analysis using a T7-tag antibody also showed the presence of the target protein displayed on the surface of the phage. The phages prepared from the recombinant clones were able to bind to glutathione-Sepharose and then eluted with glutathione. These results showed that the new vectors developed in this study are useful for the phage display of proteins.

• 한국표면공학회지
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• 제56권2호
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• pp.160-168
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• 2023

Recently, investigation on metallization is a key for a stretchable display. Amorphous metal such as Ni and Zr based amorphous metal compounds are introduced for a suitable material with superelastic property under certain stress condition. However, Ni and Zr based amorphous metals have too high resistivity for a display device's interconnectors. In addition, these metals are not suitable for display process chemicals. Therefore, we choose an aluminum based amprhous metal Al-Mo as a interconnector of stretchable display. In this paper, Amorphous Forming Composition Range (AFCR) for Al-Mo alloys are calculated by Midema's model, which is between 0.1 and 0.25 molybdenum, as confirmed by X-ray diffraction (XRD). The elongation tests revealed that amorphous Al-20Mo alloy thin films exhibit superior stretchability compared to pure Al thin films, with significantly less increase in resistivity at a 10% strain. This excellent resistance to hillock formation in the Al20Mo alloy is attributed to the recessed diffusion of aluminum atoms in the amorphous phase, rather than in the crystalline phase, as well as stress distribution and relaxation in the aluminum alloy. Furthermore, according to the AES depth profile analysis, the amorphous Al-Mo alloys are completely compatible with existing etching processes. The alloys exhibit fast etch rates, with a reasonable oxide layer thickness of 10 nm, and there is no diffusion of oxides in the matrix. This compatibility with existing etching processes is an important advantage for the industrial production of stretchable displays.

• KSBB Journal
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• 제26권3호
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• pp.199-205
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• 2011

Using tetrameric ${\beta}$-galactosidase as a model protein, anchoring motives were screened in Bacillus subtilis spore display system. Eleven spore coat proteins were selected considering their expression levels and the location in the spore coat layer. After chromosomal single-copy homologous integration in the amyE site of Bacillus subtilis chromosome, cotE and cotG were chosen as possible spore surface anchoring motives with their higher whole cell ${\beta}$-galactosidase activity. PAGE and Wester blot of extracted fraction of outer layer of purified spore, which express CotE-LacZ or CotG-LacZ fusion verified the existence of exact size of fusion protein and its location in outer coat layer of purified spore. ${\beta}$-galactosidase activity of spore with CotE-LacZ or CotG-LacZ fusion reached its highest value around 16~20 h of culture time in terms of whole cell and purified spore. After intensive spore purification with lysozyme treatment and renografin treatment, spore of BJH135, which expresses CotE-LacZ, retained only 1~2% of its whole cell ${\beta}$-galactosidase activity. Whereas spore of BJH136, which has cotG-lacZ cassette in the chromosome, retained 10~15% of its whole cell ${\beta}$-galactosidase activity, proving minor perturbation of CotG-LacZ, when incorporated in the spore coat layer of Bacillus subtilis compared to CotE-LacZ. Usage of Bacillus subtilis WB700, of which 7 proteases are knocked-out and thereby resulting in 99.7% decrease in protease activity of the host, did not prevent the proteolytic degradation of spore surface expressed CotG-LacZ fusion protein.

• 한국산학기술학회논문지
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• 제20권1호
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• pp.290-296
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• 2019

차량용 HUD는 자동차 전면 유리창에 안전 운전과 편의 운전 관련 다양한 정보를 표시해 주는 장치로 중요한 역할을 수행한다. 본 논문에서는 증강현실 기술에 적용이 가능한 대면적 비구면 자유형상 미러를 가공하기 위해 초정밀 가공기를 이용하여 가공을 실시하였고 그 결과를 측정하였다. 초정밀 다이아몬드 절삭은 정밀도가 높을 뿐만 아니라 표면 거칠기와 잔류 응력을 낮게 할 수 있어서 우수한 표면 무결성을 갖는 고급 부품의 생산에 유리하다. 또한 비구면 자유 형상의 몰드를 사용함으로써 광학 전달 함수의 개선, 왜곡 경로의 감소 및 특수 이미지 필드 곡률의 실현과 같은 장점을 얻을 수 있다. 이와 같은 비구면 자유형상 금형을 가공하기 위한 방법으로는 초정밀가공기를 이용한 다이아몬드 절삭 방법을 사용하였으며, 제작된 비구면 자유형상 미러 금형의 평가는 비구면 형상 측정기를 이용하여 실시하였다. 이러한 방법에 의해 $1{\mu}m$ 이하의 형상 정밀도(PV)와 $0.02{\mu}m$ 이하의 표면 거칠기(Ra)를 갖는 비구면 자유형상 금형을 제작할 수 있었다.

• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2000년도 추계학술발표대회 및 bio-venture fair
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• pp.191-193
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• 2000

B. macerans 유래의 CGTase를 yeast surface display기술을 이용하여 S. cerevisiae의 표면에 발현된 것을 halo-test와 immunofluorescence microscopy와 flow cytometry를 통하여 확인하였다. 재조합 효모는 효소의 cyclization작용을 저해하고 CD의 분해작용을 촉진하는 glucose와 maltose를 제거하는 발효공정과 표면 발현된 CGTase의 cyclization 공정을 동시에 수행할 수 있어 CD의 생산, 분리공정을 효율적으로 개선하였다.

• 반도체디스플레이기술학회지
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• 제12권4호
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• pp.39-44
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• 2013

In the semiconductor heat-treatment process, the temperature uniformity determines the film quality of a wafer. This film quality effects on the overall yield rate. The heat transfer of the wafer surface in the heat-treatment process equipment is occurred by convection and radiation complexly. Because of this, there is the nonlinearity between the wafer temperature and reactor. Therefore, the accurate prediction of temperature on the wafer surface is difficult without the direct measurement. The thermal camera and the T/C wafer are general ways to confirm the temperature uniformity on the heat-treatment process. As above ways have limit to measure the temperature in the precise domain under the micro-scale. In this study, we developed the thin film type temperature sensor using the MEMS technology to establish the system which can measure the temperature under the micro-scale. We combined the experiment and numerical analysis to verify and calibrate the system. Finally, we measured the temperature on the wafer surface on the semiconductor process using the developed system, and confirmed the temperature variation by comparison with the commercial T/C wafer.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제9권1호
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• pp.378-390
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• 2015

Image projectors can turn any surface into a display. Integrating a surface projection with a user interface transforms it into an interactive display with many possible applications. Hand gesture interfaces are often used with projector-camera systems. Hand detection through color image processing is affected by the surrounding environment. The lack of illumination and color details greatly influences the detection process and drops the recognition success rate. In addition, there can be interference from the projection system itself due to image projection. In order to overcome these problems, a gesture interface based on depth images is proposed for projected surfaces. In this paper, a depth camera is used for hand recognition and for effectively extracting the area of the hand from the scene. A hand detection and finger tracking method based on depth images is proposed. Based on the proposed method, a touch interface for the projected surface is implemented and evaluated.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.228-231
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• 2002

We report the effect of density of thin films on moisture adsorption and hydration of MgO thin film, usually used as a protective layer in AC-PDP After hydration, lots of hemispherical shaped clusters, $Mg(OH)_2$, formed on the surface of MgO thin films. However clusters formed on low-density thin films were bigger than those on high-density films. From ERD spectra, it seemed that the concentration of hydrogen was very high in the region 20 nm from the surface of MgO thin film. The low-density thin film had more hydrogen than high-density thin film. From simulation results of ERD and RBS it was found that hydration reaction also occurred in the inner part of the film. So diffusion of Mg atoms from the inner part of the film to the surface and $H_2O$ molecules from the surface to the inner part of the film is important. And because low density thin film has many short paths for diffusion of Mg atoms and $H_2O$ molecules, low-density thin film is more hydrated. So to suppress hydration of MgO thin films, high-density thin film is needed.

• 반도체디스플레이기술학회지
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• 제5권3호
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• pp.5-10
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• 2006

This paper investigates cutting qualities after laser dicing and predicts the problems that can be generated by laser dicing. And through 3 point bending test, die strength is measured and the die strength after laser dicing is compared with the die strength after mechanical sawing. Laser dicing is chiefly considered as an alternative to overcome the defects of mechanical sawing such as chipping on the surface and crack on the back side. Laser micromachining is based on the thermal ablation and evaporation mechanism. As a result of laser dicing experiments, debris on the surface of wafer is observed. To eliminate the debris and protect the surface, an experiment is done using a water soluble coating material and ultrasonic. The consequence is that most of debris is removed. But there are some residues around the cutting line. Unlike mechanical sawing, chipping on the surface and crack on the back side is not observed. The cross section of cutting line by laser dicing is rough as compared with that by mechanical sawing. But micro crack can not be seen. Micro crack reduces die strength. To measure this, 3 point bending test is done. The die strength after laser dicing decreases to a half of the die strength after mechanical sawing. This means that die cracking during package assembly can occur.