• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• BMB Reports
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• v.33 no.3
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• pp.242-248
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• 2000

Phage display of proteins is a powerful tool for protein engineering since a vast library of sequences can be rapidly screened for a specific property. In this study, we develop da new phage display vector that was derived from a pET-25b(+) vector. The pET-25b(+) was modified in order that the expressed protein would have a T7-tag at the amino terminus and GpS (a major coat protein of M13 phage) at the carboxyl terminus. Another vector without the gp8 gene was also constructed. The newly developed phagemid vectors have several advantageous features. First, it is easy to examine whether or not the target proteins are functional and faithfully transported into the periplasmic space. This feature is due to the fact that recombinant proteins are produced abundantly in the pET system. Second, the T7-tag makes it possible to detect any target proteins that are displayed on the surface of filamentous bacteriophage. To verify the utility of the vector, the clones containing the glutathione S-transferase (GST) gene as a target were examined. The result showed that the GST produced from the recombinant vector was successfully transported into the periplasmic space and had the anticipated enzyme activity. Western blot analysis using a T7-tag antibody also showed the presence of the target protein displayed on the surface of the phage. The phages prepared from the recombinant clones were able to bind to glutathione-Sepharose and then eluted with glutathione. These results showed that the new vectors developed in this study are useful for the phage display of proteins.

• Journal of the Korean institute of surface engineering
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• v.56 no.2
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• pp.160-168
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• 2023

Recently, investigation on metallization is a key for a stretchable display. Amorphous metal such as Ni and Zr based amorphous metal compounds are introduced for a suitable material with superelastic property under certain stress condition. However, Ni and Zr based amorphous metals have too high resistivity for a display device's interconnectors. In addition, these metals are not suitable for display process chemicals. Therefore, we choose an aluminum based amprhous metal Al-Mo as a interconnector of stretchable display. In this paper, Amorphous Forming Composition Range (AFCR) for Al-Mo alloys are calculated by Midema's model, which is between 0.1 and 0.25 molybdenum, as confirmed by X-ray diffraction (XRD). The elongation tests revealed that amorphous Al-20Mo alloy thin films exhibit superior stretchability compared to pure Al thin films, with significantly less increase in resistivity at a 10% strain. This excellent resistance to hillock formation in the Al20Mo alloy is attributed to the recessed diffusion of aluminum atoms in the amorphous phase, rather than in the crystalline phase, as well as stress distribution and relaxation in the aluminum alloy. Furthermore, according to the AES depth profile analysis, the amorphous Al-Mo alloys are completely compatible with existing etching processes. The alloys exhibit fast etch rates, with a reasonable oxide layer thickness of 10 nm, and there is no diffusion of oxides in the matrix. This compatibility with existing etching processes is an important advantage for the industrial production of stretchable displays.

• KSBB Journal
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• v.26 no.3
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• pp.199-205
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• 2011

Using tetrameric ${\beta}$-galactosidase as a model protein, anchoring motives were screened in Bacillus subtilis spore display system. Eleven spore coat proteins were selected considering their expression levels and the location in the spore coat layer. After chromosomal single-copy homologous integration in the amyE site of Bacillus subtilis chromosome, cotE and cotG were chosen as possible spore surface anchoring motives with their higher whole cell ${\beta}$-galactosidase activity. PAGE and Wester blot of extracted fraction of outer layer of purified spore, which express CotE-LacZ or CotG-LacZ fusion verified the existence of exact size of fusion protein and its location in outer coat layer of purified spore. ${\beta}$-galactosidase activity of spore with CotE-LacZ or CotG-LacZ fusion reached its highest value around 16~20 h of culture time in terms of whole cell and purified spore. After intensive spore purification with lysozyme treatment and renografin treatment, spore of BJH135, which expresses CotE-LacZ, retained only 1~2% of its whole cell ${\beta}$-galactosidase activity. Whereas spore of BJH136, which has cotG-lacZ cassette in the chromosome, retained 10~15% of its whole cell ${\beta}$-galactosidase activity, proving minor perturbation of CotG-LacZ, when incorporated in the spore coat layer of Bacillus subtilis compared to CotE-LacZ. Usage of Bacillus subtilis WB700, of which 7 proteases are knocked-out and thereby resulting in 99.7% decrease in protease activity of the host, did not prevent the proteolytic degradation of spore surface expressed CotG-LacZ fusion protein.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.1
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• pp.290-296
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• 2019

Head-up displays for vehicles play an important role in displaying various information about the safety and convenience of driving on the windshield of the vehicle. In this study, ultra-precision machining was performed and evaluated as a method for machining a large-area aspheric free-form mirror that is applicable to augmented reality technology. Precision diamond cutting is highly accurate and suitable for the production of advanced parts with excellent surface integrity, low surface roughness, and low residual stress. By using an aspheric free-form mold, it is possible to improve the optical transfer function, reduce the distortion path, and realize a special image field curvature. To make such a mold, the diamond cutting method was used, and the result was evaluated using an aspherical shape-measuring machine. As a result, it was possible to the mold with shape accuracy (PV) below $1{\mu}m$ and surface roughness (Ra) below $0.02{\mu}m$.

• 한국생물공학회:학술대회논문집
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• 2000.11a
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• pp.191-193
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• 2000

A whole-cell biocatalyst was constructed by immobilizing an enzyme on the surface of the yeast Saccharomyces cerevisiae. The gene encoding Bacillus macerans cyclodextrin glucanotransferase(CGTase) was fused with the AGA2 gene encoding a small peptide disulfide-linked to the aga1, a cell wall protein of a-agglutinin. The plasmid was introduced S. cerevisiae and expressed in the medium consisting of 10g/L yeast extract, 20g/L peptone, and 20g/L galactose. The activity was detected with the formation of cyclodextrin(CD) from 10g/L soluble starch. Surface display of CGTase was also verified with the halo-test, flow cytometry, and immunofluorescence microscopy. The recombinant S. cerevisiae produced ${\alpha}-cyclodextrin$ more efficiently than the free CGTase by simultaneous fermentation and cyclization as yeast consumes glucose and maltose which are inhibitors for CD synthesis.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.39-44
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• 2013

In the semiconductor heat-treatment process, the temperature uniformity determines the film quality of a wafer. This film quality effects on the overall yield rate. The heat transfer of the wafer surface in the heat-treatment process equipment is occurred by convection and radiation complexly. Because of this, there is the nonlinearity between the wafer temperature and reactor. Therefore, the accurate prediction of temperature on the wafer surface is difficult without the direct measurement. The thermal camera and the T/C wafer are general ways to confirm the temperature uniformity on the heat-treatment process. As above ways have limit to measure the temperature in the precise domain under the micro-scale. In this study, we developed the thin film type temperature sensor using the MEMS technology to establish the system which can measure the temperature under the micro-scale. We combined the experiment and numerical analysis to verify and calibrate the system. Finally, we measured the temperature on the wafer surface on the semiconductor process using the developed system, and confirmed the temperature variation by comparison with the commercial T/C wafer.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.1
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• pp.378-390
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• 2015

Image projectors can turn any surface into a display. Integrating a surface projection with a user interface transforms it into an interactive display with many possible applications. Hand gesture interfaces are often used with projector-camera systems. Hand detection through color image processing is affected by the surrounding environment. The lack of illumination and color details greatly influences the detection process and drops the recognition success rate. In addition, there can be interference from the projection system itself due to image projection. In order to overcome these problems, a gesture interface based on depth images is proposed for projected surfaces. In this paper, a depth camera is used for hand recognition and for effectively extracting the area of the hand from the scene. A hand detection and finger tracking method based on depth images is proposed. Based on the proposed method, a touch interface for the projected surface is implemented and evaluated.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.228-231
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• 2002

We report the effect of density of thin films on moisture adsorption and hydration of MgO thin film, usually used as a protective layer in AC-PDP After hydration, lots of hemispherical shaped clusters, $Mg(OH)_2$, formed on the surface of MgO thin films. However clusters formed on low-density thin films were bigger than those on high-density films. From ERD spectra, it seemed that the concentration of hydrogen was very high in the region 20 nm from the surface of MgO thin film. The low-density thin film had more hydrogen than high-density thin film. From simulation results of ERD and RBS it was found that hydration reaction also occurred in the inner part of the film. So diffusion of Mg atoms from the inner part of the film to the surface and $H_2O$ molecules from the surface to the inner part of the film is important. And because low density thin film has many short paths for diffusion of Mg atoms and $H_2O$ molecules, low-density thin film is more hydrated. So to suppress hydration of MgO thin films, high-density thin film is needed.

• Journal of the Semiconductor & Display Technology
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• v.5 no.3 s.16
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• pp.5-10
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• 2006

This paper investigates cutting qualities after laser dicing and predicts the problems that can be generated by laser dicing. And through 3 point bending test, die strength is measured and the die strength after laser dicing is compared with the die strength after mechanical sawing. Laser dicing is chiefly considered as an alternative to overcome the defects of mechanical sawing such as chipping on the surface and crack on the back side. Laser micromachining is based on the thermal ablation and evaporation mechanism. As a result of laser dicing experiments, debris on the surface of wafer is observed. To eliminate the debris and protect the surface, an experiment is done using a water soluble coating material and ultrasonic. The consequence is that most of debris is removed. But there are some residues around the cutting line. Unlike mechanical sawing, chipping on the surface and crack on the back side is not observed. The cross section of cutting line by laser dicing is rough as compared with that by mechanical sawing. But micro crack can not be seen. Micro crack reduces die strength. To measure this, 3 point bending test is done. The die strength after laser dicing decreases to a half of the die strength after mechanical sawing. This means that die cracking during package assembly can occur.