• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.16-21
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• 2020

How accurately reproducible energy is delivered to the wafer in the process of making thin films using PE-CVD (Plasma enhanced chemical vapor deposition) during the semiconductor process. This is the most important technique, and most of the reaction on the wafer surface is made by thermal energy. In this study, we studied the method of monitoring the change of thermal energy transferred to the wafer surface by monitoring the temperature change according to the change of the thin film formed on the showerhead facing the wafer. Through this research, we could confirm the monitoring of wafer thin-film which is changed due to abnormal operation and accumulation of equipment, and we can expect improvement of semiconductor quality and yield through process reproducibility and equipment status by real-time monitoring of problem of deposition process equipment performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.511-514
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• 2000

This work aimed to develop ITO (Indium Tin Oxide) thin films ablation with a KrF Eximer laser required for the application in flat panel display, especially patterning into small geometry on a large substrate area. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/cm$^2$. And its value is much smaller than using third harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the damaged ITO is changed into dark brown and irradiated spot is completely isolated form the undamaged surroundings by laser light. The XPS analysis showed that the relative surface concentration of Sn and In were essentially unchanged (In :Sn=5:1) after irradiating Eximer laser. Using aluminium mask made by second harmonic Nd:YAG laser the ITO patterning is carried out.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.120-123
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• 2019

The effect of surface plasmon on ZTO thin films was investigated. The phenomenon of depletion occurring in the interface of the ZTO thin film created a potential barrier and the dielectric layer of the depletion formed a non-mass particle called plasmon. ZTO thin film represents n-type semiconductor features, and surface current by plasma has been able to obtain the effect of improving electrical efficiency as a result of high current at positive voltage and low current at negative voltage. It can be seen that the reduction of electric charge due to recombination of electronic hole pairs by heat treatment of compound semiconductors induces higher surface current in semiconductor devices.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.46-50
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• 2018

The purpose of this study is to analyze effects of filtering system of cutting fluid which is used for machining silicon electrode. For the research, different sizes of filter clothes are applied to check grain size of sludge of cutting fluid. Surface roughness of machined workpiece, depth of damage inside of silicon electrode, and suspended solids of cutting fluid are experimented and analyzed. From these experiments, it is verified that filtering system of cutting fluid is very important factor for machining. Results of this study can affect various benefits to the semiconductor industry for better productivity and better atmospheric pollution in workplace.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.26-31
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• 2018

In this paper, surface defects and typical illumination mechanisms for steel plates are analyzed, and then optimum illumination mechanism is selected using discrete wavelet transform (DWT) synthetic images and discriminant measure (DM). The DWT synthetic images are generated using component images decomposed by Haar wavelet transform filter. The best synthetic image according to surface defects is determined using signal to noise ratio (SNR). The optimum illumination mechanism is selected by applying discriminant measure (DM) to the best synthetic images. The DM is applied using the tenengrad-euclidian function. The DM is evaluated as the degree of contrast using the defect boundary information. The performance of the optimum illumination mechanism is verified by quantitative data and intuitive image looks.

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.85-89
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• 2018

Temperature uniformity of a wafer in a semiconductor process is a very important factor that determines the overall yield. Therefore, it is very important to confirm the temperature characteristics of the chuck surface on which the wafer is lifted. The temperature characteristics of the chuck depend on the external heat source, the shape of the cooling channel inside the chuck, the material on the chuck surface, and so on. In this study, CFD confirms the change of temperature characteristics according to the stacking order of ceramic materials and inner coolant path on the chuck surface. Finally this study suggests the best cooling condition of electrostatic chuck.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.17-22
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• 2019

The method of electrical discharge machining (EDM), one of the processing methods based on non-traditional manufacturing procedures, is gaining increased popularity, since it does not require cutting tools and allows machining involving hard, brittle, thin and complex geometry. This present investigation details the determination of optimum process parameter to attain the better machining performance in EDM of AISI 4340 steel with graphite as a tool electrode. The experimental combinations are planned and analyzed by Taguchi's design of experiments approach. To predict the optimal condition, the experiments are conducted by using Taguchi's L27 orthogonal array. The influence of process variables such as discharge current, pulse on and pulse off time, voltage and spark speed were investigated to control the various desired performance measures such as surface roughness. Analysis of Variance (ANOVA) has to be performed to know the magnitude of each factor. Investigations indicate that the surface roughness is strongly depend on pulsed current.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.59-63
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• 2021

Upper electrode is one of core parts using plasma etching process at semiconductor. The purpose of this study is to analyze effects of cutting conditions for mechanical machining of silicon upper electrode. For this research, surface roughness of machined workpiece and depth of damage inside of silicon electrode are experimented and analyzed and different values of feed rate and depth of cut are applied for the experiments. From these experiments, it is verified that the surface roughness and internal damaged layer get worse according to take more fast feed rate. In conclusion, cutting condition is very important factor for machining. Results of this study can use to develop various parts which are made from single crystal silicon and affect various benefits to the semiconductor industry for better productivity.

• Journal of Information Display
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• v.2 no.3
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• pp.44-47
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• 2001

The extracted field emission current can be used to controllably heat microfabricated cold field emission cathode tips. The heating can be sufficient to smooth and recrystallize the tip surface by surface self-diffusion, and at least partially clean the surface of contaminants by thermal desorption. Self-heating not only allows for the achievement and maintenance of stable emission characteristics, but can be used to make the current-voltage characteristics of microfabricated field emitter tips nearly identical to one another. The resulting improvement in emission uniformity will allow for more reliable array operation at increased electron emission current densities.

• Journal of Microbiology and Biotechnology
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• v.16 no.3
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• pp.360-367
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• 2006

The endoinulinase gene (inu1) from Pseudomonas mucidolens was expressed on the cell surface of Saccharomyces cerevisiae by fusing with Aga2p linked to the membrane anchored protein, Aga1p. The inu1 gene of P. mucidolens was subcloned into the surface display vector, pCTcon (GAL1 promoter). The constructed plasmid, pCTENIU (8.5kb), was then introduced to S. cerevisiae EBY100 cells and the yeast transformants selected on synthetic defined media lacking uracil and inulin-containing media. The inu1 gene under the control of the GAL1 promoter was successfully expressed in the yeast transformants, and the surface display of endoinulinase confirmed by immunofluorescence microscopy, along with its enzymatic ability to form inulooligosaccharides (IOSs) from inulin. The total endoinulinase activity reached about 2.31 units/ml when the yeast transform ants were cultivated on a YPDG medium. To efficiently hydrolyze the inulin, various reaction conditions were examined, including the pH, temperature, and inulin source. The optimized conditions were then determined as follows: pH, 7.0; temperature, $50^{\circ}C$; inulin source, Jerusalem artichoke. Under the optimized condition and 46 units of endoinulinase per g of inulin, IOSs started to be produced after 10 min of enzymatic reaction. The highest yield, 71.2% of IOSs, was achieved after 30 h of reaction without any significant loss of the initial enzyme activity. As a result of the reaction with inulin, IOSs consisting of inulobiose (F2), inulotriose (F3), inulotetraose (F4), and inulopentaose (F5) were produced, and F4 was the major product.