• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.61-66
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• 1998

High quality c-axis oriented $YBa_{2}Cu_{3}O_{7}$ films were prepared using the pulsed laser deposition on $SrTiO_{3}$(100) substrate. The atomically smooth $SrTiO_{3}$surface with terraces one unit cell in height could be obtained by a high temperature annealing. $YBa_{2}Cu_{3}O_{7}$ thin films deposited on the substrates exhibited layer-by-layer growth with a c-axis unit cell height. $YBa_{2}Cu_{3}O_{7}$ thin films thus prepared showed critical temperature ${\ge}90$ K with transition width ${\le}0.6$ K, room temperature resistivity of ${\sim}300{\mu}{\Omega}cm$, and critical current density ${\sim}4.6{\times}10^{6}A/cm^{2}$ at 77 K.

• Progress in Superconductivity
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• v.8 no.2
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• pp.175-180
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• 2007

High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05a
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• pp.57-59
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• 2004

The melting temperature and critical temperature (Tc) of YBa$_2$Cu$_3$Ox with deferent content impurities of PbO and BaPbO$_3$ were studied. When the PbO was used as addition in YBa$_2$Cu$_3$Ox, although the melting point could be reduced, the superconductivity (the transition wide, ΔTc) became poor. From the XRD pattern of the sintered mixture of YBa$_2$Cu$_3$Ox and PbO it was known that there is a reaction between YBa$_2$Cu$_3$Ox and PbO, and the product is BaPbO$_3$. In the process of the reaction the superconducting phase of YBa$_2$Cu$_3$Ox was decreased and in the sample BaPbO$_3$became the main phase. Therefore the superconductivity was reduced. BaPbO$_3$was chosen as the impurity for the comparative study. The single phase BaPbO$_3$was synthesized by the simple way from both mixtures of BaPbO$_3$and PbO, BaPbO$_3$and PbO$_2$. Deferent contents of BaPbO$_3$(10%, 20%, 30%) were added in the YBa$_2$Cu$_3$Ox. By the phase analysis in the XRD patterns it was proved that there were not reactions between YBa$_2$Cu$_3$Ox and BaPbO$_3$. When BaPbO$_3$was used as impurity in YBa$_2$Cu$_3$Ox the superconductivity was much better than PbO as impurity in YBa$_2$Cu$_3$Ox But the melting point of YBa$_2$Cu$_3$Ox with BaPbO$_3$could not be found when the temperature was lower than 1000 $^{\circ}C$ in the DTA measurement.

• Progress in Superconductivity
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• v.14 no.1
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• pp.30-33
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• 2012

We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.

• Progress in Superconductivity and Cryogenics
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• v.20 no.4
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• pp.46-49
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• 2018

To improve in-field critical current densities ($J_c$) of $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) coated conductors(CCs) fabricated by the reactive co-evaporation by deposition and reaction (RCE-DR) process, employing the nominal composition of Gd:Ba:Cu=1:1:2.5, we tried to refine the $Gd_2O_3$ particles trapped in the GdBCO superconducting matrix. For this purpose, we carefully selected the processing conditions on the stability phase diagram of GdBCO for this composition. By lowering the growth temperature of $Gd_2O_3$ in the liquid, we could refine the average particle size of $Gd_2O_3$ particles trapped in the GdBCO matrix and also achieve the zero-resistive transition temperatures ($T_{c,zero}$) of 92.3~94.2 K. Unfortunately, however, it was unsuccessful to achieve enhanced in-field $J_c$ values from these samples because of an air-contamination of the amorphous precursor film before its conversion into crystalline GdBCO film, suggesting that any exposure of the amorphous precursor film to air is fatal in obtaining high performance GdBCO CCs via the RCE-DR process.

• Progress in Superconductivity and Cryogenics
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• v.21 no.3
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• pp.13-17
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• 2019

We investigate the effect of thermal annealing on $MgB_2$ thin films with thicknesses of 400 and 800 nm, irradiated by 350 keV C-ions with a dose of $1{\times}10^{15}atoms/cm^2$. Irradiation by low-energy C-ions produces atomic lattice displacement in $MgB_2$ thin films, improving magnetic field performance of critical current density ($J_c$) while reducing the superconducting transition temperature ($T_c$). Interestingly, the lattice displacement and the $T_c$ are gradually restored to the original values with increasing thermal annealing temperature. In addition, the magnetic field dependence of $J_c$ also returns to that of the pristine state together with the restoration of $T_c$. Because $J_c$(H) is sensitive to the type and density of the disorder, i.e. vortex pinning, the recovery of $J_c$(H) in irradiated $MgB_2$ thin films by thermal annealing indicates that low-energy C-ion irradiation on $MgB_2$ thin films primarily causes lattice displacement. These results provide new insights into the application of low-energy irradiation in strategically engineering critical properties of superconductors.

• Korean Journal of Materials Research
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• v.32 no.2
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• pp.66-71
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• 2022

In this article, Pb₂Ba_1.7Sr_0.3Ca₂Cu₃O_10+δ superconductor material was synthesized using conventional solid-state reaction method. X-ray diffraction (XRD) analysis demonstrated one dominant phase 2223 and some impurities in the product powder. The strongest peaks in the XRD pattern were successfully indexed assuming a pseudo-tetragonal cell with lattice constants of a = 3.732, b = 3.733 and c = 14.75 Å for a Pb-Based compound. The crystallite size and lattice strain between the layers of the studied compound were estimated using several methods, namely the Scherrer, Williamson-Hall (W.H), size-strain plot (SSP) and Halder Wagner (H.W) approach. The values of crystallite size, calculated by Scherrer, W.H, SSP and H.W methods, were 89.4540774, 86.658638, 87.7555823 and 85.470086 Å, respectively. Moreover, the lattice strain values obtained by W.H, SSP and H.W methods were 0.0063240, 0.006325 and 0.006, respectively. It was noted that all crystallite size results are consistent; however, the best method is the size-strain plot because it gave a value of R² approaching one. Furthermore, degree of crystallites was calculated and found to be 59.003321%. Resistivity analysis suggests zero-resistance, which is typical of superconducting materials at critical temperature. Four-probe technique was utilized to measure the critical temperature at onset T_c(onset), zero resistivity T_{c(off set)}, and transition (width ΔT), corresponding to temperatures of 128 K, 116 K, and 12 K, respectively.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.47-50
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• 2007

[ $ZnCr_2O_4$ ] shows geometrically frustrated magnet. Recently, $CoCr_2O_4$ has been investigated for multiferroic property and dielectric anomalies by spin-current model. Polycrystalline $CoCr_2O_4$ and $CoCrFeO_4$ compounds was prepared by wet-chemical process. Crystallographic and magnetic properties of $CoCr_2O_4$ and $CoCrFeO_4$ were investigate by using the x-ray diffractometer(XRD), vibrating sample magnetometer(VSM), superconducting quantum interference device magnetometer(SQUID), and $M\"{o}ssbauer$ spectroscopy. The crystal structure was found to be single-phase cubic spinel with space group of Fd3m. The lattice constants of $CoCr_2O_4$ and $CoCrFeO_4$ $a_0$ were determined to be 8.340 and 8.377 ${\AA}$, respectively. The ferrimagnetic transition temperature for the both samples were observed at 97 K and 320 K. The $M\"{o}ssbauer$ absorption spectra at 4.2 K show that the well developed two sextets are superposed with small difference of hyperfine field($H_{hf1}=507\;and\;H_{hf2}=492\;kOe$). Isomer shift values($\delta$) of the two sextets are found to be 0.33 and 0.34 mm/s relative to the Fe metal, respectively, which are consistent with the high spin $Fe^{3+}$ charge state.