• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1844-1846
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• 2005

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR property of self-assembled 4,4- Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment$(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/l$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2V to +2V with 299K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found the NDR voltage of the nitro-benzene is $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ (positive region), respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• Journal of Electrochemical Science and Technology
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• v.12 no.3
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• pp.323-329
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• 2021

This work presents a contrasting behavior of formic acid oxidation (FAO) on the Pt and Bi deposits on different Pt substrates. Using irreversible adsorption method, Bi and Pt were sequentially deposited on Pt electrodes of nanoparticle (Pt NP) and disk (Pt disk). The deposited layers of Bi and Pt on the Pt substrates were characterized with X-ray photoelectron spectroscopy, transmission microscopy and scanning tunneling microscopy. The electrochemical behaviors and FAO enhancements of Pt NP and Pt disk with deposited Bi only (i.e., Bi/Pt NP and Bi/Pt disk), were similar to each other. However, additional deposition of Pt on Bi/Pt NP and Bi/Pt disk (i.e., Pt/Bi/Pt NP and Pt/Bi/Pt disk) changed the electrochemical behavior and FAO activity in different ways depending on the shapes of the Pt substrates. With Pt/Bi/Pt NP, the hydrogen adsorption was suppressed and the surface oxidation of Pt was enhanced; while with Pt/Bi/Pt disk, the opposite behavior was observed. This difference was interpreted as a stronger interaction between the deposited Bi and Pt on Pt NP than that on Pt disk. The FAO performance on Pt/Bi/Pt NP is much better than that on Pt/Bi/Pt disk, most likely due to the difference in the interaction between the deposited Pt and Bi depending on the shapes of Pt substrates. In designing FAO electrochemical catalysts using Pt and Bi, the shape of a Pt substrate was concluded to be critically considered.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.152-161
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• 2006

In order to test the capacity of Si(5 5 12) as a potential template for nanowire fabrication, Bi/Si(5 5 12) system has been studied by STM. With Bi deposition, Si(5 5 12) has been transformed to Si(3 3 7) terrace. Initially Bi atoms selectively replace Si-dimers and Si-adatoms with Bi-dimers and Bi-adatoms, respectively. With extended Bi adsorption, Bi-dimers adsorb on the pre-adsorbed Bi-dimers and Bi-atoms. These dimers in the second layer form Bi-dimer pairs having relatively stable $p^3$ bonding, Finally, the Bi-dimer adsorbs on the Bi-dimers in the second layer and saturates. It can be deduced that both surface transformation to (3 3 7) and site-selective Bi adsorption are possible due to substrate-strain relaxation through inserting Bi atoms into subsurface of Si substrate.

• Journal of Life Science
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• v.27 no.12
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• pp.1410-1414
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• 2017

Escherichia coli tryptophan synthase (TS) contains ${\alpha}_2{\beta}_2$, which catalyzes the final two steps in Trp biosynthesis. A molecular tunnel exists between the two active sites of ${\alpha}$ and ${\beta}$ subunits in TS. Via intersubunit communication, TS increases catalytic efficiency, including substrate channeling. The ${\beta}$ subunit of TS is composed of two domains, one of which, the COMM (communication) domain, plays an important role in intersubunit communication. The ${\alpha}$ subunit has a TIM barrel structure. This protein has functional regions at the C terminal of ${\beta}$ pleated sheets and in its loop regions. Three regions of the ${\alpha}$ subunit (${\alpha}L6$ [${\alpha}-loop$ L6], ${\alpha}L2$, and ${\alpha}L3$) are implicated in intersubunit communication. In the present study, conformational changes in ${\alpha}L6$ were monitored by measuring the sensitivity of mutant proteins in these regions to trypsin. The addition of a ${\alpha}$ subunit-specific ligand, D,L-${\alpha}$-glycerophosphate (GP), partially restored the sensitivity of mutant proteins to trypsin. In contrast, the addition of the ${\beta}$ subunit-specific ligand L-serine (Ser) resulted in varied sensitivity to trypsin, with an increase in PT53 (substitution of Pro with Thr at residue 53) and DG56, decrease in NS104 and wild type, and no change in GD51 and PH53. This finding may be related to several reaction intermediates formed under this condition. The addition of both GP and Ser led to a highly stable state of the complex. The present results are consistent with the current model. The method used herein may be useful for screening residues involved in intersubunit communication.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.453-457
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• 2007

Zinc oxide (ZnO) and Ga doped zinc oxide (GZO) with different thickness in range of 10nm to 100nm are prepared on glass substrate by RF magnetron sputtering at room temperature. The structural and optical properties of the thin films is evaluated. The structural properties of ZnO and GZO are investigated by Tunneling Electron Microscopy (TEM) and scanning electron microscopy (SEM). Optical properties are also investigated by UV-VIS-NIR spectrophotometer (200$\sim$1400nm). The much larger grain size of ZnO compared to GZO decreased the light scattering at the grain boundary and improved the transmittance. The transmittance of ZnO is higher than that of GZO through all of the ranges of wavelengths. In case of over 50nm, we found that the transmittance of ZnO is 20% higher than that of GZO.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.189-195
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• 2001

We prepared TMR junctions of NiFe(170 )/CoFe(48 )/Al(13 )-O/CoFe(500 )/Ta(50 ) structure on 2.5$\times$2.5 $\textrm{cm}^2$ area Si/SiO$_2$ substrates in order to investigate the uniformity of magnetoresistance(MR) value using a ICP magnetron sputter. Each layer was deposited by the ICP magnetron sputter and tunnel barrier was formed by the plasma oxidation method. We measured MR ratio and resistance of TMR devices with four-terminal probe system by applying external magnetic field. Although we used ICP sputter which is known as superior to make uniform films, the standard variation of MR ratio was 2.72. The variation was not dependent on the TMR devices location of a substrate. We found that MR ratio and spin-flip field (H's) increased as the resistance increased, which may be caused by local interface irregularity of the insulating layer. The variation of resistance value was 64.19 and MR ratio was 2.72, respectively. Our results imply that to improve the insulating layer fabrication process including annealing process to lessen interface modulation in order to mass produce the TMR devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.362-362
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• 2010

Today, vast attention has been paid to periodic arrays of nanostructures due to their potential for applications such as memory with huge storage density. Such application requires large-scale fabrication of well ordered nano-sized structures. One of the most widely used methods for the ordered nanostructures is lithography. This top-down process, however, has the limit to reduce size. Here the promising alternative is the self-organization of ordered nano-sized structures such as large scale 2d carbon-induced reconstructions on W(110). In the present study, we report on the first well-resolved atomic resolution STM studies of the well-known R($15{\times}3$) and R($15{\times}12$) carbon induced reconstruction of the W(110). From the atomic image of R($15{\times}3$) for different values of tunneling gap resistance, we can tell there are no missing atoms in unit cells of R($15{\times}3$) and some atomic displacements are substantial from the clean W(110), even though not all the imaged position of atoms correspond to tungsten, but may include those of carbon. We are considering two cases; First case is related to lattice deformation, or top layer of W(110) is deformed in the process of relief of strain caused by random inserting of carbon atoms possibly in the interstitial position. In the second case, R($15{\times}3$) unit cell results from a coincidence lattice between clean W(110) substrate and tungsten carbide overlayer which has rectangular atomic arrangement and giving R($15{\times}3$) coincidence lattice. beta-W2C showing rectangular unit cell should be a candidate. Further, we report on new reconstructions. Unlike the well-known R($15{\times}12$) consisting of two parts, two inner structures between two "Backbone" structures. The new reconstruction, which we found for the first time, contains more parts between the "Backbone"s. Sometimes we can observe the reconstruction consists of only inner parts without "Backbone" parts. Thus, the observed reconstruction can be built by constructing of two types of "Lego"-like block. Moreover, the rectangle shape of "Backbone" transform to parallelogram-like shape over time, the so-called wavy-R($15{\times}12$). Adsorption of hydrogen can be the reason for this transformation.