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Reconstruction Change of Si(5 5 12) Induced by Selective Bi Adsorption  

Cho Sang-Hee (Chonbuk National University)
Seo Jae-M. (Chonbuk National University)
Publication Information
Journal of the Korean Vacuum Society / v.15, no.2, 2006 , pp. 152-161 More about this Journal
Abstract
In order to test the capacity of Si(5 5 12) as a potential template for nanowire fabrication, Bi/Si(5 5 12) system has been studied by STM. With Bi deposition, Si(5 5 12) has been transformed to Si(3 3 7) terrace. Initially Bi atoms selectively replace Si-dimers and Si-adatoms with Bi-dimers and Bi-adatoms, respectively. With extended Bi adsorption, Bi-dimers adsorb on the pre-adsorbed Bi-dimers and Bi-atoms. These dimers in the second layer form Bi-dimer pairs having relatively stable $p^3$ bonding, Finally, the Bi-dimer adsorbs on the Bi-dimers in the second layer and saturates. It can be deduced that both surface transformation to (3 3 7) and site-selective Bi adsorption are possible due to substrate-strain relaxation through inserting Bi atoms into subsurface of Si substrate.
Keywords
Scanning tunneling microscopy; High-mailler-index Si surfce; Bi;
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