Browse > Article
http://dx.doi.org/10.5757/JKVS.2007.16.6.453

The optical properties of GZO and ZnO thin films deposited by RF magnetron sputtering  

HwangBoe, S.J. (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Jeon, H.H. (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Kim, G.C. (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Lee, J.S. (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Kim, D.H. (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Choi, W.B. (Department of Mechanical and Materials Engineering, Florida International University)
Jeon, M.H. (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Publication Information
Journal of the Korean Vacuum Society / v.16, no.6, 2007 , pp. 453-457 More about this Journal
Abstract
Zinc oxide (ZnO) and Ga doped zinc oxide (GZO) with different thickness in range of 10nm to 100nm are prepared on glass substrate by RF magnetron sputtering at room temperature. The structural and optical properties of the thin films is evaluated. The structural properties of ZnO and GZO are investigated by Tunneling Electron Microscopy (TEM) and scanning electron microscopy (SEM). Optical properties are also investigated by UV-VIS-NIR spectrophotometer (200$\sim$1400nm). The much larger grain size of ZnO compared to GZO decreased the light scattering at the grain boundary and improved the transmittance. The transmittance of ZnO is higher than that of GZO through all of the ranges of wavelengths. In case of over 50nm, we found that the transmittance of ZnO is 20% higher than that of GZO.
Keywords
ZnO; GZO; SEM; TEM; transmittance;
Citations & Related Records
연도 인용수 순위
  • Reference
1 T. Minami, Semicond. Sci. Technol. 20, S35 (2005)   DOI   ScienceOn
2 I. S. Kim, S. J. Heong, S. S. Kim , and B. T. Lee, Semicond. Sci .Technol.19, L29 (2004)   DOI   ScienceOn
3 T. Minami, MRS Bull. 25, 38 (2000)
4 J. Hu and R. G. Gordon, Sol. Cells. 30, 437 (1991)   DOI   ScienceOn
5 T. Minami, T. Miyata, Y. Ohtani, and T. Kuboi, Phys. Stat. Sol. 1, 31-33 (2007)
6 E. J. Egerton, A. K. Sood, R. Singh, Y. R. Puri, R. F. Davis, J. Pierce, D. C. Look and T. Steiner, J. Electronic Materials. 34, 949 (2005)   DOI   ScienceOn
7 C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, E.M. Kaidashev, M. Lorenz, and M. Grundmann, Appl. Phys. Lett. 83, 1974 (2003)   DOI   ScienceOn
8 K. Ellmer, J. Phys. D：Appl. Phys. 34, 3097-3108 (2001)   DOI   ScienceOn
9 K. Keem, J. Kim, G. T. Kim, J. S. Lee, B. Min, K. Cho, M. Y. Sung, and S. Kim, Appl. Phys Lett. 84, 4376 (2004)   DOI   ScienceOn
10 T. W. Kim, K. D. Kwack, J. K. Kim, Y. S. Yoon, J. H. Bahang, and H. L. Park, Solid State Commun. 127, 4376 (2003)
11 T. Matsumoto, H. Kato, K. Miyamoto, M Sano, and T. Yao, Appl. Phys. Lett. 82, 1231 (2002)
12 M. Zerdali, S. Jamzaoui, F J. Teherani, and D. Rogers, Mater. Lett. 60, 504 (2006)   DOI   ScienceOn
13 B.)B. H. Choi, H. B. Im, J. S. Song and K. H. Yoon, Thin Solid Films. 193, 712 (1990)   DOI   ScienceOn