• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2003년도 학술대회지
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• pp.368-376
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• 2003

In this research, DLC thin films are produced as several hundred nm thickness by PE-CVD method. And then these thin films are estimated tribological characteristics to find out useful possibilities as a protecting film for high-quality function and life extension at MEMs by mechanical properties observation . These are measured thickness and residual stress of DLC coating. Compared after measuring friction coefficient, adhesion force, hardness, cohesive force of coating films. As results all test, we can decide several conclusions. First, friction coefficient decreased, as the load increased. otherwise, friction coefficient increased, as thickness of coating film increased under low load$(1\~50mN)$. Secod, adhesion force increased as thickness of coating films. Third, hardness of coating film is affected by substrate coating film when it is less than thickness of 300nm and it has general hardness of DLC coating film when it is more than thickness of 500nm. Fourth, cohesive force of coating film is complexly affected by hardness, adhesion force, residual stress, etc.

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.209-215
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• 2013

DSSCs electrical characteristics and efficiency fabricated with different tape casting thickness Pt counter electrodes and different thickness between $TiO_2$ photo electrode and Pt counter electrode substrate were studied. 1 layer Pt counter electrode shows 3.979% efficiency. Efficiency increased as tape casting thickness decreased. The lowest open-circuit voltage was a 0.726 V and the highest short-circuit current was a 2.188 mA on 1 layer Pt counter electrode. On the different thickness between two substrates, the lowest open-circuit voltage 0.712 V and the highest short-circuit current 2.787 mA was measured at $60{\mu}m$ surlyn film thickness and it shows the highest value of 5.067% efficiency.

• 한국진공학회지
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• 제6권S1호
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• pp.70-74
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• 1997

The study of the thickness dependence of the electron energy structure of Fe, Ni, Ti and Zr sublayers in Ni/Ti and Fe/Zr multilayers by using the experimental and computer simulated optical spectroscopy has been performed. A series of Ni/Ti and Fe/Ze multiayered films (MLF) with a bilayer period of 0.5 - 30 nm and constant (Ni/Ti) / different (Fe/Zr) sublayer thickness ratios were prepared by using computer-controlled double-pair target face-to-face sputtering onto a glass substrate at room temperature (RT) Computer simulation of the resulting optical properties of these MLF was carried out by solving of multireflection problem with a matrix method assuming either "sharp" interfaces resulting in rectangular depth profiles of the components or "mixed" (alloy-like) interfaces of variable thickness between pure-metal sublayers. Optical constants of pure bulk metals as well as equiatomic alloy interfaces were employed in these simulations. It was shown that the difference between experimental and simulated optical properties of the investigated MLF increases with decrease in sublayer thickness. This result allows to conclude that the electronic structures of sublayers below 4-5 nm thickness in mlf differ from the corresponding bulk metals.ponding bulk metals.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.389.2-389.2
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• 2014

Polydimethylsiloxane (PDMS) based electronic devices are widely used for various applications in large area electronics, biomedical wearable interfaces and implantable circuitry where flexibility and/or stretchability are required. A few fabrication methods of electronic devices directly on PDMS substrate have been reported. However, it is well known that micro-cracks appear in the metal layer and in the lithography pattern on a PDMS substrate. To solve the above problems, a few studies for fabrication of stiff platform on PDMS substrate have been reported. Thin-film islands of a stiff region are fabricated on an elastomeric substrate, and electronic devices are fabricated on these stiff islands. When the substrate is stretched, the deformation is mainly accommodated by the substrate, and the stiff islands and electronic devices experience relatively small strains. Here, we report a new method to achieve stiff islands structures on an elastomeric substrate at a various thickness, as the platform for stretchable electronic devices. The stiff islands were defined by conventional photolithography on a stress-free elastomeric substrate. This technique can provide a practical strategy for realizing large-area stretchable electronic circuits, for various applications such as stretchable display or wearable electronic systems.

• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2002년도 생물공학의 동향 (X)
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• pp.351-354
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• 2002

부산광역시 수영 하수처리장의 소화조에서 농축조로 보내지는 혐기성 슬러지를 탈기된 증류수와 1:1로 희석하여 11.900 mg/L로 만든 후 혐기성 고정 생물막 반응기에 15일간 생물막을 부착시킨 후, 부유 슬러시를 제거하고 각 반응기에 각각 8.00 mgTOC/L, 9.76 mgTOC/L, 및 18.97mgTOC/L의 기질 농도를 유입하여 HRT 0.496일로 각 반응기에 연속적으로 주입하여 실험하였다. 기질 전달 현상과 관련하여 각 반응기에 대한 실험 결과는, 저농도로 기질이 유입된 반응기 l과 2에서는 생물막 두께 및 기질 제거율, 기질 소비 속도 상수($k_v$), 유효 확산 계수($D_{eff}$) 가 비슷하였으나, 고농도로 기질이 유입된 반응기 3에는 자농도로 기질이 유입된 반응기 1과 2 보다 높은 값을 나타내었다. 이는 본 실험에 사용된 혐기성 미생물이 고농도의 기질을 유입하였을 때, 더욱 원활하게 성장함에 따라 높은 기질 소비를 나타내었다.

• Progress in Superconductivity
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• 제8권1호
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• pp.93-97
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• 2006

YBCO films were deposited on a moving substrate by a spray pyrolysis method using nitrate aqueous solution as precursors. Deposition was made on $LaAlO_3$(100) single crystal substrate by spraying precursor droplets generated by a concentric nozzle. The cation ratio of precursor solution was Y:Ba:Cu=1:2.65:4.5. The distance between nozzle and substrate was 15 cm. Substrate was transported with a speed ranging from 0.23 cm/min to 0.5 cm/min. Films were deposited at the pressure ranging from 10 Torr to 20 Torr and the deposition temperature was ranged from $740^{\circ}C\;to\;790^{\circ}C$. Oxygen partial pressure was controlled between 1 Tow and S Torr. Superconducting YBCO films were obtained from $740^{\circ}C\;to\;790^{\circ}C$ with an oxygen partial pressure of 3 Torr. Scanning electron microscope(SEM) and X-ray diffraction(XRD) observation revealed that films are smooth and highly texture with(001) plans parallel to substrate plane. Highest Jc was 0.72 $MA/cm^2$ at 77K and self-field for the film with a thickness of 0.15 m prepared at a substrate temperature of $740^{\circ}C$ and $PO_2$=3 Torr.

• 한국재료학회지
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• 제21권3호
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• pp.174-179
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• 2011

Ultra-thin aluminum (Al) and tin (Sn) films were grown by dc magnetron sputtering on a glass substrate. The electrical resistance R of films was measured in-situ method during the film growth. Also transmission electron microscopy (TEM) study was carried out to observe the microstructure of the films. In the ultra-thin film study, an exact determination of a coalescence thickness and a continuous film thickness is very important. Therefore, we tried to measure the minimum thickness for continuous film (dmin) by means of a graphical method using a number of different y-values as a function of film thickness. The raw date obtained in this study provides a graph of in-situ resistance of metal film as a function of film thickness. For the Al film, there occurs a maximum value in a graph of in-situ electrical resistance versus film thickness. Using the results in this study, we could define clearly the minimum thickness for continuous film where the position of minimum values in the graph when we put the value of Rd3 to y-axis and the film thickness to x-axis. The measured values for the minimum thickness for continuous film are 21 nm and 16 nm for sputtered Al and Sn films, respectively. The new method for defining the minimum thickness for continuous film in this study can be utilized in a basic data when we design an ultra-thin film for the metallization application in nano-scale devices.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.75.1-75.1
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• 2007

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.7.1-7.1
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• 2008

• Advances in nano research
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• 제1권4호
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• pp.219-228
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• 2013

We report on the preparation of iron pyrite ($FeS_2$) using pulsed electron ablation of two targets, namely, a mixture of sulfur and iron compound target, and a natural iron pyrite target. Thin films of around 50 nm in thickness have been deposited on glass substrates under Argon background gas at 3 mTorr, and at a substrate temperature of up to $450^{\circ}C$. The thin films have been analyzed chemically and examined structurally using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and visible Raman spectroscopy. The morphology and thickness of the films have been assessed using scanning electron microscopy (SEM) and visible spectroscopic reflectance. The preliminary findings, using a synthetic target, show the presence of iron pyrite with increasing proportion as substrate temperature is increased from $150^{\circ}C$ to $250^{\circ}C$. The data have not shown any evidence of pyrite in the deposited films from a natural target.