• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1724-1726
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• 2000

We have investigated a molecular orientation effect of septithiophene(7T), the conjugated linear septenary of thiophene, on its optical and electrical properties. Vacuum evaporation of septithiophene on a substrate induces a upright orientation. We rubbed the pre-layer to lie down molecules. As a result, we could get a horizontal molecular orientation. Dichroic ratio is about 2 at 418nm from UV/visible absorption spectrum. To investigate the electrical characteristics, we fabricated devices with septithiophene as a semiconducting material. The conductivity with horizontal septithiophene orientation is about one order gloater than that of upright septithiophene.

• Bulletin of the Korean Chemical Society
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• v.24 no.7
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• pp.953-956
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• 2003

Hexagonal GaN (h-GaN) films have been grown on Si(111) substrates by metal organic chemical vapor deposition using the azidodiethylgallium methylamine adduct, Et₂Ga(N₃)·NH₂Me, as a new single precursor. Deposition was carried out in the substrate temperature range 385-650 °C. The GaN films obtained were stoichiometric and did not contain any appreciable amounts of carbon impurities. It was also found that the GaN films deposited on Si(111) had the [0001] preferred orientation. The photoluminescence spectrum of a GaN film showed a band edge emission peak characteristic of h-GaN at 378 nm.

• Journal of Information Display
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• v.13 no.4
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• pp.151-157
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• 2012

A simple method of fabricating out-coupling structures was demonstrated via solution-processing to enhance light extraction from organic light-emitting diodes (OLEDs). Scattering layers were easily obtained by spin-coating an $SiO_2$ sol solution that contained $TiO_2$ particles. By introducing the scattering layer and the solution-processible corrugated structure as internal and external extraction layers, the OLEDs showed increased external quantum efficiency without a change in the electroluminescence spectrum compared to conventional devices. Using these solution-processible out-coupling structures, nearly all-solution-processed OLEDs with enhanced light extraction could be fabricated. The light extraction enhancement is attributed to the suppression by the out-coupling structures of the light-trapping that arose at the interface of the glass substrate and the air.

• Journal of Microbiology and Biotechnology
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• v.16 no.4
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• pp.619-622
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• 2006

Biotransformation is a good tool to synthesize regioselective compounds. It could be performed with diverse sources of genes, and microorganisms provide a myriad of gene sources for biotransformation. We were interested in modification of flavonoids, and therefore, we cloned a putative O-methyltransferase from Bacillus cereus, BcOMT-2. It has a 668-bp open reading frame that encodes a 24.6-kDa protein. In order to investigate the modification reaction mediated by BcOMT-2, it was expressed in E. coli as a His-tag fusion protein and purified to homogeneity. Several substrates such as naringenin, luteolin, kaempferol, and quercetin were tested and reaction products were analyzed by thin layer chromatography (TLC) and high performance liquid chromatography (HPLC). BcOMT-2 could transfer a methyl group to substrates that have a 3' functional hydroxyl group, such as luteolin and quercetin. Comparison of the HPLC retention time and UV spectrum of the quercetin reaction product with corresponding authentic 3'-methylated and 4'-methylated compounds showed that the methylation position was at either the 3'-hydroxyl or 4'-hydroxyl group. Thus, BcOMT-2 transfers a methyl group either to the 3'-hydroxyl or 4'-hydroxyl group of flavonoids when both hydroxyl groups are available. Among several flavonoids that contain a 3'- and 4'-hydroxyl group, fisetin was the best substrate for the BcOMT-2.

• Journal of Sensor Science and Technology
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• v.22 no.5
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• pp.327-332
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• 2013

Nickel oxide films using RF sputter was formed on the $SiO_2/Si$ substrate at the room temperature controlled with water circulation system. The feasibility of nickel oxide film as a bolometric material was demonstrated. GIXRD spectrum on NiO(111), NiO(200), and NiO(220) orientation expected as the main peaks were appeared in the grown nickel oxide films. The typical resistivity acquired at the RF power of 100W was about $34.25{\Omega}{\cdot}cm$. And it was reduced to $18.65{\Omega}{\cdot}cm$ according to the increase of the RF power to 400W. The TCR of fabricated micro-bolometer with the resistivity of $34.25{\Omega}{\cdot}cm$ was $-2.01%/^{\circ}C$. The characteristics of fabricated nickel oxide film and micro-bolometer were analyzed with XRD pattern, resistivity, TCR, and SEM images.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.397-397
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• 2007

Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided(ITO)/zinc oxide(ZnO)/Ag/oxide(ZnO)/ITO. With about 50nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.120-123
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_2$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV. The exciton peak, $I_1^d$, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_1^d$ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{Se}-V_{Zn})-V_{Zn}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.318-324
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• 2007

We report on a strong violet luminescence emitted from the ZnO:Al films grown on glass substrate by radio-frequency magnetron sputtering. The growth of high-quality thin films and their optical properties are controlled by adjusting the mixture ratio of Ar and $O_2$, which is used as the sputtering gas. The crystallinity of the films is improved as the oxygen flow ratio is decreased, as evidenced in both x-ray diffractometer and atomic force microscope measurements. As for the violet luminescence measured by photoluminescence (PL) spectroscopy, the peak energy and intensity of the PL signal are decreased with increasing the oxygen flow ratio. The peak energy of the violet PL spectrum for the thin film with an oxygen flow ratio of 50 % is almost constant, regardless of the increase of laser Power and temperature. These results indicate that the violet PL signal is probably due to defects related to interstitial Zn atoms.

• Journal of the Korean Society for Nondestructive Testing
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• v.34 no.6
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• pp.457-466
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• 2014

This paper presents an analytic and numerical simulation of the generation and propagation of pico-second ultrasound with nano-scale wavelength, enabling the production of bulk waves in thin films. An analytic model of laser-matter interaction and elasto-dynamic wave propagation is introduced to calculate the elastic strain pulse in microstructures. The model includes the laser-pulse absorption on the material surface, heat transfer from a photon to the elastic energy of a phonon, and acoustic wave propagation to formulate the governing equations of ultra-short ultrasound. The excitation and propagation of acoustic pulses produced by ultra-short laser pulses are numerically simulated for an aluminum substrate using the finite-difference method and compared with the analytical solution. Furthermore, Fourier analysis was performed to investigate the frequency spectrum of the simulated elastic wave pulse. It is concluded that a pico-second bulk wave with a very high frequency of up to hundreds of gigahertz is successfully generated in metals using a 100-fs laser pulse and that it can be propagated in the direction of thickness for thickness less than 100 nm.

• Journal of Surface Science and Engineering
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• v.39 no.1
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• pp.9-12
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• 2006

Al-doped ZnO(AZO)/Ag/AZO multi-layer films deposited on PET substrate by RF magnetron sputtering have a much better electrical properties than Al-doped ZnO single-layer films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the optimum thickness of Ag layers was determined to be $112{\AA}$ for high optical transmittance and good electrical conductivity. With about $1800{\AA}$ thick AZO films, the multi-layer showed a high optical transmittance in the visible range of the spectrum. The electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. A high quality transparent electrode, having a resistance as low as $6\;W/{\square}$ and a high optical transmittance of 87% at 550 nm, was obtained by controlling Ag deposition parameters.