• 제목/요약/키워드: substrate resistance

검색결과 1,387건 처리시간 0.029초

측온저항체 온도센서용 백금 박막의 형성에 관한 연구 (The Study on Fabrication of Platinum Thin Films for RTD)

  • 노상수;최영규;정귀상
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1996년도 추계학술대회 논문집 학회본부
    • /
    • pp.242-244
    • /
    • 1996
  • Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The Resistivity and Sheet Resistivity were decreased with increasing the temperature of substrate and the annealing time at $1000^{\circ}C$. At substrate temperature $300^{\circ}C$, input power 7(w/$cm^2$), working vacuum 5mtorr and annealing conditions $1000^{\circ}C$, 240min we obtained $10.65{\mu}{\Omega}{\cdot}cm$, Resistivity of Pt thin film and $3000{\sim}3900ppm/^{\circ}C$, TCR(temperature coefficient of resistance) closed to the bulk value.

  • PDF

마크로라이드-포스포트란스페라제 K의 기질 특이성 (Substrate Specificity of the Macrolide-Phosphotransferase K)

  • 김숙경;오태권;백문창;김병각;최응칠
    • 약학회지
    • /
    • 제41권4호
    • /
    • pp.530-532
    • /
    • 1997
  • The MICs of various macrolide, lincosamide and streptogramin B antibiotics against highly erythromycin-resistant Escherichia coli 209K strain were evaluated. E. coli 209K showed high MICs against 14-membered macrolides and the relatively weaker resistance to 16-membered macrolides, lincosamides and streptogramin B. The macrolide-phosphotransferase K from E. coli 209K showed greater substrate specificity to the 14-membered macrolide antibiotics than to the 16-membered macrolide antibiotics, lincosamide and streptogramin B. Therefore, it was considered that the high resistance was due to the macrolide-phosphotransferase K.

  • PDF

Embedded Resistor 적용을 위한 Organic 기판 위에 균일한 두께의 형상을 갖는 저항체의 제조공정과 편차에 대한 조사 (Investigation on Fabrication Process and Tolerance of Resistance Body with A Uniform Thickness Shape on Organic Substrate for Application of Embedded Resistor)

  • 박화선
    • 대한전자공학회논문지SD
    • /
    • 제45권4호
    • /
    • pp.72-77
    • /
    • 2008
  • 본 논문에서는 Embedded resistor 적용을 위한 오개닉 기판 위에 캐버티(Cavity) 공정에 의해서 형성된 균일한 두께를 갖는 저항체의 제조 방법과 저항편차에 대해서 조사했다. 기존의 스크린 프린팅에 의해서 발생하는 PCB의 위치에 따른 저항값의 편차를 개선하기 위하여 캐버티 공정을 소개했다. 원하는 모양과 부피를 갖는 저항은 스크린 프린팅과 페이스트를 이용하여 cavity 공정에 의해 정확하게 형성되어 졌다. 이 방법은 PCB의 생산 공정시간을 줄일 수 있고, 스크린 프린팅의 정밀도에 의한 큰 영향 없이 빠르게 공정 조건을 배치할 수 있으므로써 생산량을 개선시킬 수 있다.

열적 안정한 압력센서 제작을 위한 보론(B) 이온 주입 n형 Si 에피 전극 연구 (A Study of B-implanted n Type Si Epi Resistor for the Fabrication of Thermal Stable Pressure Sensor)

  • 최경근;강문식
    • 센서학회지
    • /
    • 제27권1호
    • /
    • pp.40-46
    • /
    • 2018
  • In this paper, we focus on optimization of a boron ($^{11}B$)-implanted n type Si epi substrate for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $125^{\circ}C$. The $^{11}B$-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from $900^{\circ}C$ to $1000^{\circ}C$ for the $p^+$ contact with implantation at dose of $1E16/cm^2$, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of $1126.7{\pm}30.3$ (ppm/K) was obtained for the $p^-$ resistor-COB package chips contained $p^+$ contact with the implantation of $5E14/cm^2$. This shows the potential of the $^{11}B$-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..

Ink-Jet 3D Printability of Ceramic Ink with Contact Angle Control

  • Park, Jae-Hyeon;Lee, Ji-Hyeon;Kim, Deug Joong;Hwang, Kwang-Taek;Kim, Jin-Ho;Han, Kyu-Sung
    • 한국세라믹학회지
    • /
    • 제56권5호
    • /
    • pp.461-467
    • /
    • 2019
  • Ink-jet printing technology, which utilizes a digitalized design to print fine ink directly on a substrate, has been of interest in various industries due to its high efficiency and adaptability to various materials. Recently, active attempts have been made to apply ceramic materials having excellent heat resistance, light resistance, and chemical resistance to the ink-jet printing process. In this study, ceramic ink was synthesized by combining ceramic pigments with UV curable polymer. 3D printability at various contact angles between ceramic ink and substrate was analyzed in detail. Rheological properties of the synthesized ceramic ink were optimized to meet the requirements of the ink-jet printing process, and the contact angle of UV curable ceramic ink was controlled through surface treatment of the substrate. The potential for additive manufacturing of ceramic material using ink-jet printing was investigated by analyzing the effect of contact angle control on ceramic ink droplets and their 3D printability.

Effect of FTO coated on stainless steel bipolar plate for PEM fuel cells

  • 박지훈;장원영;변동진;이중기
    • 한국재료학회:학술대회논문집
    • /
    • 한국재료학회 2009년도 춘계학술발표대회
    • /
    • pp.55.2-55.2
    • /
    • 2009
  • A polymer electrolyte membrane (PEM) fuel cell has been getting large interest as a typical issue in useful applications. The PEMFC is composed of a membrane, catalyst and the bipolar plate. SnOx:F films on SUS316 stainless steel were prepared as a function of substrate with using electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) in order to achieve the corrosion-resistant and low contact resistance bipolar plates for PEM fuel cells. The SnOx:F films coated on SUS316 substrate at surface plasma treatment for excellent stability, before/after heat treatment for good crystalline structure and microwave power for were characterized by X-ray diffraction (XRD), auger electron microscopy (AES) and field emission-scanning electron microscopy (FE-SEM). The SnOx:F film coated on SUS316 substrate with various process parameters were able to observe optimum interfacial contact resistance (ICR) and corrosion resistance. It can be concluded that fluorine-doping content plays an important function in electrical property and characteristic of corrosion-protective film.

  • PDF

Deep Submicron MOSFET 기판회로 파라미터의 바이어스 및 게이트 길이 종속 데이터 추출 (Bias and Gate-Length Dependent Data Extraction of Substrate Circuit Parameters for Deep Submicron MOSFETs)

  • 이용택;최문성;구자남;이성현
    • 대한전자공학회논문지SD
    • /
    • 제41권12호
    • /
    • pp.27-34
    • /
    • 2004
  • 최근 실리콘 미세공정의 발달로 상용화된 0.2$\mum$ 게이트길이 이하의 deep submicron MOSFET 출력특성을 정확히 모델링하기 위해서는 RF 기판 회로 연구가 필수적이다. 먼저 본 논문에서는 기판 캐패시던스와 기판 저항이 병렬로 연결된 모델과 기판 저항만을 사용한 단순 모델들에 적합한 직접 추출 방법을 각각 개발하였다. 이 추출방법들을 0.15$\mum$ CMOS 소자에 적용한 결과 단순 모델보다 RC 병렬 기판모델이 측정된 $Y_{22}$-parameter에 30GHz까지 더 잘 일치하는 것을 확인하였으며, 이는 RC 병렬 기판모델 및 직접추출방법의 RF 정확도를 증명한다. 이러한 RC 병렬 기판모델을 사용하여 게이트 길이를 0.11에서 0.5$\mum$까지 변화시키고 드레인 전압을 0에서 1.2V까지 증가시키면서 기판 모델 파라미터들의 bias 종속 특성과 게이트 길이 종속 특성을 새롭게 추출하였다. 이러한 새로운 추출 결과는 scalable한 RF 비선형 기판 모델 개발에 유용하게 사용될 것이다.

플라즈마 표면 처리에 의한 ITO 박막 제작 특성 (Characteristic of ITO thin film with plasma surface treatment)

  • 김상모;손인환;박상준;김경환
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
    • /
    • pp.404-405
    • /
    • 2007
  • Tin-doped indium thin film is outstanding material among transparent Conductive Oxide (TCO) materials. ITO thin films show a low electrical resistance(<$10^{-4}\;[{\Omega}{\cdot}m]$) and high transmittance(>80%) in the visible range. ITO thin films usually have been deposited on the glass substrate. In order to apply flexible display, the substrate should have the ability to bend and be deposited without substrate heat. Also properties of ITO thin film depend on what kind of substrate. In this study, we prepared ITO thin film on the polycarbonate (PC) substrate by using Facing Target Sputtering (FTS) system. Before deposition of ITO thin film, PC substrate took plasma surface treatment. The electrical and surface properties of as-deposited thin films were investigated by Hall Effect measurement, UV/VIS spectrometer and the surface property of substrate is investigated by Contact angle measurement.

  • PDF

TiO2 함량에 따르는 무전해 Ni-P-TiO2 복합도금층 특성 연구 (Characterization of the Morphology and Corrosion Resistance in Electroless Ni-P-TiO2 Composite Coating Prepared by TiO2 Contents)

  • 변영민;김호영;이재웅;황환일
    • 한국표면공학회지
    • /
    • 제52권4호
    • /
    • pp.187-193
    • /
    • 2019
  • Electroless Ni-P coatings are widely used in the chemical, mechanical, and electronic industries because of their excellent wear and abrasion resistance. In this study, the effect of $TiO_2$ particles of composite coating was investigated. To improve the corrosion resistance, electroless $Ni-P-TiO_2$composite coating was studied by varying the $TiO_2$ content. The morphology and phase structure of $Ni-P-TiO_2$ composite coatings were analyzed by scanning electron microscopy(SEM), X-ray diffractometry(XRD) and X-ray photoelectron spectroscopy(XPS). The result showed that $Ni-P-TiO_2$composite coating is composed of Ni, P, Ti and O. It exhibits an amorphous structure, high hardness and good corrosion resistance to the substrate. $Ni-P-TiO_2$ composite coatings have higher open circuit potential than that of the substrate, which obtained at $TiO_2$ content of 5.0 g/L optimal integrated properties.

셀 폭에 따른 염료 감응형 태양전지의 표면저항 효과 (A surface resistance effect on the fabrication of Dye-sensitized Solar Cell with various widths)

  • 최진영;김용철;박성준;성열문;김휘영;김희제
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 한국신재생에너지학회 2006년도 춘계학술대회
    • /
    • pp.187-191
    • /
    • 2006
  • Sputter deposition followed by surface treatment was studied using reactive RF plasma as a method for preparing titanium oxide $(TiO_2)$ films on the FTO $(SnO_2: F)$ substrate for dye-sensitized solar cells (DSCs). Anatase structure $TiO_2$ films deposited by reactive RF magnetron sputtering under the conditions of $Ar/O_2(5%)$ mixtures, RF power of 600W and substrate temperature of $400^{\circ}C$ were surface-treated by inductive coupled plasma (ICP) with $Ar/O_2$ mixtures at substrate temperature of $400^{\circ}C$, and thus the films were applied to the DSCs. We have chosen a solar cell width as a variable of a large-scaled DSCs and confirmed electric characteristics of an individual cell. As a result, the higher the internal resistance of DSC becomes, the wider the width gets. Internal resistance makes it difficult to collect photoelectron generated from dye. Ultimately up sizing DSC causes the increase of internal resistance and then has a bad effect on the cell characteristics.

  • PDF