• 한국정보통신학회논문지
• /
• 제16권6호
• /
• pp.1141-1147
• /
• 2012

본 논문에서는 Debye 분산 특성을 가지는 복제 방지용 PUF를 설계하기 위한 전자계 해석 방안을 고려하였다. 공기층과 유전체 기판 위에 형성된 분산매질(Si)로 구성된 1차원 모델 내에 전파하는 펄스를 모형하기 위해 FDTD법을 이용하였다. 불연속 경계면에 도달한 펄스는 일부 반사되고 일부는 투과되어 빠르게 감쇠되는 것으로 나타났다. 그 결과 FDTD법에 의한 유전체 기판을 고려한 Debye 분산특성을 가지는 1차원 복제방지용 PUF 모델링에 적용 가능한 것을 확인하였다.

• 한국전기전자재료학회논문지
• /
• 제16권12S호
• /
• pp.1157-1164
• /
• 2003

This paper shows the results of atomistic modeling for the interaction between spherical nano abrasive and substrate in chemical mechanical polishing processes. Atomistic modeling was achieved from 2-dimensional molecular dynamics simulations using the Lennard-Jones 12-6 potentials. The abrasive dynamics was modeled by three cases, such as slipping, rolling, and rotating. Simulation results showed that the different dynamics of the abrasive results the different features of surfaces. This model can be extended to investigate the 3-dimensional chemical mechanical polishing processes.

• 전자공학회논문지A
• /
• 제33A권12호
• /
• pp.33-38
• /
• 1996

In this paper, we modeled the complex dielectric constant and analyzed the projpagation characteristics of a FR-4 composite substrate with different compositions. From the wideband dielectric modeling and the propagation loss analysis of FR-4 composites that consists of FR-4 resin and E-glass reinforcement,we have found that the propagation loss and velocity increase with the volume fraction of FR-4 resin above 1 GHz. These results are helpful in determining to deisgn optimum substrate composition ratio and cross-sectional geometry of high-speed and high-density transmission line.

• Journal of Microbiology and Biotechnology
• /
• 제24권7호
• /
• pp.954-958
• /
• 2014

Succinic semialdehyde dehydrogenase (SSADH) catalyzes the oxidation of succinic semialdehyde (SSA) into succinic acid in the final step of ${\gamma}$-aminobutyric acid degradation. Here, we characterized Bacillus subtilis SSADH (BsSSADH) regarding its cofactor discrimination and substrate inhibition. BsSSADH showed similar values of the catalytic efficiency ($k_{ca}t/K_m$) in both $NAD^+$ and $NADP^+$ as cofactors, and exhibited complete uncompetitive substrate inhibition at higher SSA concentrations. Further analyses of the sequence alignment and homology modeling indicated that the residues of catalytic and cofactor-binding sites in other SSADHs were highly conserved in BsSSADH.

• 한국산업융합학회 논문집
• /
• 제25권6_1호
• /
• pp.941-952
• /
• 2022

In this study, additive manufacturing technology was applied to restore a planner miller that was unusable due to aging. The drive spur gear of the planner miller was inoperable due to many defects in the teeth. The shape of the defective gear teeth was restored by deposition of the defective teeth using the DED method. However, as the location of the deposition head and the location of the set origin became farther, the deposition shape was different from the modeling shape. Nonetheless, since the modeling of the deposition part was designed to be larger than the tooth shape of the original gear, it was possible to completely restore all gear teeth through post-processing. The arrangement interval of the flow lines of the deposition part was narrower than that of the substrate. The hardness of the substrate was 172 HV, and that of the deposition part was 345 HV, which was twice as high as that of the substrate.

• 반도체디스플레이기술학회지
• /
• 제5권4호
• /
• pp.35-40
• /
• 2006

This paper shows that the effect of exposing on the top area and a solution which using a water circulation system. Semiconductor substrate stage is made from Aluminum and is repeated the sequence of exposing (150), turning OFF shutter, taking 30 sec. interval at the top area of stage. So the temperature of substrate temperature rises continuously. On this, we made a waterway at the inner part of the substrate stage and operated a water circulation system. We measured the temperature of a substrate stage surface with a thermocouple attached to the substrate stage. To analyze the top area's temperature, we used Analysis Program ANSYS for analysis and 3D CAD program Solid-Works for modeling.

• 한국표면공학회지
• /
• 제44권1호
• /
• pp.26-31
• /
• 2011

Numerical modeling is used to investigate the perturbation of a single Langmuir probe (0.2 mm diameter shielded with 6 mm insulator) inserted along the center axis of a cylindrical inductively coupled plasma chamber filled with Ar at 10 mTorr and driven by 13 MHz. The probe was driven by a sine wave. When the probe tip is close to a substrate by 24.5 mm, the probe characteristics was unperturbed. At 10 mm above the substrate, the time averaged electric potential distribution around the tip was severly distorted making a normal probe analysis impossible.

• 반도체디스플레이기술학회지
• /
• 제19권4호
• /
• pp.46-50
• /
• 2020

In this research, the attractive force of Coulomb type electrostatic chuck(ESC), which consisted of alumina dielectric, on glass substrate was studied by using the finite element analysis. The attractive force is caused by the high electrical resistance which occurs in contact region between glass substrate and dielectric layer. This research tries the simple geometrical modeling of ESC and glass substrate with air gap. The influences of the applied voltage, and air gap are investigated. When alumina dielectric with 1014 Ω·cm, 1.5 kV voltage, and 0.01 mm air gap were applied, electrostatic force in this work reached to 4 gf/㎠. This results show that the modeling of air gap is essential to derive the attractive force of the ESC.

• 대한전자공학회논문지SD
• /
• 제44권4호
• /
• pp.32-42
• /
• 2007

[ $0.35{\mu}m$ ]twin-well non-epitaxial CMOS 공정에서의 substrate noise에 의한 아날로그 회로의 성능 저하를 예측하기 위하여 substrate 저항을 모델링하였다. Substrate 저항 모델 방정식은 P+ guard-ring isolation에 적용되어 측정값과 일치함을 확인하였다. Substrate 저항을 네 가지 형태로 구분하고 각각에 대하여 semi-empirical 모델 방정식을 확립하여, 측정값과 비교하여 rms 오차가 10% 미만이 되었다. 이 substrate 저항 모델을 guard-ring에 의한 isolation 구조에 적용하기 위하여 모델 방정식과 ADS(Advanced Design System) 회로 시뮬레이션에 의한 결과와 Network Analyzer의 측정 결과를 비교하였고, 비교적 잘 일치함을 확인하였다.

• 전자공학회논문지
• /
• 제49권12호
• /
• pp.173-178
• /
• 2012

RF 직접 추출 방법을 통해 얻은 정확한 MOSFET 기판 파라미터를 이용하여 기판저항만을 가진 BSIM4 모델은 스케일링 부정확성 때문에 넓은 영역의 게이트 길이에 적용하기에는 물리적으로 맞지 않다는 것이 증명됐다. BSIM4의 비물리적인 문제점을 제거하기 위해서 추가적인 유전체 기판 캐패시터를 가진 수정된 BSIM4 모델이 사용되었고, 이 모델의 물리적 타당성은 우수한 게이트 길이 scalability를 관찰함으로써 증명되었다.