• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.809-812
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• 2005

In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance $Y_{22}$ can be well modeled up to 40 GHz. From the 3-port simulation and modeling results, it was verified that the proposed equivalent circuit and parameter extraction method was more accurate than the single substrate resistance model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.221-225
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• 2001

In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.172-178
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• 2001

Using dislocation pileup theory, the near surface crack initiation life was calculated. The crack initiation life calculted in the previous study is not a real life strictly and just for the cracking in substrate. In this study, two life equations which can be applied for each near-surface and substrate were used for a comparative study. The downward tendency of life at near surface and substrate was similar and the crack initiation life at near-surface was much shorter than the life in substrate. The improvement of the crack initiation life equations which were proposed by W. Cheng was discussed.

• Journal of the Korean Magnetics Society
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• v.13 no.6
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• pp.243-245
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• 2003

The anomalous angular modulation of magnetoresistance in Co/Cu multilayers is explained assuming substrate-induced magnetic anisotropy. The magnetic parameters of Co/Cu multilayers is determined using angular modulation of magnetoresistance and theoretical model including substrate-induced anisotropy. This mechanism introduces a new possible way of modulating the giant magnetoresistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.221-225
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• 2001

In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate

• Applied Chemistry for Engineering
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• v.10 no.4
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• pp.502-508
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• 1999

We prepared non-porous membrane on the $Al_2O_3$ substrate with the different pore by the size by the plasma polymerization of $CHF_3$. We studied the permeability characteristics of membrane by Ar treatment and the effect of substrate pore size on gas permeation mechanism. The selectivity was increased with Ar plasma treatment time and rf-power near the substrate to the cathode while the permeability was decreased. It was observed that the solution-diffusion model would be applied to non-porous layers while it is applied Knudsen diffusion model to the substrate. From the experimental observation, it could be concluded that the pore size of $Al_2O_3$ membrane influenced on the permeability and the selectivity.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.10
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• pp.27-37
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• 2021

The use of additive manufacturing processes for the repair and remanufacturing of mechanical parts has attracted considerable attention because of strict environmental regulations. Directed energy deposition (DED) is widely used to retrofit mechanical parts. In this study, finite element analyses (FEAs) were performed to investigate the influence of the substrate phase and inclination angle on the heat transfer characteristics in the vicinity of Hastelloy X regions deposited via DED. FE models that consider the bead size and hatch distance were designed. A volumetric heat source model with a Gaussian distribution in a plane was adopted as the heat flux model for DED. The substrate and the deposited powder were S45C structural steel and Hastelloy X, respectively. Temperature-dependent thermal properties were considered while performing the FEAs. The effects of the substrate phase and inclination angle on the temperature distributions and depth of the heat-affected zone (HAZ) in the vicinity of the deposited regions were examined. Furthermore, the influence of deposition paths on depths of the HAZ were investigated. The results of the analyses were used to determine the suitable phase and inclination angle of the substrate as well as the appropriate deposition path.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.675-678
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• 2005

An improved BSIM3v3 RF Macro model with RC parallel substrate circuit has been developed to simulate RF characteristics of the output admittance in MOSFET accurately. This improved model shows better agreements with measured $Y_{22}-parameter$ up to 10 GHz than conventional one with a single substrate resistance, verifying the accuracy of the improved one.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.1-7
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• 1985

In this paper, a more improved threshold voltage model dependent on drain voltage and substrate bias for short - channel enhancement - mode IGFET is presented. Especially, compared with the several recently published models, the error is sufficiently reduced with the precise analysis on the correction factor for short-channel effect and the calculated values using this model are also agreed well with the experimental data about 1$\mu$m - channel length device.

• Food Science and Biotechnology
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• v.17 no.4
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• pp.805-808
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• 2008

Ginsenosides are responsible for the pharmacological and biological activities of ginseng. In this study, ginsenoside Rh1 and compound K were isolated and purified from fermented ginseng substrate and their anti-allergic effects were assessed in compound 48/80-induced anaphylactic shock model. The fermented ginseng substrate was extracted by methanol and ginsenoside Rh1 and compound K were efficiently purified by preparative high performance liquid chromatography (prep HPLC). Their quality and quantity were analyzed by liquid chromatography-mass spectrometer (LC-MS) and HPLC. Ginsenoside Rh1 showed better anti-allergic effects than compound K in compound 48/80-induced anaphylactic shock model. This study suggested that fermented ginseng extracts with enriched Rh1 may be utilized as a potential biomaterial of functional food for the alleviation of allergic symptoms.