• 대한안전경영과학회지
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• 제15권1호
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• pp.109-120
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• 2013

As information-oriented industry has been developed and electronic devices has come to be smaller, lighter, multifunctional, and high speed, the components used to the devices need to be much high density and should have find pattern due to high integration. Also, diverse reliability problems happen as user environment is getting harsher. For this reasons, establishing and securing products and components reliability comes to key factor in company's competitiveness. It makes accelerated test important to check product reliability in fast way. Out of fine pattern failure modes, failure of Electrochemical Migration(ECM) is kind of degradation of insulation resistance by electro-chemical reaction, which it comes to be accelerated by biased voltage in high temperature and high humidity environment. In this thesis, the accelerated life test for failure caused by ECM on fine pattern substrate, $20/20{\mu}m$ pattern width/space applied by Semi Additive Process, was performed, and through this test, the investigation of failure mechanism and the life-time prediction evaluation under actual user environment was implemented. The result of accelerated test has been compared and estimated with life distribution and life stress relatively by using Minitab software and its acceleration rate was also tested. Through estimated weibull distribution, B10 life has been estimated under 95% confidence level of failure data happened in each test conditions. And the life in actual usage environment has been predicted by using generalized Eyring model considering temperature and humidity by developing Arrhenius reaction rate theory, and acceleration factors by test conditions have been calculated.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.284-284
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• 2006

Electrospray deposited films of poly(vinylidene fluoride) were prepared with various conditions. A model has been developed, which provides the state of the electrosprayed droplet at impact. With a combination of the experimental films and the model calculations, it can be shown that growth rate, the increase of the sprayed solution on the substrate per second, defines the film morphology in electrospray deposition. Growth rate indicates which factors play the main role in the film formation process. The most important factors are liquid flow, surface tension and shear rate. The model can calculate the shear rate and it is shown that PVDF, and most likely polymers in general, has a large range of growth rates, where the morphology only depends on the shear rate of the depositing droplet. This method can also be used to describe electrospray deposition of other compounds.

• 전자공학회논문지A
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• 제31A권1호
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• pp.39-47
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• 1994

The drain current reduction effect due to the side-gating phenomena resulted from interaction between the neighbor gates is lead to degradation of circuit performance. In this paper, these effect were modelized for circuit simulation with the shift of threshold voltage resulting from negative charge formation and the analysis of substrate leakage current resulting trapping effect. To remove dificiencies of the conventional three terminal structure, these model were implemented in SPICE with the four terminal structure, and then the constructed environment enables the simulation of circuit performance degradation resulted from side-gating effect. The validity of implemented model is proved by comparisoin with experiment data.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2000년도 춘계학술대회 논문집
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• pp.743-746
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• 2000

The removal of contaminants of silicon wafers has been investigated by various methods. Laser cleaning is the new dry cleaning technique to replace wafer wet cleaning in the near future. A dry laser cleaning uses inert gas jet to remove contaminant particles lifted off by the action of a KrF excimer laser. A laser cleaning model is developed to simulate the cleaning process and analyze the influence of contaminant particles and experimental parameters on laser cleaning efficiency. The model demonstrates that various types of submicrometer-sized particles from the front sides of silicon wafer can be efficiently removed by laser cleaning. The laser cleaning is explained by a particle adhesion model. including van der Waals forces and hydrogen bonding, and a particle removal model involving rapid thermal expansion of the substrate due to the thermoelastic effect. In addition, the experiment of wafer laser cleaning using KrF excimer laser was conducted to remove various contaminant particles.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.647-653
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• 2011

In this study, a method to measure the thickness of thin film by EDS (energy dispersive spectroscopy) is suggested. We have developed a model which calculates the thickness of thin film from the characteristic x-ray intensity ratio of the elements in thin film and substrate by considering incident electron beam energy, x-ray generation curve, backscattering and absorption of x-ray, take-off angle of x-ray and tilt angle of the sample. We obtained the relation curve between the film thickness measured experimentally and the x-ray intensity ratio of elements. The film thicknesses calculated from the model agrees quite well with those measured experimentally. Therefore, the thin film thickness can be measured rapidly and accurately by using the model developed in this study and the x-ray intensity ratio obtained in EDS analysis.

• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.414-422
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• 2005

This paper shows the results of atomistic modeling for the Interaction between spherical nano abrasive and substrate In chemical mechanical polishing processes. Atomistic modeling was achieved from 2-dimensional molecular dynamics simulations using the Lennard-jones 12-6 potentials. We proposed and investigated three mechanical models: (1) Constant Force Model; (2) Constant Depth Model, (3) Variable Force Model, and three chemical models, such as (1) Chemically Reactive Surface Model, (2) Chemically Passivating Surface Model, and (3) Chemically Passivating-reactive Surface Model. From the results obtained from classical molecular dynamics simulations for these models, we concluded that atomistic chemical mechanical polishing model based on both Variable Force Model and Chemically Passivating-reactive Surface Model were the most suitable for realistic simulation of chemical mechanical polishing in the atomic scale. The proposed model can be extended to investigate the 3-dimensional chemical mechanical polishing processes in the atomic scale.

• Structural Engineering and Mechanics
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• 제63권3호
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• pp.361-370
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• 2017

Through the use of finite element analysis and acoustic emission techniques we have evaluated the interfacial failure of a carbon fiber reinforced polymer (CFRP) repair patch on a notched aluminum substrate. The repair of cracks is a very common and widely used practice in the aeronautics field to extend the life of cracked sheet metal panels. The process consists of adhesively bonding a patch that encompasses the notched site to provide additional strength, thereby increasing life and avoiding costly replacements. The mechanical strength of the bonded joint relies mainly on the bonding of the adhesive to the plate and patch stiffness. Stress concentrations at crack tips promote disbonding of the composite patch from the substrate, consequently reducing the bonded area, which makes this a critical aspect of repair effectiveness. In this paper we examine patch disbonding by calculating the influence of notch tip stress on disbond area and verify computational results with acoustic emission (AE) measurements obtained from specimens subjected to uniaxial tension. The FE results showed that disbonding first occurs between the patch and the substrate close to free edge of the patch followed by failure around the tip of the notch, both highest stress regions. Experimental results revealed that cement adhesion at the aluminum interface was the limiting factor in patch performance. The patch did not appear to strengthen the aluminum substrate when measured by stress-strain due to early stage disbonding. Analysis of the AE signals provided insight to the disbond locations and progression at the metal-adhesive interface. Crack growth from the notch in the aluminum was not observed until the stress reached a critical level, an instant before final fracture, which was unaffected by the patch due to early stage disbonding. The FE model was further utilized to study the effects of patch fiber orientation and increased adhesive strength. The model revealed that the effectiveness of patch repairs is strongly dependent upon the combined interactions of adhesive bond strength and fiber orientation.

• 유기물자원화
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• 제21권1호
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• pp.62-68
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• 2013

회분식 실험을 통해 매몰지 내 유기물의 농도가 분해 속도에 미치는 영향을 평가하였다. 기질은 돈 및 우육을 이용하였으며 기질의 농도는 2, 4, 6, 8 및 10 g VS/L로 선정하였다. 기질의 농도가 2 g VS/L 일 경우에 돈 및 우육의 메탄 발생율 각각 46.3 및 48.4 ml CH4/g VS.d 로 가장 높게 나타났으며 기질의 농도가 증가할수록 메탄 발생율은 감소하였다. 비선형 저해 방정식을 이용하여 평가된 저해 상수 값은 돈육의 경우, n 및 m은 각각 4.9 및 0.6으로 나타났으며 우육은 각각 1.1 및 0.4로 나타났다(n: 최대 메탄 발생율 저해 상수, m: 최종 메탄 수율 저해 상수). 기질의 농도가 증가할수록 메탄 발생율은 민감하게 반응하였으나 최종 메탄 수율은 상대적으로 둔감하게 반응하였다. 또한, 돈 및 우육의 n과 m 값 관계를 통해 기질 농도에 따른 저해 특성은 반경쟁적 저해 특성으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• 한국균학회지
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• 제27권4호통권91호
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• pp.304-311
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• 1999

영지버섯의 세포외 다당발효중 동력학적 특성을 기질(포도당, 전분), 기질농도$(1{\sim}7%)$ 및 계대배양(3회)의 함수로서 조사하였다. 영지버섯 균사체 증식은 logistic 모델이 Monod 모델 및 two- thirds power 모델과 비교하여 실험값에 잘 일치하였고, 기질 및 생성물은 Luedeking-Pirt 식에 의하여 잘 설명되었다. 또 다당 생성의 발효 기작은 증식연동형과 비증식 연동형이 함께 존재하는 혼합형이었으나 기질에 상관없이 비증식연동형 기작이 더 중요하였다. Glucose는 농도 증가에 따라 다당생성 및 기질소비의 기작이 증식연동형이 감소하고 비증식연동형이 증가하는 경향을 보였다. 그러나 starch를 사용하였을 경우는 glucose와는 달리, 기질소비의 증식연동형과 비증식연동형 기작이 모두 증가하여 높은 기질 이용성을 보였다. 아울러 starch배지에서는 glucose배지에서 보다 비증식속도의 증가와 계대배양시의 안정성을 보였다. 따라서 영지버섯의 배양시 starch배지는 비증식연동형에 의한 균체 생육 및 다당생성의 생합성 촉진에 의해 이들 생산성 및 계대배양시의 안정성을 증가시키는 것으로 생각되었다 최대의 균사체 생육 및 다당 생산은 각각 9.463 및 10.410 g/l로, 7% starch을 함유한 배지에서 $30^{\circ}C$로 7일간 진탕배양하였을 때 얻어졌다.