• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.3
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• pp.182-188
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• 2001

A solenoid-type MEMS inductor with a quality factor over 10 at 2 GHz has been developed using an electroplating technique. The integrated spiral inductor has a low Q factor due to substrate loss and skin effects. It also occupies a large area compared to the solenoid-type inductor. The direction of flux of the solenoid-type inductor is parallel to the substrate, which can lower the substrate loss and other interference with integrated passive components. To estimate the characteristics of the proposed inductor over a high frequency range, the 3D FEM (Finite Element Method) simulation is used by using the HFSS at the Ansoft corporation. The electroplated solenoid-type inductor is fabricated on a glass substrate step by step by using photolithography and copper electroplating. The fabrication process to improve the quality factor of the inductor is also developed. The achieved inductance varies within a range from 0.5 nH to 2.8 nH, and the maximum Q factor is over 10.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1879-1881
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• 1999

(Ba,Sr)$TiO_3$[BST] thin films were fabricated on Pt/Ti/$SiO_2$/Si substrate by RF sputtering. We investigated the effects of substrate temperature on the structural and dielectric properties of BST thin films. Increasing the substrate temperature, barium multi titanate phases were decreased, and BST (100), (200) peaks were increased. The relative dielectric constant and dielectric loss of the BST thin films at the substrate temperature of $500^{\circ}C$ were 300 and 0.018, respectively at l[kHz]. In all films, the dielectric constants decreased. Dielectric losses increased as increasing the frequency. The switching voltage was 5V of the BST thin films at the substrate temperature of $500^{\circ}C$.

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.89-89
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• 2009

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.8
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• pp.680-687
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• 2009

In this paper, we propose a substrate integrated waveguide(SIW) power divider to yield excellent broadband isolation performance. In order to achieve high broadband isolation, a two stage Wilkinson power divider is employed in SIW. The measurement results show the insertion loss($S_{21}$, $S_{31}$ to be $4.0{\pm}0.5$ dB) and input return loss($S_{11}$ of 10 dB) from 13.12 GHz to 16.14 GHz. Moreover, the results show that the output return loss and isolation between output ports are larger than 10 dB between 10.37 GHz and 17.64 GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.889-895
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• 2002

Wafer level packaging is gain mote momentum as a low cost, high performance solution for RF-MEMS devices. In this work, the flip-chip method was used for the wafer level packaging of RF-MEMS devices on the quartz substrate with low losses. For analyzing the EM (electromagnetic) characteristic of proposed packaging structure, we got the 3D structure simulation using FEM (finite element method). The electric field distribution of CPW and hole feed-through at 3 GHz were concentrated on the hole and the CPW. The reflection loss of the package was totally below 23 dB and the insertion loss that presents the signal transmission characteristic is above 0.06 dB. The 4-inch Pyrex glass was used as a package substrate and it was punched with air-blast with 250${\mu}{\textrm}{m}$ diameter holes. We made the vortical feed-throughs to reduce the electric path length and parasitic parameters. The vias were filled with plating gold. The package substrate was bonded with the silicon substrate with the B-stage epoxy. The loss of the overall package structure was tested with a network analyzer and was within 0.05 dB. This structure can be used for wafer level packaging of not only the RF-MEMS devices but also the MEMS devices.

• Korean Journal of Materials Research
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• v.19 no.12
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• pp.649-656
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• 2009

Inorganic oxide colloids dispersed in alcohol were applied to a stainless steel substrate to produce oxide coatings for the purpose of minimizing emissive thermal transfer. The microstructure, roughness, infrared emissive energy, and surface heat loss of the coated substrate were observed with a variation of the nano oxide sol and coating method. It was found that the indium tin oxide, antimony tin oxide, magnesium oxide, silica, titania sol coatings may reduce surface heat loss of the stainless steel at 300${\circ}C$. It was possible to suppress thermal oxidation of the substrate with the oxide sol coatings during an accelerated thermal durability test at 600${\circ}C$. The silica sol coating was most effective to suppress thermal oxidation at 600${\circ}C$, so that it is useful to prevent the increase of radiative surface heat loss as a heating element. Therefore, the inorganic oxide sol coatings may be applied to improve energy efficiency of the substrate as the heating element.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.1007-1013
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• 1998

In this paper, the dielectric properties of fabricated Polyvinylidene fluoride(PVDF, $PVF_2$) thin film with substrate temperature from 30 to at vapor deposition. The dielectric properties of PVDF thin film had been studied in the frequency range from 10Hz to 4MHz at measuring temperature between 20 and $100^{/circ}C$. The anomalous increasing in dielectric constant and dielectric loss at low frequencies and high temperature was described for PVDF thin film containing ion impurities. In particularly, ion mobility of fabricated PVDF thin film at substrate temperature at $30^{/circ}C$ decrease from $2\times10^{-5}\;to\;3.07$\times10^{-7}cm^2/V.s$ On the other hand, ion density increase abruptly from 1.49\times$$10^{13}$ to $1.5\times$10^{16}$cm^{-3}$ In spite of decreasing of ion mobility, dielectric constants and dielectric loss for PVDF thin film increase rapidly with decreasing frequency and high temperature. It was concluded that the dielectric constants and dielectric loss was related to ion density than to ion mobility at low frequency and high temperatures.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.12
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• pp.1292-1299
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• 2003

In this paper, we fabricated new GaAs-based dielectric-supported air gapped microstriplines(DAMLs) using the surface MEMS and the LPF for Ka-band using the fabricated DAMLs. We elevated the signal lines from the substrate, in order to reduce the substrate dielectric loss and obtain low losses at millimeter-wave frequency band with wide impedance range. We fabricated LPF with DAMLs for Ka-band. Due to reducing the dielectric loss of DAMLs, the insertion loss of LPF can be reduced. Miniature is essential to integrate LPF with active devices, so that we fabricated LPF with the slot on the ground to reduce the size of the LPF. We compared a characteristic to LPF with the slot and LPF without the slot.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.2
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• pp.95-103
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• 2019

In this paper, we present a microstrip-to-substrate integrated waveguide(SIW) transition and microstrip-to-hollow SIW(HSIW) transition for Ku-band satellite communication systems. For the complete utilization of the HSIW, a structure filled with air instead of a dielectric material, a microstrip-to-HSIW transition is designed, fabricated, and compared with a microstrip-to-SIW transition. A back-to-back microstrip-to-SIW transition is measured in the range 12~18 GHz; it exhibits a return loss ${\geq}20dB$ and an insertion loss of $1.5{\pm}0.2dB$. In contrast, a back-to-back microstrip-to-HSIW transition exhibits a return loss of at least 15 dB and an insertion loss of $0.55{\pm}0.2dB$ in the same frequency range.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.4
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• pp.29-34
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• 2023

A clear and efficient design method for a microstrip-to-waveguide inline transition, which is based on an analytical model, is presented. The transition consists of three parts: a microstrip-to-SIW transition, a dielectric-loaded waveguide with substrate-height, and a stepped-height waveguide. The shape of the transitional structure is formed for impedance matching. Two equivalent type0s of dielectric-loaded transitional structures are proposed. The design method is applicable to any size of the waveguide, but a design method of two Ka-band transitions is demonstrated. The proposed transitions, in a back-to-back configuration, have less than 1.2 dB insertion loss and more than 15 dB return loss from 29.8 GHz to 38.2 GHz.