• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.74-77
• /
• 2004

[ $HfO_2$ ] dielectric layers were grown on the p-type Si(100) substrate by metalorganic molecular beam epitaxy(MOMBE). Hafnium $t-butoxide[Hf(O{\cdot}t-C_4H_9)_4]$ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and high-resolution transmission electron measurement(HR-TEM). The properties of the $HfO_2$ layers were evaluated by X-ray diffraction(XRD), high frequency capacitance-voltage measurement(HF C-V), current-voltage measurement(I-V), and atomic force measurement(AFM). HF C-V measurements have shown that $HfO_2$ layer grown by MOMBE has a high dielectric constant(k=19-21). The properties of $HfO_2$ films are affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows. In this paper, we examined the relationship between the $O_2/Ar$ gas ratio and the electrical properties of $HfO_2$.

• Korean Journal of Materials Research
• /
• v.12 no.7
• /
• pp.528-532
• /
• 2002

Anodic $TiO_2$film on Ti substrate was fabricated at 180V in sulfuric acid solutions containing phosphoric acid and hydrogen peroxide. Effects of the anodizing conditions on the morphology of the oxide layers, and chemical states of the component elements of the layers were studied primarily using SEM, XRD, AFM, and XPS. The pores in the oxide layer was not uniform in size, shape, and growth direction particularly near the interface between the substrate and the oxide layer, compared with those of the surface layer. The formation of irregular type of pores seemed to be attributed to spark discharge phenomena which heavily occurred during increasing the anodic voltage. The pore diameter and the cell size increased, and the number of cells per unit area decreased with the increasing time. From the XPS results, it was shown that component elements of the electrolytes, P and S, existed in the chemical states of $PO_4^{-3}$ , $P_2$$O_{5}$, $SO_4^{-2}$ , $SO_3^{-2}$ , P, S, etc., which were penetrated from the electrolytes into the oxide layer during anodization.

• Progress in Superconductivity and Cryogenics
• /
• v.9 no.1
• /
• pp.22-26
• /
• 2007

Superconductor is weak in AC condition. Bifilar geometry provides a solution to reduce AC loss. Bifialr geometry is piled up or wound with more than two layers. When a layer of superconductor abuts on other layers, AC loss is affected by not only self-field, but also magnetic field induced by adjacent layers. In this study, two superconductors are piled up as a series connection so that current flows in different directions. By this method, magnetic field is cancelled. If magnetic field is cancelled, AC loss is reduced. To compare AC loss with respect to piling method, we measured the AC loss difference between the case facing each other with substrate side and the case facing with YBCO side. Measured AC loss is compared with one-way current flow single layer AC loss. In addition, we analyzed how much AC loss was increased, or reduced. All results were compared with those calculated with Norris equation. By this experiment, we concluded that distance between two wires is the important cause of AC loss. The distance between two wires affects magnetic field reduction in YBCO and induced current flow on substrate side.

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.1
• /
• pp.45-54
• /
• 2020

Recently, market demands of miniaturization, high interconnection density, and fine pitch of PCBs continuously keep increasing. Therefore, SLP (substrate like PCB) technology using a modified semi additive process (MSAP) has attracted great attention. In particular, SLP technology is essential for the development of high-capacity batteries and 5G technology for smartphones. In this study, the reliability of the microvia of hybrid SLP, which is made of conventional HDI (high density interconnect) and MSAP technologies, was investigated by experimental and numerical analysis. Through thermal cycling reliability test using IST (interconnect stress test) and finite element numerical analysis, the effects of various parameters such as prepreg properties, thickness, number of layers, microvia size, and misalignment on microvia reliability were investigated for optimal design of SLP. As thermal expansion coefficient (CTE) of prepreg decreased, the reliability of microvia increased. The thinner the prepreg thickness, the higher the reliability. Increasing the size of the microvia hole and the pad will alleviate stress and improve reliability. On the other hand, as the number of prepreg layers increased, the reliability of microvia decreased. Also, the larger the misalignment, the lower the reliability. In particular, among these parameters, CTE of prepreg material has the greatest impact on the microvia reliability. The results of numerical stress analysis were in good agreement with the experimental results. As the stress of the microvia decreased, the reliability of the microvia increased. These experimental and numerical results will provide a useful guideline for design and fabrication of SLP substrate.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.327.1-327.1
• /
• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.10a
• /
• pp.18.1-18.1
• /
• 2011

Some applications of carbon nanotubes (CNTs) as field emitters, such as x-ray tubes and microwave amplifiers, require high current emission from a small emitter area. To emit the high current density, CNT emitters should be optimally fabricated in terms of material properties and morphological aspects including high crystallinity, aspect ratio, distribution density, height uniformity, adhesion on a substrate, low outgassing rate during electron emission in vacuum, etc. In particular, adhesion of emitters on the substrate is one of the most important parameters to be secured for high current field emission from CNTs. So, we attempted a novel approach to improve the adhesion of CNT emitters by incorporating metal oxide layers between CNT emitters. In our previous study, CNT emitters were fabricated on a metal mesh by filtrating the aqueous suspensions containing both highly crystalline thin multiwalled CNTs and thick entangled multiwalled CNTs. However, the adhesion of CNT film was not enough to produce a high emission current for an extended period of time even after adopting the metal mesh as a fixing substrate of the CNT film. While a high current was emitted, some part of the film was shown to delaminate. In order to strengthen the CNT networks, cobalt-nickel oxides were incorporated into the film. After coating the oxide layer, the CNT tips seemed to be more strongly adhered on the CNT bush. Without the oxide layer, the field emission voltage-current curve moved fast to a high voltage side as increasing the number of voltage sweeps. With the cobalt-nickel oxide incorporated, however, the curve does not move after the second voltage sweep. Such improvement of emission properties seemed to be attributed to stronger adhesion of the CNT film which was imparted by the cobalt-nickel oxide layer between CNT networks. Observed after field emission for an extended period of time, the CNT film with the oxide layer showed less damage on the surface caused by high current emission.

• Journal of the Korean institute of surface engineering
• /
• v.49 no.6
• /
• pp.530-538
• /
• 2016

There is a close relationship between the performance and the heat generation of the electronic device. Heat generation causes a significant degradation of the durability and/or efficiency of the device. It is necessary to have an effective method to release the generated heat. Based on demands of the printed circuit board (PCB) manufacturing, it is necessary to develop a robust and reliable plating technique for substrates with high thermal conductivity, such as alumina ($Al_2O_3$), aluminium nitride (AlN), and silicon nitride ($Si_3N_4$). In this study, the plating of metal layers on an insulating silicon nitride ($Si_3N_4$) ceramic substrate was developed. We formed a Pd-$TiO_2$ adhesion layer and used APTES(3-Aminopropyltriethoxysilane) to form OH groups on the surface and adhere the metal layer on the insulating $Si_3N_4$ substrate. We used an electroless Ni plating without sensitization/activation process, as Pd particles were nucleated on the $TiO_2$ layer. The electrical resistivity of Ni and Cu layers is $7.27{\times}10^{-5}$ and $1.32{\times}10^{-6}ohm-cm$ by 4 point prober, respectively. The adhesion strength is 2.506 N by scratch test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.292-292
• /
• 2007

To apply PDP panel, Soda lime glass(SLG) is cheeper than Non-alkali glass and PD-200 glass but has problems such as low strain temperature and ion diffusion by alkali metal oxide. In this paper suggest the methode that prohibits ion diffusion by deposing barrier layer on SLG. Indium thin oxide(ITO) thin films and barrier layers were prepared on SLG substrate by Rf-magnetron sputtering. These films show a high electrical resistivity and rough uniformity as compared with PD-200 glass due to the alkali ion from the SLG on diffuse to the ITO film by the heat treatment. However these properties can be improved by introducing a barrier layer of $SiO_2\;or\;Al_2O_3$ between ITO film and SLG substrate. The characteristics of films were examined by the 4-point probe, SEM, UV-VIS spectrometer, and X-ray diffraction. GDS analysis confirmed that barrier layer inhibited Na and Ka ion diffusion from SLG. Especially ITO films deposited on the $Al_2O_3$ barrier layer had higher properties than those deposited on the $SiO_2$ barrier layer.

• Journal of Powder Materials
• /
• v.31 no.3
• /
• pp.220-225
• /
• 2024

Molten salt reactors represent a promising advancement in nuclear technology due to their potential for enhanced safety, higher efficiency, and reduced nuclear waste. However, the development of structural materials that can survive under severe corrosion environments is crucial. In the present work, pure Ni was deposited on the surface of 316H stainless steel using a directed energy deposition (DED) process. This study aimed to fabricate pure Ni alloy layers on an STS316H alloy substrate. It was observed that low laser power during the deposition of pure Ni on the STS316H substrate could induce stacking defects such as surface irregularities and internal voids, which were confirmed through photographic and SEM analyses. Additionally, the diffusion of Fe and Cr elements from the STS316H substrate into the Ni layers was observed to decrease with increasing Ni deposition height. Analysis of the composition of Cr and Fe components within the Ni deposition structures allows for the prediction of properties such as the corrosion resistance of Ni.

• Korean Journal of Optics and Photonics
• /
• v.18 no.5
• /
• pp.351-361
• /
• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.