• Korean Journal of Materials Research
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• v.21 no.4
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• pp.236-241
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• 2011

Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at $150{\sim}400^{\circ}C$, integrated further to form the top electrode and pad, and finally characterized. The precursor solutions were composed of 20% perhydro-polysilazane ($SiH_2NH$)n, and 20% hydropolymethyl silazane ($SiHCH_3NH$)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals into silicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that the different results that were obtained originated from the fact that the two precursors, despite having the same synthetic route and annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a larger capacitance of $2.776{\times}10^{-11}$ F and a lower leakage current of 0.4 pA were obtained from the polysilazane-based dielectric films, as compared to $9.457{\times}10^{-12}$ F and 2.4 pA from the silazane-based film, thus producing a higher dielectric constant of 5.48 compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bonds and the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C. The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectric film.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

• Korean Journal of Materials Research
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• v.26 no.10
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• pp.577-582
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• 2016

$Dy^{3+}$ and $Eu^{3+}$-codoped $SrWO_4$ phosphor thin films were deposited on sapphire substrates by radio frequency magnetron sputtering by changing the growth and thermal annealing temperatures. The results show that the structural and optical properties of the phosphor thin films depended on the growth and thermal annealing temperatures. All the phosphor thin films, irrespective of the growth or the thermal annealing temperatures, exhibited tetragonal structures with a dominant (112) diffraction peak. The thin films deposited at a growth temperature of $100^{\circ}C$ and a thermal annealing temperature of $650^{\circ}C$ showed average transmittances of 87.5% and 88.4% in the wavelength range of 500-1100 nm and band gap energy values of 4.00 and 4.20 eV, respectively. The excitation spectra of the phosphor thin films showed a broad charge transfer band that peaked at 234 nm, which is in the range of 200-270 nm. The emission spectra under ultraviolet excitation at 234 nm showed an intense emission peak at 572 nm and several weaker bands at 479, 612, 660, and 758 nm. These results suggest that the $SrWO_4$: $Dy^{3+}$, $Eu^{3+}$ thin films can be used as white light emitting materials suitable for applications in display and solid-state lighting.

• Journal of Welding and Joining
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• v.27 no.3
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• pp.38-43
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• 2009

The optimization of the welding parameters was studied to maximize the weldability and minimize the amount of spatter in the MAG welding of automotive steel sheets under different shielding gas composition ratio. JS-EFSC, JS-SPHC steel plates and Ar mixture gases were used as a substrate and shielding gas for welding respectively. The five welding parameters were selected through preliminary experiments and their effects on the weldability were analyzed. Experiments were performed using the Taguchi experimental method. As results, appropriate range for welding could be achieved. Amount of spatter in 80%Ar+20%$CO_2$ shielding gas was 20% of that of $CO_2$welding. Therefore, in terms of high productivity and welding cost, Ar mixture gas(80%Ar+20%$CO_2$) was recommended as a shielding gas for application of MAG process, indicating the low spatter and good weld quality.

• Korean Journal of Medicinal Crop Science
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• v.20 no.4
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• pp.217-221
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• 2012

This research was conducted to investigate the influence of various organic substrates on growth and yield of ginseng seedling grown organically in the closed plastic house. The pH and EC of substrates used for organically ginseng cultivation ranged 5.93~6.78 and 0.03~0.15 dS/m respectively. The concentrations $NH_4$-N and $NO_3$-N respectively was 14.01~68.63 mg/L, 5.60~58.83 mg/L. The average quantum of the closed plastic house was range from 10 to 16% of natural light. In July and August, the maximum temperature of the closed plastic house did not exceed 30 and the average temperature was maintained within 25 lower than the field because air conditioning ran. The PPV-1 and PPV-2 bed soil substrates produced higher stem length, stem diameter, shoot fresh weight and leaf area than those of conventional culture. In PPV-2 bed soil substrates, root fresh weight and root diameter was the highest. The root fresh weight of PPV-2 bed soil substrates in closed plastic house was maximum 25% heavier than the conventional cultivation. The results of this experiment will be utilized for making new substrate application for organic ginseng culture in the plastic house.

• Journal of Microbiology
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• v.35 no.2
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• pp.109-116
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• 1997

An extracellular proteinase of Candida albicans was purified by a combination of 0~75% ammonium sulfate precipitation, DEAE Sepharose Fast Flow ion exchange chromatography, and Sephacryl S-200 HR molecular sieve chromatography. Its mlecular weight was approximately 41 kDa on SDS-PAGE and isoelectric point was 4.4. The enzyme was inhibited by pepstain A. Optimum enzyme activity ranged from pH 2.0 to 3.5 with its maximum at pH 2.5 and a temperature of 45$^{\circ}C$. The addition of divalent cations, $Ca^{2+}$, Zn$^{2+}$ and $Mg^{2+}$, resulted in no significant inhibition of enzymatic activity. However, some inhibitory effects were observed by Fe$^{2+}$, Ag$^{2+}$ and Cu$^{2+}$. With BSA as substrate, an apparent $K_m$ was determined to be 7$\times$10$^{-7}$ M and $K_i$, using pepstatin A as an inhibitor, was 8.05$\times$10$^{-8}$ M. N-terminal amino acid sequence was QAVPVTLXNEQ. Degradation of BSA and fibronectin was shown but not collagen, hemoglobin, immunoglobulin G, or lysozyme. The enzyme preferred peptides with Glu and Leu at the P$_1$ position, but the enzyme activity was highly reduced when the P$_2$ position was phe or pro. This enzyme showed antigenicity against sera of patients with candidiasis.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1367-1372
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• 1988

In this paper, we have optimized the computation of the CSP - LOC (Channel Substrate Planar-Large Optical Cavity) structure to design the gith power (Ga, Al) As/GaAs CSP-LOC laser diode. The parameters of the device on the bases of experimental datas include the effects of the various layer thickness, material absorption coefficients, stripe width and so forth. At active layer ($d_2$)=0.08 um with optical layer ($d_3$)=0.5 um and $d_2$ = 0.1 um with $d_3$ = 0.4 um, we find the narrower beam divergence and stable high power in the lowest-order mode without the phenomenon of spatial hole burning. The results of theoretical computation show good agreement with experimental measurements made on LPE grown CSP-LOC. Finally, we developed an practical program and the program is applicable to the CSP-LOC lasers with any materials.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.96-101
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• 2013

In this paper we analyzed the effects of polystyrene(PS) blended in TIPS-pentacene on the performance of OTFTs. With the various molecular weight and the content of PS the performance of TIPS-pentacene OTFTs was examined and the proper molecular weight and the content were extracted for the best results. With the molecular weight of 9,580 and 0.3 wt% of PS OTFTs produced the mobility of $1.0{\pm}0.19cm^2/V{\cdot}sec$, the subthreshold slope $0.22{\pm}0.05$ V/dec, the threshold voltage $-1.19{\pm}1.21$ V, the current on/of ratio $7.12{\pm}2.09{\times}10^6$. Additionally the suitable substrate temperature for ink jet printing of the blended TIPS-pentacene OTFTs was also extracted and it was $46^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.1
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• pp.1-7
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• 2017

In this paper, a design method for a compact stepped open slot antenna for an operation in the UWB band is studied. The proposed antenna is miniaturized by inserting L-shaped slots on the ground plane of the stepped open slot antenna through the creation of a resonance in the low frequency, and a strip director is appended to the antenna in order to increase the gain in the middle and high frequency regions. The effects of varying the length of the L-shaped slots, the distance between the director and the slot antenna, and the director length on input reflection coefficient and realized gain characteristics of the proposed antenna are analyzed. The optimized antenna with the size of $30mm{\times}30mm$ is fabricated on an FR4 substrate, and the experiment results show that the antenna has a frequency band of 3.02-11.04 GHz for a VSWR < 2, which assures the operation in the UWB band.

• KSBB Journal
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• v.4 no.2
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• pp.134-142
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• 1989

In exopolysaccharide fermentation by Aureobasidium pulluans, the effects culture conditions (concentration of nitrogen, potassium phosphate, dissolved oxygen, and initial pH) on the production of exopolysaccharide and the appearance of melanin pigment were investigated. The results are as follows. (1) The specific growth rate and the specific production rate of exopolysaccharide were inhibited by substrate when the carbon source concentration higher than $50g\;/\;{\ell}$ and the cell growth increased with increases of nitrogen source but exopolysaccharide production decreased with the nitrogen concentration when it become greater than $1\;g\;/\;{\ell}$. (2) The maximum cell growth and the maximum exopolysaccharide production were obtained at initial pH values of 3.0 and 7.5 respectively. As the initial pH increased, the yeast-like cells increased and the increased of dissolved oxygen increased the cell growth and exopolysaccharide production. (3) As the concentration of dissolved oxygen is increased or the concentration of nitrogen source is decreased, the period of melanin pigment appearance becomes shorter and the melanin pigment never appeared when the initial pH was less than 3.0 or the potassium phosphate was not added.