• 한국표면공학회지
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• 제29권2호
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• pp.93-99
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• 1996

In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{\circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substrate bias voltage was applied. The optimum substrate bias voltage for c-BN bonding was determined by FTIR analysis on specimens which were deposited with various bias voltages. Then BN thin film was deposited with this optimum condition and its phase, morphology, chemical composition, and refractive index were compared with those of BN film which was deposited without bias voltage. FTIR results showed that BN films deposited with substrate bias voltage were composed of mixed phases of c-BN and h-BN, while those deposited without bias voltage were h-BN only. When pure Ar gas was used for sputtering gas, BN films were delaminated easily from substrate in air, while when 10% $N_2$ gas was added to the sputtering gas, although c-BN specific infrared peak was reduced, delamination did not occur. GXRD and TEM results showed that BN films were amorphous phases regardless of substrate bias voltage, and AES results showed that the chemical compositions of B/N were about 1.7~1.8. The refractive index of BN film deposited with bias voltage was higher than that without bias voltage. The reason is believed to be the existence of c-BN bonding in BN film and the higher density of film that deposited with the substrate bias voltage.

• Transactions on Electrical and Electronic Materials
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• 제5권3호
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• pp.122-125
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• 2004

ITO films were deposited on polyethylene terephthalate substrate by a dc reactive magnetron sputtering using rf bias without substrate heater and post-deposition thermal treatment. The dependency of rf substrate bias on plasma sputter processing was investigated to control energetic particles and improve ITO film properties. The substrate was applied negative rf bias voltage from 0 to -80 V. The composition of indium, tin, and oxygen atoms is strongly depended on the rf substrate bias. Oxygen deficiency is the highest at rf bias of -20 V. The electrical and optical properties of ITO films also are dominated obviously by negative rf bias.

• 한국진공학회지
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• 제12권3호
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• pp.174-181
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• 2003

본 논문은 탄탈 확산 방지막의 증착시 음의 기판 바이어스에 의한 탄탈막의 특성변화와 열적 안정성에 대해서 고찰하였다. 기판 바이어스를 걸지 않은 경우, 탄탈막은 원주형 모양의 결정 성장을 보이는 주상구조와 250 $\mu\Omega$cm의 높은 비저항값을 보였으나, 기판 바이어스를 걸어줌에 파라서 주상구조가 아닌 치밀한 미세구조와 표면이 평탄한 막이 형성되었고 비저항값도 현저히 감소되었으며, 특히 -125 V에서 증착된 탄탈막은 비저항값이 약 40 $\mu\Omega$cm로 이는 탄탈 벌크의 저항값 (13 $\mu\Omega$cm)에 근접한 값임을 알 수 있었다. 또한, 탄탈 확산 방지막의 열적 안정성에 대해서도, 기판 바이어스를 걸지 않은 탄탈막의 경우 $400^{\circ}C$에서 구리와 실리콘의 반응에 의해 비저항 값이 크게 증가한 결과에 비해, 기판 바이어스에 의해 증착된 탄탈막의 경우 $600^{\circ}C$까지 확산 방지막의 효과를 유지하고 있는 것으로 관찰되었다.

• 한국표면공학회지
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• 제52권6호
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• pp.342-349
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• 2019

Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N₂/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiN_x films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiN_x films was decreased with application of the pulsed DC substrate bias voltage. The TiN_x films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiN_x films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1440-1441
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• 2006

In this study, we synthesized CNTs(carbon nanotubes) on the glass substrate by microwave plasma enhanced chemical vapor deposition (MPECVD), Effect of bias voltage on the grown behavior and morphology of CNTs were investigated. Recently, it has been proposed that aligned CNTs can also be achieved by the application of electric bias to the substrate during growth, the first time reported the bias effect such that the nanotube alignment occurred only when a positive bias was applied to the substrate whereas no aligned growth occurred under a negative bias and no tube growth was observed without bias. On the country, several researchers reported some different observations that aligned nanotubes could also be grown under negative substrate biases. This discrepancy as for the effect of positive and negative bias may indicate that the bias effect is not fully understood yet. The glass and Si wafers were first deposited with TiN buffer layer by r.f sputtering method, and then Ni catalyst same method, The thickness of TiN and Ni layer were 200 nm and 60 nm, respectively. The main process parameters include the substrate bias (0 to - 300 V), and deposition pressure (8 to 20 torr).

• 한국세라믹학회지
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• 제47권6호
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• pp.479-484
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• 2010

Microstructural and mechanical properties of the TiN films deposited on Si substrates under various substrate bias voltages by a reactive magnetron sputtering have been studied. It was found that the crystallographic texture, microstructural morphology and mechanical property of the TiN films were strongly depended on the substrate bias voltage. TiN films deposited without bias exhibited a mixed (200)-(111) texture with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. It is also observed that the crystallite size decreases with increasing bias voltage, which corresponds to the increasing diffraction peak width of XRD patterns. The average surface roughness was calculated from AFM images of the films; these results indicated that the average surface roughness was increased with an increase in the bias voltage of the coatings.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.153-157
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• 2004

ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.

• 한국표면공학회지
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• 제28권6호
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• pp.343-351
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• 1995

Titanium nitride films have been prepared on various substrates (silicon wafer, HSS) by cathode arc ion plating process to measure microhardness, adhesion and wear-resistant behaviors by changing the substrate bias voltages (0∼-300V), thickness and roughness. Microhardnesses were measured by micro vickers hardness tester, the adhesion strengths were evaluated by acoustic signals through the scratch test with incremental applied load. As the substrate bias voltages were increased, the ｛111｝ orientation was predominant, the microhardnesses and adhesion strengths of tool steel were observed to be stronger than those of without subatrate bias voltage. Adhesion strengths of the substrate bias were 4-7 times higher than those of without the substrate bias, confirmed by SEM with EDX. Wear resistances were used pin-on-disk tribotester and TiN costing reduced the abrasive wear. As the substrate bias was increased, the weight loss and the friction coefficient was decreased.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.177-181
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• 2009

Compositional gradient CrNx coatings were fabricated using arc ion plating in Ar/$N_2$ gaseous mixture by gradually increasing $N_2$ flux rate from 0 to 120 SCCM. The effect of negative substrate bias on the film microstructure and mechanical properties were systematically investigated with XRD, GDOES, and SEM. The results show that substrate bias has an important influence on film growth and microstructure of gradient CrNx coatings. The coatings mainly crystallized in the mixture of hexagonal $Cr_{2}N$ and fcc CrN phases. By increasing substrate bias, film microstructure evolved from an apparent columnar structure to an equiaxed one. With increasing substrate bias, deposition rate first increased, and then decreased. The maximum of deposition rate was 15 nm/min obtained at a bias of -50V.

• 한국산업정보학회:학술대회논문집
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• 한국산업정보학회 2002년도 춘계학술대회 논문집
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• pp.195-199
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• 2002

This paper describes the effect of substrate back bias of CMOS Inverter. When the substrate back bias applied in body, the MOS transistor threshold voltage increased and drain saturation current decreased. The back gate reverse bias or substrate bias has been widely utilized and the following advantage has suppressing subthreshold leakage, lowering parasitic junction capacitance, preventing latch up or parasitic bipolar transistor, etc. When the reverse voltage applied substrate, this paper stimulated the propagation delay time CMOS inverter.