• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 하계학술발표회 논문집
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• pp.285-286
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• 2007

Current distributions according to electrode patterns in vertical structured InGaN/GaN LED (light emitting diode) were investigated quantitatively by utilizing three dimensional electrical circuit modeling method. The uniformity of the injected current density in the active layer was compared among different electrode patterns. It was found that the current uniformity was greatly dependent on the electrode pattern in vertical InGaN/GaN LEDs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1459-1461
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• 1996

The optical and electrical properties of High Power AlGaAs/AlGaAs Infrared LED with DDH( Double power Double Hetero Junction) structure are investigated. The high power LED is recently studied in order to apply to high speed communication devices. The power out of AlGaAs/AlGaAs with DDH structure is 13.0[mW], the forward voltage is 1.45[V], and the average decrease rate of power out is about 5[%] after aging test. The optical and electrical properties of DDH structure LED are superior than that of SH structured LED. The DDH structured LED is suitable to the high speed communication devices.

• 한국광학회:학술대회논문집
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• 한국광학회 1991년도 제6회 파동 및 레이저 학술발표회 Prodeedings of 6th Conference on Waves and Lasers
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• pp.139-143
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• 1991

GRIN-SCH quantum well structured Laser Diode were fabricated using MOCVD and operated as CW at room temperature. The threshold current density of the LD with 670${\mu}{\textrm}{m}$ cavity length was 530 A/$\textrm{cm}^2$. For the ridge waveguide type index guiding structured LD with 6${\mu}{\textrm}{m}$ stripe width and 240${\mu}{\textrm}{m}$ cavity length, the threshold current was 50㎃. The maximum differential quantum efficiency was 0.95W/A when the optical output was 60mW. The lasing wavelength of QW LD was 865nm. In the L-I measurement. TE mode was superior to TM mode. From the near field pattern, single lateral mode operation was observed.

• Korean Chemical Engineering Research
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• 제57권2호
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• pp.259-266
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• 2019

Tuning of electro-optical properties of nano-structured $SnO_2:Ga$ powders in a micro drop fluidized reactor (MDFR) was highly effective to enhance the activities of powders to be used as sensor materials. The tuning was conducted continuously in a facile one-step process during the formation of powders. The microscopic hydrodynamic forces affected the band gap structure and charge transfer of $SnO_2:Ga$ powders through the oxygen and interfacial tin vacancies by providing plausible pyro-hydraulic conditions, which resulted in the decrease in the electrical resistance of the materials. The analyses of room-temperature photoluminescence (PL) spectra and FT-IR exhibited that the tuning could improve the surface activities of $SnO_2:Ga$ powders by adjusting the excitation as well as separation of electrons and holes, thus maximizing the oxygen vacancies at the surface of the powders. The scheme of photocatalytic mechanism of $SnO_2:Ga$ powders was also discussed.

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.185-192
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• 1989

It is shown that GaAs/GaAs stripe Roof-Top-Reflector LD is better than cleaved mirror LD by numerical analysis. And surface light emitting device is developed by LPE melt-back growth, which is of good controllability for OEIC. OEIC transmitter using RTR LD structured device and FET has been made and modulated, expected to show good modulation characteristics after solving process problem. Beam-Lead LD mounted on Si carrier has been made and shows low heat-resistance and so long life and good characteristics of LD.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.44-48
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• 2017

We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

• 한국자기학회지
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• 제23권4호
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• pp.117-121
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• 2013

본 연구에서는 대표적인 강자성 금속인 Fe에 비자성 원소가 치환된 비교적 단순한 B2 구조의 FeX(X = Al, Si, Ni, Ga, Ge, Sn) 합금의 자기변형계수를 제일원리계산으로 수행하여 Fe 기반 합금이 희토류 원소 기반 자기변형 물질인 Terfenol을 대체할 수 있는 가능성을 탐색하였다. 계산방법으로 자성 연구에 가장 적합한 것으로 알려져 있는 총퍼텐셜 선형보강 평면파(Full-potential Linearized Augmented Plane Wave; FLAPW) 방법을 사용하였으며 일반화 물매근사(generalized gradient approximation: GGA)을 도입하여 전자 상호간의 교환-상관 퍼텐셜을 기술하였다. B2 구조의 FeX(X = Al, Si, Ni, Ga, Ge, Sn)의 합금들 중에 FeSi와 FeGe은 비자성 상태가, 그 외 나머지 합금은 강자성 상태가 안정된 것으로 계산되었다. FeAl, FeNi, FeGa, FeSn의 자기변형계수 는 각각 -5, +6, -84, -522ppm으로 계산되어 FeSn은 큰 자기변형을 가질 수도 있음을 예측하였다.

• 한국세라믹학회지
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• 제30권3호
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• pp.206-214
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• 1993

Coherent precipitation of Zn3P2 during Zn diffusion in a GaInAsP/InP heterostructure was studied using high-resolution transmission electron microscopy. Zn-diffusion-induced intermixing of Ga and In across the GaInAsP/InP heterointerface provided a Ga-mixed InP region which was nearly lattice-matched with Zn3P2 crystal and thus allowed thecoherent precipitation of Zn3P2. The Zn3P2 precipitates were preferentially nucleated at stacking faults which were formed to relax interfacial strain built up by the intermixing. The precipitates were grown to planar epitaxial layer along (100) plane in the lattice-matched region. The TEM images and diffraction pettern revealed that the tetragonal Zn3P2 crystals were coherently matched to the fcc structured GaInP matrix by the {{{{ SQRT {2} $\times$ SQRT {2} $\times$2 }} arrangement. The precipitation reaction of Zn3P2 was explained by an atomic migration model based on the kick-out mechanism.

• Bulletin of the Korean Chemical Society
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• 제33권11호
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• pp.3576-3580
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• 2012

Larva-like GaS nanostructures synthesized by the thermal evaporation of Ga metals and S powders were coated with $SiO_2$ by the sputtering technique. Transmission electron microscopy and X-ray diffraction analyses revealed that the cores and shells of the GaS-core/$SiO_2$-shell larva-like nanostructures were single crystal wurtzite-type hexagonal structured-GaS and amorphous $SiO_2$, respectively. Photoluminescence (PL) measurements at room temperature showed that the passivation of the larva-like GaS nanostructures was successfully achieved with $SiO_2$ without nearly harming the major emission from the wires. However, subsequent thermal annealing treatment was found to be undesirable owing to the degradation of their emission in intensity.

• 전산구조공학
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• 제11권3호
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• pp.213-228
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• 1998

구조설계 과정에서 설계대안을 효율적으로 생성하여 평가하면서, 특히 다목적 환경 속에서 최적구조의 위상과 부재의 치수까지 동시에 결정할 수 있는 새로운 방식을 제시하고자 한다. 설계자가 설계대안을 생성하기 위해 설계자의 경험과 노하우를 체계적으로 구축해 놓고 이를 적절한 시기에 활용할 수 있게 하는 방법으로는 인공지능 기술의 하나인 사례기반 추론 기법을 사용하였다. 이와 더불어, 설계대안들 간의 효율적인 비교와 평가를 위해서 구조물의 계층적인 면을 고려한 새로운 유전적인 표현법을 개발하였다. 여기에 기존의 유전적 표현법을 변경시켜 생긴 여분의 효과와 계층적인 특징을 가지는 Structured Genetic Algorithm(StrGA)를 변형시켜서 사례기반 추론에 의해 생성된 설계대안들을 표현하였다. 일반적인 구조설계 과정에서는 구조물을 평가하는 기준이 여러 개가 존재하므로, 모든 대안들을 동시에 최적화 하는 과정에 Multicriteria Optimization for Genetic Algorithm(MOGA)를 병합하였다. 본 논문에서는 인공지능 기술을 이용하여 구조물의 위상설계를 할 수 있는 새로운 방법을 제안하여 그 유용성을 truss 설계문제에 대해 검토하였다.