• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.335-335
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• 2011

Instability of a thin film attached to a compliant substrate often leads to emergence of exquisite wrinkle patterns with length scales that depend on the system geometry and applied stresses. However, the patterns that are created using the current techniques in polymer surface engineering, generally have low aspect ratio of undulation amplitude to wavelength, thus, limiting their application. Here, we present a novel and effective method that enables us to create wrinkles with a desired wavelength and high aspect ratio of amplitude over wavelength as large as to 2.5:1. First, we create buckle patterns with high aspect ratio of amplitude to wavelength by deposition of an amorphous carbon film on a surface of a soft polymer poly(dimethylsiloxane) (PDMS). Amorphous carbon films are used as a protective layer in structural systems and biomedical components, due to their low friction coefficient, strong wear resistance against, and high elastic modulus and hardness. The deposited carbon layer is generally under high residual compressive stresses (~1 GPa), making it susceptible to buckle delamination on a hard substrate (e.g. silicon or glass) and to wrinkle on a flexible or soft substrate. Then, we employ glancing angle deposition (GLAD) for deposition of a high aspect ratio patterns with amorphous carbon coating on a PDMS surface. Using this method, pattern amplitudes of several nm to submicron size can be achieved by varying the carbon deposition time, allowing us to harness patterned polymers substrates for variety of application. Specifically, we demonstrate a potential application of the high aspect wrinkles for changing the surface structures with low surface energy materials of amorphous carbon coatings, increasing the water wettability.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.20 no.1
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• pp.25-33
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• 2008

Water waves are generated mainly by winds in open seas and large lakes. They carry a significant amount of energy from winds into near-shore region. Thereby they significantly contribute to the regional hydrodynamics and transport process, producing strong physical, geological and environmental impact on coastal environment and on human activities in the coastal area. Furthermore an accurate prediction of the hydrodynamic effects due to wave interaction with offshore structures is a necessary requirement in the design, protection and operation of such structures. In the present paper surface and internal waves scattering by thin surface-piercing and bottom-standing vertical barriers in a two-layer fluid is analyzed in two-dimensions within the context of linearized theory of water waves. The reflection coefficients for surface and internal waves are computed and analyzed in various cases. It is found that wave reflection is strongly dependent on the interface location and the fluid density ratio apart from the barrier geometry.

• Journal of IKEEE
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• v.26 no.4
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• pp.705-709
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• 2022

The effect of the annealing temperature of the poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE)) solid electrolyte layer on the electrical properties of the P(VDF-TrFE)-based memristor was analyzed. In morphological analyses, the P(VDF-TrFE) thin film with 200℃ annealing temperature (200P(VDF-TrFE)) was shown to have surface roughness ≈5 times larger and thickness ≈20% smaller than that with 100℃ annealing temperature (100P(VDF-TrFE)). Compared to the 100P(VDF-TrFE) memristor (M100), the set voltage of the 200P(VDF-TrFE) memristor (M200) decreased by ≈50% and the magnitude of its reset voltage increased by ≈30%. Moreover, M200 was found to have better memory retention characteristics than M100. These differences were attributed to relatively strong local electric fields inside M200 compared to M100. This study suggests the importance of the annealing temperature in polymer memristors.

• Polymer(Korea)
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• v.33 no.3
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• pp.191-197
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• 2009

We have investigated the effect of strong p-type organic semiconductor $F_4$-TCNQ-doped CuPc hole transport layer on the performance of p-i-n type bulk heterojunction photovoltaic device with ITO/PEDOT:PSS/CuPc: $F_4$-TCNQ(5 wt%)/CuPc:C60(blending ratio l:l)/C60/BCP/LiF/Al, architecture fabricated via vacuum deposition process, and have evaluated the J-V characteristics, short-circuit current ($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and power conversion efficiency(${\eta}_e$) of the device. By doping $F_4$-TCNQ into CuPc hole transport layer, increased absorption intensity in absorption spectra, uniform dispersion of organic molecules in the layer, surface uniformity of the layer, and enhanced injection currents improved the current photovoltaic device with power conversion efficiency(${\eta}_e$) of 0.16%, which is still low value compared to silicone solar cell indicating that many efforts should be made to improve organic photovoltaic devices.

• Journal of Powder Materials
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• v.22 no.5
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• pp.321-325
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• 2015

The triboelectric property of a material is important to improve an efficiency of triboelectric generator (TEG) in energy harvesting from an ambient energy. In this study, we have studied the TEG property of a semiconducting $SnO_2$ which has yet to be explored so far. As a counter triboelectric material, PET and glass are used. Vertical contact mode is utilized to evaluate the TEG efficiency. $SnO_2$ thin film is deposited by atomic layer deposition on bare Si wafer for various thicknesses from 5.2 nm to 34.6 nm, where the TEG output is increased from 13.9V to 73.5V. Triboelectric series are determined by comparing the polarity of output voltage of 2 samples among $SnO_2$, PET, and glass. In conclusion, $SnO_2$, as an intrinsic n-type material, has the most strong tendency to be positive side to lose the electron and PET has the most strong tendency to be negative side to get the electron, and glass to be between them. Therefore, the $SnO_2$-PET combination shows the highest TEG efficiency.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1245-1251
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• 1999

Phase-change optical disk very rapid recording, high densification of data, resulting in high feedback rate and good C/N(carrier to noise) ratio of a feedback signal. However, repetitive thermal energy may cause the deformation of a disk or the lowering of an eliminability and a cyclability of the recording. The lowering of the cyclability can be reduced by insertion of thin layer of ZnS-$SiO_2$ dielectric thin film in appropriate disk structure between the upper and lower part of the recording film. Using the Taguchi method, optimum conditions satisfying both the optimized quality characteristic values and the scattering values for film formation were found to be the target R.F. power of 200W, the substrate R.F. power of 20W, the Ar pressure of 6mTorr, and the electrode distance of 6cm. From the refractive index data, the existence of the strong interaction between the electrode distance and Ar pressure was confirmed, and so was the large effect of the electrode distance on transmittance. According to the analysis of TEM and XRD, the closer the electrode distance was, the finer was the grain size due to the high deposition rate. However, the closer electrode distance brought the negative effect on the morphology of the film and caused the reduction of transmittance. AFM and SEM analyses showed that the closer the electrode distance was, the worse was the morphology due to the high rate of the deposition. Under optimum condition, the deposited thin film showed a good morphology and dense microstructure with less defects.

• Korean Journal of Food Science and Technology
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• v.34 no.2
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• pp.274-282
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• 2002

The ethanol extract and n-hexane fraction from Hypericum ascyron L. showed strong growth inhibition at 25 ppm on 5 strains of Listeria monocytogenes for 72 hr at $32^{\circ}C$. The purified substance, H2-5-2 fraction, was isolated by silica gel column and preparative thin layer chromatography from n-hexane fraction of Hypericum ascyron L. The H2-5-2 fraction showed a strong bacteriostatic activity on 5 strains of L. monocytogenes at 10 ppm in tryptic soy broth, and the viable cell was reduced 1 log cycle compared to initial cell number. The n-hexane fraction of Hypericum ascyron L. showed strong growth inhibition at 25 ppm on Bacillus cereus and Staphylococcus aureus, and at 50 ppm on Vibrio parahaemolyticus for 72 hr. The purified antimicrobial substance, the H2-5-2 fraction, was assumed as high unsaturated sterol by $^1H-NMR$ and $^{13}C-NMR$. On application test using minced Alaska pollack and ground beef, the n-hexane fraction of Hypericum ascyron L. at the level of 250 ppm was applied at $32^{\circ}C$ and $5^{\circ}C$. At $32^{\circ}C$ storage condition, the antimicrobial substances did not reduced L. monocytogenes ATCC 19113, meanwhile at $5^{\circ}C$ storage condition, L. monocytogenes ATCC 19113 was reduced in viable number.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.642-642
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• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

• Korean Journal of Environment and Ecology
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• v.38 no.2
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• pp.156-168
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• 2024

This study was carried out to provide fundamental data for forest land and the environment by investigating the vegetation structure and soil properties of forest land where Sarcodon impricatus are present. The study area was divided into the Quercus mongolica community, dominated by Q. mongolica and the Quercus variabilis community, a mixed forest with Q. variabilis, Q. mongolica and Pinus densiflora. Also, Calamagrostis arundinacea in the former community and Disporum smilacinum and Carex siderosticta in the latter community showed significant levels as indicator species. Both communities showed a strong correlation between available phosphate and pH, sand, and clay, and the high organic matter content and slightly acidic pH of the soil are believed to be related to the development of S. impricatus. The species appearing at the lower layer continue to dominate because the species appearing at the upper layer have secured realized niches. The site was distributed in a relatively humid place in a north-east direction, and soil was developed with a thin litter layer and low rock exposure. In the selected S. impricatus growing areas, vegetation centered on highly adaptable species to disturbance or external interference was developed. Therefore, it is expected to be used as fundamental data to promote the occurrence of S. impricatus during artificial cultivation, as it is possible to identify the stand where S. impricatus occurs indirectly.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.376-376
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• 2012

Semiconductor nanowires (NWs) are future building block for nano-scale devices. Especially, Ge NWs are fascinated material due to the high electrical conductivity with high carrier mobility. It is strong candidate material for post-CMOS technology. However, thermal stability of Ge NWs are poor than conventional semiconductor material such as Si. Especially, when it reduced size as small as nano-scale it will be melted around CMOS process temperature due to the melting point depression. Recently, Graphene have been intensively interested since it has high carrier mobility with single atomic thickness. In addition, it is chemically very stable due to the $sp^2$ hybridization. Graphene films shows good protecting layer for oxidation resistance and corrosion resistance of metal surface using its chemical properties. Recently, we successfully demonstrated CVD growth of monolayer graphene using Ge catalyst. Using our growth method, we synthesized Ge/graphene core/shell (Ge@G) NW and conducted it for highly thermal stability required devices. We confirm the existence of graphene shell and morphology of NWs using SEM, TEM and Raman spectra. SEM and TEM images clearly show very thin graphene shell. We annealed NWs in vacuum at high temperature. Our results indicated that surface melting phenomena of Ge NWs due to the high surface energy from curvature of NWs start around $550^{\circ}C$ which is $270^{\circ}C$ lower than bulk melting point. When we increases annealing temperature, tip of Ge NWs start to make sphere shape in order to reduce its surface energy. On the contrary, Ge@G NWs prevent surface melting of Ge NWs and no Ge spheres generated. Furthermore, we fabricated filed emission devices using pure Ge NWs and Ge@G NWs. Compare with pure Ge NWs, graphene protected Ge NWs show enhancement of reliability. This growth approach serves a thermal stability enhancement of semiconductor NWs.