Improvement of Triboelectric Efficiency using SnO2 Friction Layer for Triboelectric Generator
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Lee, No Ho
(Department of Materials Science and Engineering, Seoul National University of Science and Technology)
Shin, Jae Rok (Department of Materials Science and Engineering, Seoul National University of Science and Technology) Yoo, Ji Een (Department of Materials Science and Engineering, Seoul National University of Science and Technology) You, Dong Hun (Department of Materials Science and Engineering, Seoul National University of Science and Technology) Koo, Bon-Ryul (Department of Materials Science and Engineering, Seoul National University of Science and Technology) Lee, Sung Woo (Department of Materials Science and Engineering, Seoul National University of Science and Technology) Ahn, Hyo-Jin (Department of Materials Science and Engineering, Seoul National University of Science and Technology) Choi, Byung Joon (Department of Materials Science and Engineering, Seoul National University of Science and Technology) |
1 | Z. L. Wang, G. Zhu, Y. Yang, S. Wang and C. Pan: Mater. Today, 15 (2012) 532. DOI |
2 | Y. Yang, H. Zhang, Z. H. Lin, Y. S. Zhou, Q. Jing, Y. Su, J. Yang, J. Chen, C. Hu and Z. L. Wang: ACS Nano, 7 (2013) 9213. DOI |
3 | F. R. Fan, L. Lin, G. Zhu, W. Wu, R. Zhang and Z. L. Wang: Nano Lett., 12 (2012) 3109. DOI |
4 | S. Wang, L. Lin, Y. Xie, Q. Jing, S. Niu and Z. L. Wang: Nano Lett., 13 (2013) 2226. DOI |
5 | W. Yang, J. Chen, G. Zhu, X. Wen, P. Bai, Y. Su, Y. Lin and Z. Wang: Nano Res., 6 (2013) 880. DOI |
6 | Y. H. Ko, G. Nagaraju, S. H. Lee and J. S. Yu: ACS Appl. Mater. Interfaces, 6 (2014) 6631. DOI |
7 | W.-S. Jung, M.-G. Kang, H. G. Moon, S.-H. Baek, S.-J. Yoon, Z.-L. Wang, S.-W. Kim and C.-Y. Kang: Sci. Rep., 5 (2015) 9309. DOI |
8 | A. F. Diaz and R. M. Felix-Navarro: J. Electrostat., 62 (2004) 277. DOI |
9 | N. Murayama, N. Izu, W. Shin and I. Matsubara: Journal Ceram. Soc. Japan, 113, (2005) 330. DOI |
10 | Y.-I. Lee and Y.-H. Choa: J. Korean Powder Metall. Inst., 19 (2012) 271 (Korean). DOI |
11 | T. Feng, A. K. Ghosh and C. Fishman: Appl. Phys. Lett., 35 (1979) 266. DOI |
12 | W.-S. Choi: Trans. Electr. Electron. Mater., 10 (2009) 200. DOI |
13 | X. Du and S. M. George: Sens. Actuators B, 135 (2008) 152. DOI |
14 | C. W. Cho, J. H. Lee, D. H. Riu and C. Y. Kim: Jpn. J. Appl. Phys., 51 (2012) 045001. DOI |
15 | Y. Mo, Y. Okawa, M. Tajima, T. Nakai, N. Yoshiike and K. Natukawa: Sens. Actuators B, 79 (2001) 175. DOI |
16 | Y. J. Chen, L. Nie, X. Y. Xue, Y. G. Wang and T. H. Wang: Appl. Phys. Lett., 88 (2006) 083105. DOI |
17 | Y.-J. Choi, I.-S. Hwang, J.-G. Park, K. J. Choi, J.-H. Park and J.-H. Lee: Nanotechnology, 19 (2008) 095508. DOI |
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