• Title/Summary/Keyword: strong thin layer

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Effect of the hetero-epitaxial ZnO buffer layer for the formation of As-doped ZnO thin films (Hetero-epitaxial ZnO 버퍼층이 As-doped ZnO 박막의 증착조건에 미치는 영향)

  • Lee, Hong-Chan;Choi, Won-Kook;Shim, Kwang-Bo;Oh, Young-Jei
    • Journal of Sensor Science and Technology
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    • v.15 no.3
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    • pp.216-221
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    • 2006
  • ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure ($35{\sim}350$ mtorr) conditions. The Arsenic-doped (1, 3 wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The ${\theta}-2{\theta}$ XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films.

Improved Stability Sputtered IZO Thin Film Transistor Using Solution Processed Al2O3 Diffusion Layer (Solution-Processed Al2O3 확산층을 이용한 Sputtering IZO Thin Film Transistor의 안정성 향상)

  • Hwang, Namgyung;Lim, Yooseong;Lee, Jeong Seok;Lee, Sehyeong;Yi, Moonsuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.5
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    • pp.273-277
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    • 2018
  • This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed $Al_2O_3$ diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed $Al_2O_3$ diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed $Al_2O_3$-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.

Thin film solar cell efficiency improvement using the surface plasmon effect (표면 플라즈몬 효과를 이용한 박막형 태양전지 효율향상)

  • Byun, Soo-Hwan;Soh, Hyun-Jun;Yoo, Jeong-Hoon
    • Transactions of the Society of Information Storage Systems
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    • v.8 no.2
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    • pp.39-43
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    • 2012
  • In spite of many advantages, the practical application of the thin film solar cell is restricted due to its low efficiency compared with the bulk type solar cells. This study intends to adopt the surface plasmon effect using nano particles to solve the low efficiency problem in thin film solar cells. By inserting Ag nano-particles in the absorbing layer of a thin film solar cell, the poynting vector value of the absorbing layer is increased due to the strong energy field. Increasing the value may give thin film solar cells chance to absorb more energy from the incident beam so that the efficiency of the thin film solar cell can be improved. In this work, we have designed the optimal shape of Ag nano-particle in the absorbing laser of a basic type thin film solar cell using the finite element analysis commercial package COMSOL. Design parameters are set to the particle diameter and the distance between each Ag nano-particle and by changing those parameters using the full factorial design variable set-up, we can determine optimal design of Ag nano-particles for maximizing the poynting vector value in the absorbing layer.

Three-Dimensional Nanofabrication with Nanotransfer Printing and Atomic Layer Deposition

  • Kim, Su-Hwan;Han, Gyu-Seok;Han, Gi-Bok;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.87-87
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    • 2010
  • We report a new patterning technique of inorganic materials by using thin-film transfer printing (TFTP) with atomic layer deposition. This method consists of the atomic layer deposition (ALD) of inorganic thin film and a nanotransfer printing (nTP) that is based on a water-mediated transfer process. In the TFTP method, the Al2O3 ALD growth occurs on FTS-coated PDMS stamp without specific chemical species, such as hydroxyl group. The CF3-terminated alkylsiloxane monolayer, which is coated on PDMS stamp, provides a weak adhesion between the deposited Al2O3 and stamp, and promotes the easy and complete release of Al2O3 film from the stamp. And also, the water layer serves as an adhesion layer to provide good conformal contact and form strong covalent bonding between the Al2O3 layer and Si substrate. Thus, the TFTP technique is potentially useful for making nanochannels of various inorganic materials.

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Synthesis of $\textrm{N}_{G}$-Mon $o^{14}\textrm{C}$-methyl]-L-arginine ($\textrm{N}_{G}$-Mon $o^{14}\textrm{C}$-methyl]-L-arginine의 합성)

  • 조영봉
    • Environmental Analysis Health and Toxicology
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    • v.1 no.1
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    • pp.77-80
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    • 1986
  • Radiochemical synthesis of $N^{G}$-mono[$^{14}$ C-methyl]-L-arginine is described. The compound was synthesized from radio-active mono[$^{14}$ C]-methylamine as easily and purified by strong cation-exchange resin (NH form) liquid chromatography using a gradient of ammonium hydroxide, and crystallized as flavianate. The free amino acid was successfully prepared by strirring its flavianate and strong anion-exchange resin (OH- form), which could remove the flavianic acid from its salt in water below room temperature. Purity of the compound was tested by thin-layer chromatography, thin-layer electro-phoresis, and scintillation spectrometry.y.

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Exchange Coupling of FerromagneticlAntiferrmagnetic through Nonmagnetic Layer in Antiferromagnetic

  • Kim Jong-Min;Kim Young-Sung
    • Proceedings of the Korean Magnestics Society Conference
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    • 2004.12a
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    • pp.200-201
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    • 2004
  • The $H_{EB}$ was investigated for exchange coupling $20\;{\AA}\;Fe/x\;{\AA}\;NiO\;(type-I samples)$, $20\;{\AA}\;Fe/x\;{\AA}$ nonmagnetic layer $(MgO, Ag, Cu)/(500-x{\AA})$ NiO (type-II smaples). In type-I samples, the $H_{EB}$ is long-range coupling when looking from the point of view of the AFM. The $H_{EB}$ consistent with a generalized Meiklejohn-Bean approach. The critical thickness, which $H_{EB}$ is observed, is $130\;{\AA}$. In type-II samples, MgO layer more decouples the thin interfacial NiO from bottom NiO than other nonmagnetic layer. Nd the decoupling of Ag smallest. This means that the Ag layer has strong coupling the thin interfacial NiO with bottom NiO.

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Formation of methylamine from NG-Monomethyl-L-arginine in Rat (흰쥐에서 NG-Monomethyl-L-arginine으로부터 methylamine의 생성)

  • Cho, Young Bong;Ahn, Young Kon;Choi, Hong Soon;Kim, Choon Sung
    • Journal of Korean Society of Occupational and Environmental Hygiene
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    • v.6 no.1
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    • pp.138-143
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    • 1996
  • After oral administration of 14C-labelled $N^G$-mono[methyl-14C]-L-arginine into rats, 38.2 % and 14.7 % of the administered radioactivity bad been recovered in the urine and stool during 10 days. In the urine, 59.4 % of the radioactivity was recovered in the first 24-hours and used for the indentification of the formation of methylamine. The strong cation-exchange resin column chromatography showed 6.3 %, 7.4 %, 4.9 %, and 81.5 % of the distributions of radioactivity of the neutral, monomethylamine, basic, and uneluted portions, respectively. The radioactivity of monomethylamine portion reeluted into the column chromatography was 39.5 %. The radioactivities corresponding monomethylamine in the column chromatography, thin-layer chromatography, and thin-layer electrophoresis were 39.5 %, 37.3 %, and 28.8 % of the recovered radioactivity, respectively.

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Studies on Separation, Detection and Quantitation of Estriol, Estrone, Estradiol-17 β in Urine of Dairy Cows by Paper, Thin Layer and Column Chromatography (Paper, Thin Layer 및 Column Chromatography에 의한 요중의 Estriol, Estrone, Estadiol-17 β의 분리 정량에 관하여)

  • Yang, Yong Kwan;Han, Soo Nam;Cho, Jong Hoo
    • Korean Journal of Veterinary Research
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    • v.13 no.1
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    • pp.23-30
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    • 1973
  • Thin layer, paper and column chromatography were compared for the separation, detection and quantitation of three kinds of estrogen in urine of dairy cows. While thin layer chromatography utilizing silica gel was better for the detection of estrogens, column chromatography using celite 545 was preferable. Spectrophotometry was compared with fluorometry for determination of estrone, estradiol-17 ${\beta}$ and estriol eluted by paper chromatography and column chromatography. Optical density of three standard estrogens showed almost same curve at maximum absorption wave length of 230 and $282m{\mu}$. However, the former showed a higher peak. In fluorometry, the fluorescence intensity of estrone and estradiol-17 ${\beta}$ were rather strong, when the estrogens were dissolved in sulfuric acid, and showed higher sensitivity than that of the spectrophotometry. However, in the case of estriol was exceptional.

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Detection of Organic Halide by Using cis,cis-1,2,3,4-Tetraphenylbutadiene thin Film (cis,cis-1,2,3,4-Teteraphenylbutadiene 박막 필름을 이용한 유기 할로겐 화합물 감지)

  • Park, Jaehyun
    • Journal of Integrative Natural Science
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    • v.3 no.4
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    • pp.215-218
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    • 2010
  • cis,cis-1,2,3,4-Tetraphenylbutadiene has been synthesized and its optical properties are investigated by using UV-Vis absorption and fluorescence spectroscopy. Thin films of tetraphenylbutadiene prepared from thin layer chromatography(TLC) displays strong luminescence and used for the detection of vapor of organic halide. Tetraphenylbutadiene shows dramatic quenching photoluminescence under exposure of chloroform vapor.

Effects of CeO$_2$ Buffer Layer on Critical Current of YBCO Thin Films grown on Sapphire Substrate (CeO$_2$ 완충층이 사파이어 기판에 성장된 YBCO 박막의 임계전류에 미치는 영향)

  • Lim, Hae-Ryong;Kim, In-Seon;Kim, Dong-Ho;Park, Yong-Ki;Park, Jong-Chul
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.142-146
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    • 1999
  • CeO$_2$ buffer layers and in-situ YSa$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films were grown by pulsed laser deposition method on R-plane sapphire substrates. Superconducting properties and surface morphologies of YBCO thin films exhibit strong dependence on the crystallinity of CeO$_2$ buffer layer. The best a-axis oriented CeO$_2$ buffer layers could be grown at 800 $^{\circ}C$ of deposition temperature, 1.5 J/ cm$^2$ of laser energy density and 50 mTorr of oxygen pressure. The YBCO thin films on the a-axis CeO$_2$ buffer layer have Tc (R=0) ${\ge}$ 89.5 K, ${\delta}$Tc ${\sim}$ 0.5 K, and Jc ${\ge}$ 3.2 ${\times}$ 10$^6$ A/ cm$^2$ at 77 K.

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