• JSTS:Journal of Semiconductor Technology and Science
• /
• v.9 no.3
• /
• pp.166-173
• /
• 2009

The reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. nMOSFETs with metal/La-doped high-k dielectric stack show lower $V_{th}$ and $I_{gate}$, which is attributed to the dipole formation at the high-k/$SiO_2$ interface. The reliability results well correlate with the dipole model. Due to lower trapping efficiency, the La-doping of the high-k gate stacks can provide better PBTI immunity, as well as lower charge trapping compared to the control HfSiO stacks. While the devices with La show better immunity to positive bias temperature instability (PBTI) under normal operating conditions, the threshold voltage shift (${\Delta}V_{th}$) at high field PBTI is significant. The results of a transconductance shift (${\Delta}G_m$) that traps are easily generated during high field stress because the La weakens atomic bonding in the interface layer.

• Journal of Korean Society for Quality Management
• /
• v.39 no.4
• /
• pp.507-515
• /
• 2011

MIL-HDBK-217 has played a pivotal role in reliability prediction of electronic equipments for more than 30 years. Recently, RIAC developed a new methodology $217Plus^{TM}$which officially replaces MIL-HDBK-217. Sensitivity analysis of the 217Plus component models to various parameters has been performed and meaningful observations have been drawn in this study. We first briefly reviewed the $217Plus^{TM}$ methodolog and compared it with the conventional model, MIL-HDBK-217. We then performed sensitivity analysis $217Plus^{TM}$ component models to various parameters. Based on the six parameters and an orthogonal array selected, we have performed indepth analyses concerning parameter effects on the model. Our result indicates that, among various parameters, operating temperature and temperature rise during operation have the most significant impacts on the life of a component, and thus a design robust to high temperature is the most importantly required. Next, year of manufacture, duty cycle, and voltage stress are weaker but may be significant when they are in heavy load conditions. Although our study is restricted to a specific type of diodes, the results are still valid to other cases. The results in this study not only figure out the behavior of the predicted failure rate as a function of parameters but provide meaningful guidelines for practical applications.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.2
• /
• pp.106-113
• /
• 2006

Electrical properties of $Si_{0.88}Ge_{0.12}(C)$ p-MOSFETs have been exploited in an effort to investigate $Si_{0.88}Ge_{0.12}(C)$ channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in $Si_{0.88}Ge_{0.12}$ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. $Si_{0.88}Ge_{0.12}(C)$ channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of $Si_{0.88}Ge_{0.12}(C)$ heterostructures.

• Proceedings of the KIEE Conference
• /
• 2004.11d
• /
• pp.77-79
• /
• 2004

It is caused that insulation paper, which had got a lot of thermal stress by over-load after installation, should have been deteriorated in electrical and mechanical characteristics. Beside, insulation material is decreased the insulating property and accelerated aging of them in case of dielectric loss when transformers are manufactured with some moisture or transformers would have been them because of moisture-permeation. Therefore, in this study we experienced the influence of moisture content in case of the thermal aged insulation paper. we have measured tan 6 and breakdown voltage in the ratio of paper' moisture content before the aging and then taken the same tests again after insulation paper thermally accelerating-aged. There is a purpose to gain data for a life-design and to establish aging mechanism in order to continuously study life expectancy of the insulation paper

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.466-467
• /
• 2008

In case of a line-to-ground fault at transmission lines, a portion of fault current will flow into the earth through the footings of the faulted tower causing electrical potential rise nearby the faulted tower footings. In this situation, any buried pipelines or structures nearby the faulted tower can be exposed to the electrical stress by earth potential rise. Although many research works has been conducted on this phenomena, there has been no clear answer of the required separation distance between tower footings and neary buried pipeline because of its dependancy on the soil electrical charactersics of the concerned area and the faulted system.

• Proceedings of the KSME Conference
• /
• 2008.11a
• /
• pp.1857-1862
• /
• 2008

Resonant frequency tuning of micro devices is essential to achieve performance uniformity and high sensitivity. Previously reported frequency tuning methods using electrostatic force or mass deposition are not directly applicable to non-conducting polymer devices and have limitations such as dielectric breakdown or low tunable bandwidth. In this paper, thermally frequency-tunable microactuators with poly-dimethylsiloxane membranes are proposed. Permanent and/or nonpermanent frequency tunings are possible using a simple temperature control of the device. Resonant frequency and Q-factor variations of devices according to temperature change were studied using a micro heater and laser Doppler vibrometer. The initial resonant frequencies determined by polymer curing and hardening temperatures are reversibly tuned by thermal cycles. The measured resonant frequency of 9.7 kHz was tuned up by ${\sim}25%$ and Q-factor was increased from 14.5 to 27 as the micro heater voltage increased from 0 to 70 V.

• Proceedings of the KSME Conference
• /
• 2000.04b
• /
• pp.765-770
• /
• 2000

Hot-wire measurements are reported on the developing turbulent flows subject to plane rate of strain in a rotating $90^{\circ}$ dog bend. The cross-section of the bend varies from $100mm{\times}50mm$ rectangular shape at the bend inlet gradually to the $50mm{\times}100mm$ shape at the bend outlet with remaining a constant area. Data signals from the rotating test section are transmitted through a slip ring to the personal computer which is located at the outside of the rotating disc. 3-dimensional velocity and 6 Reynolds stress components were calculated from the equations which correlate the fluctuating and mean voltage values measured with rotating a slant type hot-wire into 6 orientations. The effects of Coriolis and centrifugal forces on the mean motions and turbulence structures are investigated with respect to rotational speed.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.6 no.2
• /
• pp.209-216
• /
• 2001

The conventional three-level high frequency phase-shifted dc/dc converter has a disadvantage that a circulating current flows through transformer and switching devices during the freewheeling interval. Due to this circulating current and RMS current stress, conduction losses of transformer and switching devices increases. To alleviate these problems, we propose an improved three-level Zero Voltage and Zero Current Switchig (ZVZCS) dc/dc converter using a tapped inductor, a snubber capacitor and two snubber diodes attached at the secondary side of transformer. The proposed ZVZCS converter is verified on a 7kW, 30kHz experimental prototype.

• Proceedings of the KIPE Conference
• /
• 2006.06a
• /
• pp.360-362
• /
• 2006

기존 플라이백 컨버터의 출력 정류 다이오드는 변압기 누설 인덕터와의 공진으로 소자의 전압 스트레스 부담이 크며 스너버의 부가가 필수적이다. 반면 제안된 다이오드 클램프 정류기를 채용한 플라이백 컨버터는 출력 다이오드가 출력전압의 절반 또는 출력전압으로 클램프 되어 전압 내압을 대폭 줄일 수 있고, 손실이 큰 스너버가 필요 없으며 저가형 및 고효율의 장점이 있다. 본 논문에서는 제안된 컨버터를 소개하고 동작원리 및 동작모드 해석과 시뮬레이션 및 실험을 통한 검증결과를 제시 한다.

• Journal of Power Electronics
• /
• v.9 no.2
• /
• pp.215-223
• /
• 2009

A design methodology for transformers including integrated and center-tapped structures for LLC resonant converters is proposed. In the LLC resonant converter, the resonant inductor in the primary side can be merged in the transformer as a leakage inductance. And, the absence of the secondary filter inductor creates low voltage stress on the secondary rectifiers and is cost-effective. A center-tapped structure of the transformer secondary side is widely used in commercial applications because of its higher efficiency and lower cost than full-bridge structures in the rectifying stages. However, this transformer structure has problems of resonance imbalance and transformer inefficiency caused by leakage inductance imbalance in the secondary side and the position of the air-gap in the transformer, respectively. In this paper, gain curves and soft-switching conditions are derived by first harmonic approximation (FHA) and operating circuit simulation. In addition, the effects of the transformer including integrated and center-tapped structures are analyzed by new FHA models and simulations to obtain an optimal design. Finally, the effects of the air-gap position are analyzed by an electromagnetic field simulator. The proposed analysis and design are verified by experimental results with a 385W LLC resonant converter.