• Title/Summary/Keyword: stress voltage

검색결과 1,070건 처리시간 0.026초

핫 캐리어에 의한 피-모스 트랜지스터의 채널에서 이동도의 열화 특성 (Degradation Characteristics of Mobility in Channel of P-MOSFET's by Hot Carriers)

  • 이용재
    • 한국전기전자재료학회논문지
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    • 제11권1호
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    • pp.26-32
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    • 1998
  • We have studied how the characteristics degradation between effective mobility and field effect mobility of gate channel in p-MOSFET's affects the gate channel length being follow by increased stress time and increased drain-source voltage stress. The experimental results between effective and field-effect mobility were analyzed that the measurement data are identical at the point of minimum slope in threshold voltage, the other part is different, that is, the effective mobility it the faster than the field-effect mobility. Also, It was found that the effective and field-effect mobility. Also, It was found that the effective and field-effect mobility of p-MOSFET's with short channel are increased by decreased channel length, increased stress time and increased drain-source voltage stress.

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나노 구조에서 실리콘 산화 절연막의 스트레스 유기 누설전류 (Stress Induced Leakage Currents in the Silicon Oxide Insulator with the Nano Structures)

  • 강창수
    • 대한전자공학회논문지TE
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    • 제39권4호
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    • pp.335-340
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    • 2002
  • 본 논문에서 얇은 실리콘 산화막의 스트레스 유기 누설전류는 나노 구조를 갖는 트랜지스터의 ULSI 실현을 위하여 조사하였다. 인가전압의 온 오프 시간에 따른 스트레스전류와 전이전류는 실리콘 산화막에 고전압 스트레스 유기 트랩분포를 측정하기 위하여 사용하였다. 스트레스전류와 전이전류는 고스트레스 전압에 의해 발생된 트랩의 충방전과 양계면 가까이에 발생된 트랩의 터널링에 기인한다. 스트레스 유기 누설전류는 전기적으로 기록 및 소거를 실행하는 메모리 소자에서 데이터 유지 능력에 영향이 있음을 알았다. 스트레스전류, 전이전류 그리고 스트레스 유기 누설전류의 두께 의존성에 따른 산화막 전류는 게이트 면적이 10/sup -3/㎠인 113.4Å에서 814Å까지의 산화막 두께를 갖는 소자에서 측정하였다. 스트레스 유기 누설전류, 스트레스전류, 그리고 전이전류는 데이터 유지를 위한 산화막 두께의 한계에 대해 연구 조사하였다.

온도와 습도에 따른 초고압 변압기용 앵글링 프레스보드 특성 (Angle Ring Press Board Characteristic in Accordance with Temperature and Humidity for High Voltage Transformer)

  • 서왕벽
    • 한국전기전자재료학회논문지
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    • 제33권1호
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    • pp.60-64
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    • 2020
  • In this study, to develop angle ring pressboards for high voltage transformers, the radius and thickness are modified under the conditions of temperature and humidity. In particular, a pressboard with a thickness of 6 mm and a radius at the angled part were investigated based on the simulation of the principal stress from the angled optimization profile shape. As a result, by the appropriate application of a higher temperature, the solid insulation can be improved to reduce the moisture content for an optimized profile angle of a high voltage transformer. This also results in the improvement of the safety factor by 25%. It is determined that the electrical insulation properties of pressboards in high voltage transformers can be enhanced by improving their properties.

주파수 변조 기법을 이용한 전압 클램프 특성을 갖는 유도가열용 Class-E 인버터의 새로운 제어에 관한 연구 (A Study on the New Control Scheme of Class-I Inverter for IH-Jar Applications with Clamped Voltage Characteristics Using Pulse frequency Modulation)

  • 이동윤;최영덕;현동석
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제52권3호
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    • pp.133-139
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    • 2003
  • In this paper, a new control scheme of Class-E inverter for Induction Heating (IH) Jar applications with clamped voltage characteristics using Pulse-Frequency-Modulation (PFM) is introduced. To reduce the voltage stress of switch, the proposed PFM control scheme doesn't need any auxiliary circuit in comparison to a family of Active Clamped Class-E (ACCE) inverter. It can decrease voltage stress of switch through modulation of switching frequency. The Class-E inverter using the proposed control scheme has the advantage of not only the same output power when it is compared with a Hybrid-Active Clamped Class-E (Hybrid-ACCE) inverter but also Zero-Voltage-Switching (ZVS), which are characteristics of conventional Class-E and ACCE inverter. The control principles and analysis of proposed method are explained in detail and its validity is verified through simulation and experimental results.

교번으로 영전압 스위칭 되는 다중공진형 컨버터 토폴로지 (Alternately Zero Voltage Switched Multi Resonant Converter Topology)

  • 김창선;박효식;오용승;김희준
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2002년도 전력전자학술대회 논문집
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    • pp.360-363
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    • 2002
  • In the resonant converters which can provide high efficiency and high power density, the resonant voltage stress is about $4\~5$ times the input voltage. It needs the power switch with high ratings. This is a reason why the conduction loss is increased. In this paper, it proposes the alternately zero voltage switched forward, flyback multi resonant converter topology for reducing the voltage stress using alternately zero voltage switching technique. And the proposed AT forward MRC Is experimentally considered about the loop gain with HP4194A network analyzer

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AC PDP 구동회로의 에너지 회생에 관한 연구 (A Study on the Energy Recovery of AC PDP Driving Circuits)

  • 정우창;강경우;유종걸;홍순찬
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2003년도 추계학술대회 논문집
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    • pp.267-270
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    • 2003
  • In this paper, a new energy recovery circuit for AC PDP(Plasma Display Panel) is proposed to decrease a sustain voltage and voltage stress on switching elements. In the proposed circuit, two auxiliary capacitors are connected directly to the power source through switching elements and inductors when ground potential is supplied to the panel. Therefore, the voltage across auxiliary capacitors can be increased by turns over the half of the source voltage. Because the intrinsic capacitance of PDP is charged sufficiently from the auxiliary capacitors, the level of sustain voltage and the voltage stress on the switching devices are decreased. To verify the validity of the proposed energy recovery circuit, computer simulations using PSpice program are carried out.

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불평형 전압 운전시의 역률보상용 커패시터 특성 연구 (A Study on the Characteristics for Power Capacitor under the Voltage Unbalance Operation)

  • 김일중;김종겸
    • 전기학회논문지P
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    • 제57권1호
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    • pp.36-40
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    • 2008
  • Most of the low-voltage feeder are designed with approximately balanced and connected at the three phase four wire systems. However, Most of the power distribution systems' load which is composed of single or three phase are unbalanced by generating load unbalance. Unbalanced current will draw a highly unbalanced voltage. The power factor of an induction motor at rated operation is between 25 and 90%, depending on the size and speed of the motor. However, many induction motors operate below the nominal rating, resulting in poor power factor. This condition needs power factor improvement. Addition of power capacitor at the motor terminal may draw to stress due to voltage unbalance. This paper presents operation characteristics on steady states of a three-phase induction motor under unbalanced voltages with power capacitor. The existence of voltage unbalance have an effect on stress of power capacitor.

Zero-Voltage-Transition Synchronous DC-DC Converters with Coupled Inductors

  • Rahimi, Akbar;Mohammadi, Mohammad Reza
    • Journal of Power Electronics
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    • 제16권1호
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    • pp.74-83
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    • 2016
  • A new family of zero-voltage-transition converters with synchronous rectification is introduced in this study. Soft switching condition for all the converter operating points is provided in the proposed converters. The reverse recovery losses of the rectifier switch body diode are also eliminated. In comparison with the main switch voltage stress, the auxiliary switch voltage stress is reduced significantly. The auxiliary switch does not need the floating gate drive. The auxiliary inductor is coupled with the main converter inductor, and the leakage inductor is used as the resonance inductor. Thus, all inductors of the proposed converter can be implemented on a single core. The other features of the proposed converters include no extra voltage and current stresses on the main converter semiconductor elements. Theoretical analysis for a synchronous buck converter is presented in detail, and the validity of the theoretical analysis is justified with the experimental results of a prototype buck converter with 180 W and 80 V to 30 V.

MEMS 설계를 위한 실리콘 산화막 특성 (The Characteristics of Silicon Oxides for Microelectromechanic System)

  • 강창수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.371-371
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    • 2010
  • In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the MEMS implementation with nano structure. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41{\AA}$, which have the gate area $10^{-3}cm^2$. The stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

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Survival of the Insulator under the electrical stress condition at cryogenic temperature

  • Baek, Seung-Myeong;Kim, Sang-Hyun
    • 한국초전도ㆍ저온공학회논문지
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    • 제15권4호
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    • pp.10-14
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    • 2013
  • We have clearly investigated with respect to the survival of the insulator at cryogenic temperature under the electrical stress. The breakdown and voltage-time characteristics of turn-to-turn models for point contact geometry and surface contact geometry using copper multi wrapped with polyimide film for an HTS transformer were investigated under AC and impulse voltage at 77 K. Polyimide film (Kapton) 0.025 mm thick is used for multi wrapping of the electrode. As expected, the breakdown voltages for the surface contact geometry are lower than that of the point contact geometry, because the contact area of the surface contact geometry is lager than that of the point contact geometry. The time to breakdown t50 decreases as the applied voltage is increased, and the lifetime indices increase slightly as the number of layers is increased. The electric field amplitude at the position where breakdown occurs is about 80 % of the maximum electric field value. The relationship between survival probability and the electrical stress at cryogenic temperature was evident.