• 제목/요약/키워드: stress voltage

검색결과 1,070건 처리시간 0.027초

Trap distributions in high voltage stressed silicon oxides (고전계 인가 산화막의 트랩 분포)

  • 강창수
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • 제9권5호
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    • pp.521-526
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    • 1999
  • It was investigated that traps were generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The charge state of the traps can easily be changed by application of low voltage after the stress high voltage. It determined to the relative traps locations inside the oxides ranges from 113.4$\AA$to 814$\AA$ with capacitor areas of $10^{-3}{$\mid$textrm}{cm}^2$. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The oxide charge state of traps generated by the stress high voltage contain either a positive or a negative charge.

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Heat Dissipation Analysis of High Voltage Diode Package for Microwave oven (전자레인지용 고압다이오드의 방열특성)

  • Kim, Sang-Cheol;Kim, Nam-Kyun;Bahng, Wook;Seo, Gil-Soo;Moon, Seoung-Ju;Oh, Bang-Won
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.205-208
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    • 2001
  • Steady state and transient thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage for microwave oven. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally copper wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin and epoxy with a thickness of 25$\mu\textrm{m}$ and 3,700$\mu\textrm{m}$, respectively. The chip size, thickness and material properties were very important factor for high voltage diode package. And also, thermal stress value was highest in the edge of diode and solder. So, design of edge in silicon was very important to thermal stress.

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Filtering Techniques to Reduce the Transient Voltage of High Voltage Induction Motor on H-bridge cascaded 7- level Inverte (H-Bridge 7-레벨 인버터 구동시 고압 유도전동기에서 발생하는 과도전압 저감을 위한 필터기술)

  • Kwon, Young-Mok;Kim, Jae-Chul;Kim, Young-Sung;Lee, Yang-Jin
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 한국조명전기설비학회 2005년도 춘계학술대회논문집
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    • pp.47-50
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    • 2005
  • In this paper, we investigate a filtering technique to reduce the adverse effect of long motor leads on H-bridge cascaded 7-level inverter fed ac motor drive. The switching surge voltage becomes the major cause to occur the insulation failure by serious voltage stress in the stator winding of high voltage induction motor. However, the effect of switching surge appears un seriousin high voltage induction motor than low voltage induction motor. Consequently, we demonstrated that the filter connected to the motor terminals greatly reduces the transient voltage stress and ringing, moreover we show lowers the dv/dt of the inverter switching pulse. The results of simulation show the suppression of dv/dt and the reduced peak voltage at the motor end of a long cable.

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Analysis, Design and Implementation of a Soft Switching DC/DC Converter

  • Lin, Bor-Ren
    • Journal of Power Electronics
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    • 제13권1호
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    • pp.20-30
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    • 2013
  • This paper presents a soft switching DC/DC converter for high voltage application. The interleaved pulse-width modulation (PWM) scheme is used to reduce the ripple current at the output capacitor and the size of output inductors. Two converter cells are connected in series at the high voltage side to reduce the voltage stresses of the active switches. Thus, the voltage stress of each switch is clamped at one half of the input voltage. On the other hand, the output sides of two converter cells are connected in parallel to achieve the load current sharing and reduce the current stress of output inductors. In each converter cell, a half-bridge converter with the asymmetrical PWM scheme is adopted to control power switches and to regulate the output voltage at a desired voltage level. Based on the resonant behavior by the output capacitance of power switches and the transformer leakage inductance, active switches can be turned on at zero voltage switching (ZVS) during the transition interval. Thus, the switching losses of power MOSFETs are reduced. The current doubler rectifier is used at the secondary side to partially cancel ripple current. Therefore, the root-mean-square (rms) current at output capacitor is reduced. The proposed converter can be applied for high input voltage applications such as a three-phase 380V utility system. Finally, experiments based on a laboratory prototype with 960W (24V/40A) rated power are provided to demonstrate the performance of proposed converter.

The Shift of Threshold Voltage and Subthreshold Current Curve in LDD MOSFET Degraded Under Different DC Stress-Biases (DC 스트레스에 의해 노쇠화된 LDD MOSFET에서 문턱 전압과 Subthreshold 전류곡선의 변화)

  • Lee, Myung-Buk;Lee, Jung-Il;Kang, Kwang-Nham
    • Journal of the Korean Institute of Telematics and Electronics
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    • 제26권5호
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    • pp.46-51
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    • 1989
  • The degradation phenomena induced by hot-carrier injection was studied from the shift of threshold voltage and subthreshold current curve in LDD NMOSFET degraded under different DC stress-biases. Threshold voltage shift ${Delta}V_{tex}$ defined in saturation region was separated into contri butions due to trapped oxide charge $V_{ot}$ and interface traps ${Delta}V_{it}$ generated from midgap to threshold voltage. Under th positive stress electric field (TEX>$V_g>V_d$) condition, the shift of threshold voltage was attributed to the electrons traped ar gate oxide but subthreshold swing was not negative stress electric field ($V_g) condition, holes seems to be injected positive charges so threshold voltage and subthreshold swing were increased.

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Effective Stress Modeling of Membranes Made of Gold and Aluminum Materials Used in Radio-Frequency Microelectromechanical System Switches

  • Singh, Tejinder
    • Transactions on Electrical and Electronic Materials
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    • 제14권4호
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    • pp.172-176
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    • 2013
  • Microelectromechanical system switches are becoming more and more popular in the electronics industry; there is a need for careful selection of the materials in the design and fabrication of switches for reliability and performance issues. The membrane used for actuation to change the state of an RF switch is made mostly using gold or aluminum. Various designs of membranes have been proposed. Due to the flexure-type structures, the design complexity increases, which makes stress analysis mandatory to validate the reliability and performance of a switch. In this paper, the effective stress and actuation voltage required for different types of fixed-fixed membranes is analyzed using finite element modeling. Effective measures are presented to reduce the stress and voltage.

Clamping Voltage Characteristics and Accelerated Aging Behavior of CoCrTb-doped Zn/Pr-based Varistors with Sintering Temperature

  • Nahm, Ghoon-Woo
    • Transactions on Electrical and Electronic Materials
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    • 제10권4호
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    • pp.125-130
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    • 2009
  • The clamping voltage characteristics and accelerated aging behavior of CoCrTb-doped Zn/Pr-based varistors were investigated for different sintering temperatures. The best clamping voltage characteristics were obtained for the varistors sintered at $1330^{\circ}C$, with a clamping voltage ratio (K) of 1.63 at a surge current of 5 A and 1.75 at a surge current of 10 A. The varistors sintered at $1330^{\circ}C$ exhibited the highest stability, with -0.1% in $%{\Delta}E_{1\;mA}$, -0.2% in $%{\Delta}{\alpha}$, and +15.5% in $%{\Delta}J_L$ for E-J characteristics under a stress state of 0.90 $E_{1\;mA/120^{\circ}C$ /24 h. Furthermore, it exhibited $%{\Delta}{\varepsilon}_{APP}$' of -0.7% and $%{\Delta}tan{\delta}$ of +5.7% for dielectric characteristics under the same stress state.

Performance Analysis for Passive Filter Considering Allowable Limits of Tolerance (오차의 허용범위를 고려한 수동형 필터의 특성 해석)

  • Kim, Jong-Gyeum;Kim, Il-Jung
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • 제58권1호
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    • pp.38-43
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    • 2009
  • Reactors are connected with capacitors to passive filter circuits for reducing harmonics caused by power conversion application. This passive filter frequently gets out of order by voltage and current stress. Especially filter reactor has too much voltage harmonics components, its trouble rate is higher than capacitor. In this paper, we analyzed voltage and current of reactor and capacitor used for passive filter by simulation and measurement. If reactor has a tolerance on variation of reactance value, series resonance frequency is different from originally filter design frequency and parallel resonance can be generated at the close point of the former. Because filter absorbs harmonic component of non-linear load, much of harmonic voltage has been impacted on reactor.

$S^4$-PFC AC/DC Converter To Reduce DC Bus Stress With Coupling Inductor ($S^4$-PFC에서 커플링 인덕터를 이용하여 DC 버스 스트레스를 저감시킨 AC/DC 컨버터)

  • Lee, Jang-Hyun;Kim, Tai-Woong;Lee, Sung-Palk
    • Proceedings of the KIEE Conference
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    • 대한전기학회 1999년도 하계학술대회 논문집 F
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    • pp.2515-2517
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    • 1999
  • In this paper we analysis DC bus voltage stress at high line voltage and light load in $S^4$-PFC Isolated AC/DC converter with DC bus voltage feedback using coupling in transformer. In this converter, the principle of operation and the practical problems in the design are considered. Simulation and experimental results are presented to verify the operation and performance of the $S^4$-PFC converter with DC bus voltage feedback. Experimental sets are performed in the conditions; switching frequency 100 kHz, output of 5 V, 60W, and universal line input voltage.

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A new interleaved high step up converter with low voltage stress on the main switches

  • Tohidi, Babak;Delshad, Majid;Saghafi, Hadi
    • Smart Structures and Systems
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    • 제26권4호
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    • pp.521-531
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    • 2020
  • In this paper, a new interleaved high step-up converter with low voltage stress on the switches is proposed. In the proposed converter, soft switching is provided for all switches by just one auxiliary switch, which decreases the conduction loss of auxiliary circuit. Also, the auxiliary circuit is expanded on the converter with more input branches. In the converter all main switches operate under zero voltage switching condition and auxiliary switch operate under zero current switching condition. Because of the interleaved structure, the reliability of converter increases and input current ripples decreases. The clamp capacitor in the converter not only absorb the voltage spikes across the switch due to leakage inductance, but also improve voltage gain. The proposed converter is fully analyzed and to verify the theoretical analysis, a 100 W prototype was implemented. Also, to show the effectiveness of auxiliary circuit on conduction EMI, EMI of the proposed converter comprised with hard switching counterpart.