• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.26-32
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• 1998

We have studied how the characteristics degradation between effective mobility and field effect mobility of gate channel in p-MOSFET's affects the gate channel length being follow by increased stress time and increased drain-source voltage stress. The experimental results between effective and field-effect mobility were analyzed that the measurement data are identical at the point of minimum slope in threshold voltage, the other part is different, that is, the effective mobility it the faster than the field-effect mobility. Also, It was found that the effective and field-effect mobility. Also, It was found that the effective and field-effect mobility of p-MOSFET's with short channel are increased by decreased channel length, increased stress time and increased drain-source voltage stress.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.4
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• pp.335-340
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• 2002

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4${\AA}$ and 814${\AA}$, which have the gate area $10^3cm^2$. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.60-64
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• 2020

In this study, to develop angle ring pressboards for high voltage transformers, the radius and thickness are modified under the conditions of temperature and humidity. In particular, a pressboard with a thickness of 6 mm and a radius at the angled part were investigated based on the simulation of the principal stress from the angled optimization profile shape. As a result, by the appropriate application of a higher temperature, the solid insulation can be improved to reduce the moisture content for an optimized profile angle of a high voltage transformer. This also results in the improvement of the safety factor by 25%. It is determined that the electrical insulation properties of pressboards in high voltage transformers can be enhanced by improving their properties.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.52 no.3
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• pp.133-139
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• 2003

In this paper, a new control scheme of Class-E inverter for Induction Heating (IH) Jar applications with clamped voltage characteristics using Pulse-Frequency-Modulation (PFM) is introduced. To reduce the voltage stress of switch, the proposed PFM control scheme doesn't need any auxiliary circuit in comparison to a family of Active Clamped Class-E (ACCE) inverter. It can decrease voltage stress of switch through modulation of switching frequency. The Class-E inverter using the proposed control scheme has the advantage of not only the same output power when it is compared with a Hybrid-Active Clamped Class-E (Hybrid-ACCE) inverter but also Zero-Voltage-Switching (ZVS), which are characteristics of conventional Class-E and ACCE inverter. The control principles and analysis of proposed method are explained in detail and its validity is verified through simulation and experimental results.

• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.360-363
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• 2002

In the resonant converters which can provide high efficiency and high power density, the resonant voltage stress is about $4\~5$ times the input voltage. It needs the power switch with high ratings. This is a reason why the conduction loss is increased. In this paper, it proposes the alternately zero voltage switched forward, flyback multi resonant converter topology for reducing the voltage stress using alternately zero voltage switching technique. And the proposed AT forward MRC Is experimentally considered about the loop gain with HP4194A network analyzer

• Proceedings of the KIPE Conference
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• 2003.11a
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• pp.267-270
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• 2003

In this paper, a new energy recovery circuit for AC PDP(Plasma Display Panel) is proposed to decrease a sustain voltage and voltage stress on switching elements. In the proposed circuit, two auxiliary capacitors are connected directly to the power source through switching elements and inductors when ground potential is supplied to the panel. Therefore, the voltage across auxiliary capacitors can be increased by turns over the half of the source voltage. Because the intrinsic capacitance of PDP is charged sufficiently from the auxiliary capacitors, the level of sustain voltage and the voltage stress on the switching devices are decreased. To verify the validity of the proposed energy recovery circuit, computer simulations using PSpice program are carried out.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.1
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• pp.36-40
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• 2008

Most of the low-voltage feeder are designed with approximately balanced and connected at the three phase four wire systems. However, Most of the power distribution systems' load which is composed of single or three phase are unbalanced by generating load unbalance. Unbalanced current will draw a highly unbalanced voltage. The power factor of an induction motor at rated operation is between 25 and 90%, depending on the size and speed of the motor. However, many induction motors operate below the nominal rating, resulting in poor power factor. This condition needs power factor improvement. Addition of power capacitor at the motor terminal may draw to stress due to voltage unbalance. This paper presents operation characteristics on steady states of a three-phase induction motor under unbalanced voltages with power capacitor. The existence of voltage unbalance have an effect on stress of power capacitor.

• Journal of Power Electronics
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• v.16 no.1
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• pp.74-83
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• 2016

A new family of zero-voltage-transition converters with synchronous rectification is introduced in this study. Soft switching condition for all the converter operating points is provided in the proposed converters. The reverse recovery losses of the rectifier switch body diode are also eliminated. In comparison with the main switch voltage stress, the auxiliary switch voltage stress is reduced significantly. The auxiliary switch does not need the floating gate drive. The auxiliary inductor is coupled with the main converter inductor, and the leakage inductor is used as the resonance inductor. Thus, all inductors of the proposed converter can be implemented on a single core. The other features of the proposed converters include no extra voltage and current stresses on the main converter semiconductor elements. Theoretical analysis for a synchronous buck converter is presented in detail, and the validity of the theoretical analysis is justified with the experimental results of a prototype buck converter with 180 W and 80 V to 30 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.371-371
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• 2010

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the MEMS implementation with nano structure. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41{\AA}$, which have the gate area $10^{-3}cm^2$. The stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Progress in Superconductivity and Cryogenics
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• v.15 no.4
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• pp.10-14
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• 2013

We have clearly investigated with respect to the survival of the insulator at cryogenic temperature under the electrical stress. The breakdown and voltage-time characteristics of turn-to-turn models for point contact geometry and surface contact geometry using copper multi wrapped with polyimide film for an HTS transformer were investigated under AC and impulse voltage at 77 K. Polyimide film (Kapton) 0.025 mm thick is used for multi wrapping of the electrode. As expected, the breakdown voltages for the surface contact geometry are lower than that of the point contact geometry, because the contact area of the surface contact geometry is lager than that of the point contact geometry. The time to breakdown t50 decreases as the applied voltage is increased, and the lifetime indices increase slightly as the number of layers is increased. The electric field amplitude at the position where breakdown occurs is about 80 % of the maximum electric field value. The relationship between survival probability and the electrical stress at cryogenic temperature was evident.