• The Transactions of The Korean Institute of Electrical Engineers
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• v.68 no.1
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• pp.52-60
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• 2019

In this paper, four types of insulation coils were fabricated by adding various kinds of glycols to improve the flexibility and adhesion of insulating coils in varnish dispersed with PAI / Nano Silica_15wt%. The applied voltage and frequency were 1.5 kV / 20 kHz for accelerated life evaluation. Through the 6th temperature stress level, the cause of the insulation breakdown of the coil was ignored and only the breakdown time was measured. The Arrhenius model was chosen based on the theoretical relationship between chemical reaction rate and temperature for estimating the insulation life of the coil due to accelerated thermal stress. Three types of distributions (Weibull, Lognormal, Exponential) were selected as the relationship between thermal stress model and distribution. The average insulation lifetime was estimated under the temperature stress of four types of insulation coils through the relationship between one kind of model and three kinds of distributions.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.4
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• pp.173-179
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• 2023

This paper analyzes the time-dependent dielectric breakdown(TDDB) degradation mechanism for each stress region of Peri devices manufactured by 4th generation VNAND process, and presents a complementary lifetime prediction model that improves speed and accuracy in a wider reliability evaluation region compared to the conventional model presented. SiON dielectric nMOSFETs were measured 10 times each under 5 constant voltage stress(CVS) conditions. The analysis of stress-induced leakage current(SILC) confirmed the significance of the field-based degradation mechanism in the low electric field region and the current-based degradation mechanism in the high field region. Time-to-failure(TF) was extracted from Weibull distribution to ascertain the lifetime prediction limitations of the conventional E-model and 1/E-model, and a parallel complementary model including both electric field and current based degradation mechanisms was proposed by extracting and combining the thermal bond breakage rate constant(k) of each model. Finally, when predicting the lifetime of the measured TDDB data, the proposed complementary model predicts lifetime faster and more accurately, even in the wider electric field region, compared to the conventional E-model and 1/E-model.

• Journal of the Institute of Convergence Signal Processing
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• v.3 no.3
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• pp.70-75
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• 2002

This paper proposes new single stage power factor correction (PFC) full bridge converter. The proposed converter is combined previous ZVS full bridge DC/DC converter with two inductors, two diodes, two magnetic coupling transformer for PFC. This process of power is isolated from the source and also regulate stable DC output voltage in a category. In this topology, the voltage stress of main switches is reduced by zero voltage switching. Moreover, the proposed converter doesn't need active PFC switch and auxiliarly circuits, like control and gating board, so it could decrease the size and cost and increase the efficiency.

• Journal of the Korea Society for Simulation
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• v.22 no.4
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• pp.93-98
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• 2013

In this paper, the proposed shallow trench isolation structures for high threshold voltage for very large scale and ultra high voltage integrated circuits MOSFET were simulated. Physically based models of hot-carrier stress and dielectric enhanced field of thermal damage have been incorporated into a TCAD tool with the aim of investigating the electrical degradation in integrated devices over an extended range of stress biases and ambient temperatures. As a simulation results, shallow trench structure were intended to be electric functions of passive, as device dimensions shrink, the electrical characteristics influence of proposed STI structures on the transistor applications become stronger the potential difference electric field and saturation threshold voltage.

• Journal of the Korean Society of Safety
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• v.28 no.5
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• pp.15-20
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• 2013

This paper dealt with melting characteristics of low-voltage miniature cartridge fuse used for 220 V electronic equipment. The experimental sample is low-voltage miniature cartridge fuse with rating of 250 V(3A) and size of $5{\times}20$ mm. In order to evaluate melting and scattering characteristics of the fuse, we applied to 8/20 ${\mu}s$ surge current, overload current and external thermal stress such as flame of fire. From the experimental results, the fuse element was melted and scattered by applied surge current(above 0.79 kA) and overload current(above 4.5 A). It was also attached to the inner surface of the fuse tube. The fuse element was attached as a thin film on inner surface of fuse tube when large surge current was applied. It was confirmed, however, the fuse element was not changed by external thermal stress such as flame and hot-air.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.10
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• pp.21-28
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• 2009

Power capacitor has been used to compensate for the low power factor of inductive load and to reduce harmonics generated by the power conversion device with reactor. Power quality is mainly referred to the voltage quality and it is very important for the stable operation of load. But if voltage rms is temporary changed, it acts on capacitor as an electrical stress. In this paper, we analyzed that capacitor can be given by voltage, current and capacity's variance under the sag and swell condition. If reactor is connected at capacitor, sag can be aside from the question. But it can act an amount of stress on capacitor in the swell region.

• Proceedings of the KIPE Conference
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• 2012.11a
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• pp.88-90
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• 2012

A study on an integrated single stage AC/DC converter is presented in this paper. The input current can be controlled by the auxiliary winding($L_{aux}$), auxiliary primary winding($N_3$), and the boost inductor($L_B$) which are designed to operate in discontinuous conduction mode(DCM) to reduced the total harmonic distortion(THD) of input current. The auxiliary primary winding($N_3$) is critically selected in order to compress the input capacitor voltage($V_{in}$) as well as to reduce the current stress of the switch(Q). Low total harmonic distortion(THD), low input voltage($V_{in}$) in universal input voltage($V_{AC}$), low current stress at the switching device and high efficiency are the main consideration keys in this design to achieve high performance system with low cost of single stage AC/DC converter. A 30W single stage AC/DC prototype converter is under study.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1701-1703
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• 2006

Here we describe a novel driving scheme in the form of negative AC bias stress (NAC) to compensate shift in the threshold voltage for hydrogenated amorphous silicon (${\alpha}$-Si:H) thin film transistor (TFT) for AMOLED applications. This scheme preserves the threshold voltage shift of ${\alpha}$-Si:H TFT for infinitely long duration of time(>30,000 hours) and thereby overall performance, without using any additional TFTs for compensation. We briefly describe about the possible driving schemes in order to implement for real time AMOLED applications. We attribute most of the results based on concept of plugging holes and electrons across the interface of the gate insulator in a controlled manner.

• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.383-388
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• 2006

The varistor properties and DC accelerated aging characteristics of $ZnO-Pr_{6}O_{11}-CoO-Cr_{2}O_{3}$-based varistors were investigated at different $La_{2}O_3$ contents in the range of $0{\sim}2.0mol%$. The varistors doped with 0.5 mol% $La_{2}O_3$ exhibited good nonlinearity, with 81.6 in nonlinear coefficient. Increasing the $La_{2}O_3$ content further to 2.0 mol% caused the sintered density to increase, and the breakdown voltage and nonlinearity to decrease abruptly. The varistors with 0.5 mol% $La_{2}O_3$ exhibited the high electrical stability, with -1.14% in variation rate of breakdown voltage, -3.7% in variation rate of nonlinear coefficient, and +100% in variation rate of leakage current for specified DC accelerated aging stress condition (95% of breakdown voltage/$150^{\circ}C$/24 h).

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.6
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• pp.653-659
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• 2015

The aim of this study is to develop a technique for the accelerated life test of the capacitor in a propulsion control device of a traction inverter used for a high-speed train. Using this technique, the accelerated life test can possibly estimate the life cycle of a capacitor under various temperature conditions and irregularly applied voltage. The accelerated life test is conducted for the capacitor of the traction inverter. The common proceedings of this test are selection of failure mechanism, determination of accelerated stress, range determination of the accelerated stress, determination of the test condition, and distribution and determination of the sample. From this result, the continuous applied voltage was not considered for the acceleration factors anymore. Therefore, the final result having an acceleration factor of 9.4 (= 13,626/1,445) was observed. Furthermore, the life-shortening acceleration effect for the irregular applied voltage condition can be applied to various situations.