• 제목/요약/키워드: step coverage

검색결과 185건 처리시간 0.026초

PECVD공정 조건의 질화실리콘 박막특성에 대한 효과 (Effects of PECVD Process Parameters on the Characteristics of SiN Thin Film)

  • 이종무;이철진
    • 한국세라믹학회지
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    • 제24권2호
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    • pp.170-178
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    • 1987
  • Changes of the properties of PECVD-SiN film with the variation of deposition process parameters were investigated and optimum process parameters were determined. The refractive index of the film increased with increasing substrate temperature and pressure, and decreasing rf-power, NH3/SiH4 gas ratio and total gas flow. BHF etch rate and deposition rate show a decreasing tendency with increasing refractive index. The step coverage of the film was not affected much by deposition rate and pressure, but improved apparently with increasing rf-power and NH3/SiH4 gas ratio. Also the optimum process parameters were determined by considering the characteristic properties as well as thickness uniformity of films. The refractive index of the film deposited under this condition was 2.06.

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한국의 전통성에 기초한 국내대학 교육현황과 의식조사에 관한 연구 - 4년제 대학의 실내.주거디자인 관련학과를 중심으로 - (A Study on the Education System and Awareness Survey Based on the Korean Identity - Focused on the Interior Design Programs in Domestic Universities -)

  • 천진희;오혜경
    • 한국실내디자인학회논문집
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    • 제27호
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    • pp.76-85
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    • 2001
  • The objective of this study is to evaluate the current theory education system and students'awareness about Korean identity by analysing four-year curricula of Interior design programs in domestic universities and questionnaires of 468 junior and senior students who have taken the history of interior design. This study is the first step of continuous research for establishing new model of education related to Korean tradition. Following three issues - $\circled1$degree of knowledge and awareness of Korean university students majoring interior design about Korean identity, $\circled2$extent of the coverage of theoretical education for korean tradition in curricula of interior programs, $\circled3$extent of the application of Korean identity as a design theme in studio classes - were mainly analysed.

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An Exploration on the Use of Data Envelopment Analysis for Product Line Selection

  • Lin, Chun-Yu;Okudan, Gul E.
    • Industrial Engineering and Management Systems
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    • 제8권1호
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    • pp.47-53
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    • 2009
  • We define product line (or mix) selection problem as selecting a subset of potential product variants that can simultaneously minimize product proliferation and maintain market coverage. Selecting the most efficient product mix is a complex problem, which requires analyses of multiple criteria. This paper proposes a method based on Data Envelopment Analysis (DEA) for product line selection. Data Envelopment Analysis (DEA) is a linear programming based technique commonly used for measuring the relative performance of a group of decision making units with multiple inputs and outputs. Although DEA has been proved to be an effective evaluation tool in many fields, it has not been applied to solve the product line selection problem. In this study, we construct a five-step method that systematically adopts DEA to solve a product line selection problem. We then apply the proposed method to an existing line of staplers to provide quantitative evidence for managers to generate desirable decisions to maximize the company profits while also fulfilling market demands.

Effects of nano silver contents on screen printed-etched gate electrodes and electrical characteristics of OTFTs

  • Lee, Mi-Young;Park, Ji-Eun;Song, Chung-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.917-919
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    • 2009
  • Effects of nano-silver contents(15~50wt%) on screen printed-etched gate electrodes and electrical characteristics of OTFTs were investigated. As Ag contents increased, the screen-printed film was transferred exactly without spreading and obtained the densely-packed layer with a stable and excellent conductivity but, its thickness was increased and surface became rougher. It was found that the leakage current of MIM devices and off-state currents of OTFTs became larger due to poor step coverage of PVP dielectric layer on the thick and rough gate electrodes for nano-Ag inks with Ag contents more than 30wt%.

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화염법을 이용한 Pt/C 촉매 제조 (Pt Coating on Flame-Generated Carbon Particles)

  • 최인대;이동근
    • 대한기계학회논문집B
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    • 제33권2호
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    • pp.116-123
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    • 2009
  • Carbon black, activated carbon and carbon nanotube have been used as supporting materials for precious metal catalysts used in fuel cell electrodes. One-step flame synthesis method is used to coat 2-5nm Pt dots on flame-generated carbon particles. By adjusting flame temperature, gas flow rates and resident time of particles in flame, we can obtain Pt/C nano catalyst-support composite particles. Additional injection of hydrogen gas facilitates pyrolysis of Pt precursor in flame. The size of as-incepted Pt dots increases along the flame due to longer resident time and sintering in high temperature flame. Surface coverage and dispersion of the Pt dots is varied at different sampling heights and confirmed by Transmission electron microscopy (TEM), Energy-dispersive spectra (EDS) and X-ray diffraction (XRD). Crystalinity and surface bonding groups of carbon are investigated through X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy.

저 염소 TiN필름 제조를 위한 CVD 반응기 내의 유동해석

  • 임익태;전기영
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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    • pp.1-6
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    • 2003
  • Flow modulation chemical vapor deposition process has been reported as an alternative way to obtain low resistivity, low residual chlorine content and good step-coverage titanium nitride film. Flow and concentration characteristics in a vertical FMCVD reactor are analyzed by using computational fluid dynamics method. The results show that 1.0 second as Cl reduction period is too short and there is still $TiCl_4$ gas above the holder at the end of the period. Time variation of $TiCl_4$ gas concentration on the holder shows that at least 3.0 second is necessary as Cl reduction time for the sake of film characteristics.

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BPSG막의 Flow 특성 (Flow Characteristics of the BPSG Film)

  • 홍성현;이종무;송성해
    • 한국세라믹학회지
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    • 제26권3호
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    • pp.381-389
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    • 1989
  • Effects of annealing temperature, time, and atmospehre on the flow characteristics of Atmospheric Pressure Chemical Vapor Deposition-borophosphosilicate glass were investigated. Stable step coverage can be obtained by annealing the BPSG film at 90$0^{\circ}C$ for 30 minutes in N2 atmosphere, but further heat treatment isnot effective. Flow characteristics of the BPSG film was better in steam atmosphere than in N2 atmosphere, and the factors which cause it were analyzed. The concentration of boron in the BPSG film was measured pretty accurately by FTIR spectrum. Boron content in the BPSG film was reduced by annealing treatment. The decrement of boron was greater in steam atmosphere than in the N2 atmosphere. Also it was found from the FTIR spectroscopic analysis that PH3 inhibited the oxidation of B2H6.

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VHF-PECVD OF Ti/TiN WITH SILANE REDUCTION PROCESS

  • Mizuno, Shigeru
    • 한국표면공학회지
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    • 제29권5호
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    • pp.350-356
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    • 1996
  • This paper presents VHF-Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD) of Ti/TiN with silne reduction process, using $TiCl_4$ source. VHF plasma, which is denser than a conventional RF plasma, produces a large number of radicals. Silane reduction process, which supplies silane radicals, more promotes dissociation of Ti-Cl bond than a conventional hydrogen reduction process. therefore, the VHF-PECVD with silane reduction process forms high quality Ti/TiN films, which have low level of Cl content(<0.2 at.%). In result, the resistivity for Ti or TiN is less than 200$\mu$$\Omega$cm. The surface morphology of Ti film is very smooth. The structure of TiN film is amorphous. Furthermore, excellent step coverage for the films is obtained.

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Laser CVD법에 의한 평탄화 층간 절연막 형성에 관한 연구 (A Study on Planarized Formation of Inter-Level Dielectric Films by Laser CVD Method)

  • 이계신;박근영;이한신;홍성훈;허윤종;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 하계학술대회 논문집 B
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    • pp.1271-1273
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    • 1993
  • $SiO_2$ and SiON films are formed by Laser CVD for inter-level dielectrics in submicron VLSI. This technique is noticeable that film formation can be done at low temperatures, below $300^{\circ}C$ with less damage. An ArF Excimer Laser with wave length of 193nm is used to excite and dissociate reactant gases. After film formation growth rate, refractive index, I-V curve, and step coverage characteristics of the films were evaluated.

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광화학기상성장법에 의한 Si 기판상에서의 TaO$_{x}$ 박막 제작에 관한 연구 (Fabrication of TaOx Thin Film on Si-Substrate by Photo-CVD Method)

  • 한봉명;김수용;김경식
    • 한국표면공학회지
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    • 제25권3호
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    • pp.126-132
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    • 1992
  • Recent VLSI requires materials with high dielectric constant in order to reduce their storage capacitor areas. Thin TaOx film was formed from Ta(OCH3)5 by photo-CVD method at a low temperature. The result shows that the film obtained by photo-CVD method is this study has good step coverage, high dielectric constant (20-25) and low leakage current. The high strong peaks from Ta(4f), Ta(4d), and O(ls) levels were observed by XPS analysis. From the diffraction pattern and TEM prcture analysis, the TaOx thin film was observed to be amorphous. This kind of the deposition method could be considered to be a very promising method applied to VLSI.

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