• Journal of the Korean Ceramic Society
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• v.24 no.2
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• pp.170-178
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• 1987

Changes of the properties of PECVD-SiN film with the variation of deposition process parameters were investigated and optimum process parameters were determined. The refractive index of the film increased with increasing substrate temperature and pressure, and decreasing rf-power, NH3/SiH4 gas ratio and total gas flow. BHF etch rate and deposition rate show a decreasing tendency with increasing refractive index. The step coverage of the film was not affected much by deposition rate and pressure, but improved apparently with increasing rf-power and NH3/SiH4 gas ratio. Also the optimum process parameters were determined by considering the characteristic properties as well as thickness uniformity of films. The refractive index of the film deposited under this condition was 2.06.

• Korean Institute of Interior Design Journal
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• no.27
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• pp.76-85
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• 2001

The objective of this study is to evaluate the current theory education system and students'awareness about Korean identity by analysing four-year curricula of Interior design programs in domestic universities and questionnaires of 468 junior and senior students who have taken the history of interior design. This study is the first step of continuous research for establishing new model of education related to Korean tradition. Following three issues - $\circled1$degree of knowledge and awareness of Korean university students majoring interior design about Korean identity, $\circled2$extent of the coverage of theoretical education for korean tradition in curricula of interior programs, $\circled3$extent of the application of Korean identity as a design theme in studio classes - were mainly analysed.

• Industrial Engineering and Management Systems
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• v.8 no.1
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• pp.47-53
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• 2009

We define product line (or mix) selection problem as selecting a subset of potential product variants that can simultaneously minimize product proliferation and maintain market coverage. Selecting the most efficient product mix is a complex problem, which requires analyses of multiple criteria. This paper proposes a method based on Data Envelopment Analysis (DEA) for product line selection. Data Envelopment Analysis (DEA) is a linear programming based technique commonly used for measuring the relative performance of a group of decision making units with multiple inputs and outputs. Although DEA has been proved to be an effective evaluation tool in many fields, it has not been applied to solve the product line selection problem. In this study, we construct a five-step method that systematically adopts DEA to solve a product line selection problem. We then apply the proposed method to an existing line of staplers to provide quantitative evidence for managers to generate desirable decisions to maximize the company profits while also fulfilling market demands.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.917-919
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• 2009

Effects of nano-silver contents(15~50wt%) on screen printed-etched gate electrodes and electrical characteristics of OTFTs were investigated. As Ag contents increased, the screen-printed film was transferred exactly without spreading and obtained the densely-packed layer with a stable and excellent conductivity but, its thickness was increased and surface became rougher. It was found that the leakage current of MIM devices and off-state currents of OTFTs became larger due to poor step coverage of PVP dielectric layer on the thick and rough gate electrodes for nano-Ag inks with Ag contents more than 30wt%.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.2
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• pp.116-123
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• 2009

Carbon black, activated carbon and carbon nanotube have been used as supporting materials for precious metal catalysts used in fuel cell electrodes. One-step flame synthesis method is used to coat 2-5nm Pt dots on flame-generated carbon particles. By adjusting flame temperature, gas flow rates and resident time of particles in flame, we can obtain Pt/C nano catalyst-support composite particles. Additional injection of hydrogen gas facilitates pyrolysis of Pt precursor in flame. The size of as-incepted Pt dots increases along the flame due to longer resident time and sintering in high temperature flame. Surface coverage and dispersion of the Pt dots is varied at different sampling heights and confirmed by Transmission electron microscopy (TEM), Energy-dispersive spectra (EDS) and X-ray diffraction (XRD). Crystalinity and surface bonding groups of carbon are investigated through X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.1-6
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• 2003

Flow modulation chemical vapor deposition process has been reported as an alternative way to obtain low resistivity, low residual chlorine content and good step-coverage titanium nitride film. Flow and concentration characteristics in a vertical FMCVD reactor are analyzed by using computational fluid dynamics method. The results show that 1.0 second as Cl reduction period is too short and there is still $TiCl_4$ gas above the holder at the end of the period. Time variation of $TiCl_4$ gas concentration on the holder shows that at least 3.0 second is necessary as Cl reduction time for the sake of film characteristics.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.381-389
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• 1989

Effects of annealing temperature, time, and atmospehre on the flow characteristics of Atmospheric Pressure Chemical Vapor Deposition-borophosphosilicate glass were investigated. Stable step coverage can be obtained by annealing the BPSG film at 90$0^{\circ}C$ for 30 minutes in N2 atmosphere, but further heat treatment isnot effective. Flow characteristics of the BPSG film was better in steam atmosphere than in N2 atmosphere, and the factors which cause it were analyzed. The concentration of boron in the BPSG film was measured pretty accurately by FTIR spectrum. Boron content in the BPSG film was reduced by annealing treatment. The decrement of boron was greater in steam atmosphere than in the N2 atmosphere. Also it was found from the FTIR spectroscopic analysis that PH3 inhibited the oxidation of B2H6.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.350-356
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• 1996

This paper presents VHF-Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD) of Ti/TiN with silne reduction process, using $TiCl_4$ source. VHF plasma, which is denser than a conventional RF plasma, produces a large number of radicals. Silane reduction process, which supplies silane radicals, more promotes dissociation of Ti-Cl bond than a conventional hydrogen reduction process. therefore, the VHF-PECVD with silane reduction process forms high quality Ti/TiN films, which have low level of Cl content(<0.2 at.%). In result, the resistivity for Ti or TiN is less than 200$\mu$$\Omega$cm. The surface morphology of Ti film is very smooth. The structure of TiN film is amorphous. Furthermore, excellent step coverage for the films is obtained.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1271-1273
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• 1993

$SiO_2$ and SiON films are formed by Laser CVD for inter-level dielectrics in submicron VLSI. This technique is noticeable that film formation can be done at low temperatures, below $300^{\circ}C$ with less damage. An ArF Excimer Laser with wave length of 193nm is used to excite and dissociate reactant gases. After film formation growth rate, refractive index, I-V curve, and step coverage characteristics of the films were evaluated.

• Journal of the Korean institute of surface engineering
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• v.25 no.3
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• pp.126-132
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• 1992

Recent VLSI requires materials with high dielectric constant in order to reduce their storage capacitor areas. Thin TaOx film was formed from Ta(OCH3)5 by photo-CVD method at a low temperature. The result shows that the film obtained by photo-CVD method is this study has good step coverage, high dielectric constant (20-25) and low leakage current. The high strong peaks from Ta(4f), Ta(4d), and O(ls) levels were observed by XPS analysis. From the diffraction pattern and TEM prcture analysis, the TaOx thin film was observed to be amorphous. This kind of the deposition method could be considered to be a very promising method applied to VLSI.