• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.549-552
• /
• 1987

TO INCREASE THE CELL CAPACITANCE Of SMALL GEOMETRY DRAMS. HIGH DIELECTRIC MATERIAL HAS BEEN USED RECENTLY. THE PURPOSE Of THIS WORK IS TO INVESTIGATE THE STRUCTURAL AND ELECTRICAL CHARACTERISTICS Of SiO2/Si3N4/SiO2 STACKED FILM UTILIZING HIGH DIELECTRIC MATERIAL Si3N4(${\epsilon}=7.5$). IN RESULT, THE DIELECTRIC CONSTANT Of STACKED FILM IS 4.0 - 5.0 AND CAPACITANCE AND BREAKDOWN FIELD WERE MORE INCREASED THAN THOSE Of SiO2 FILM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.448-451
• /
• 2000

Normal zone propagation(NZP) characteristics were investigated on Ag sheathed Bi-2223 tape and cylindrical stacked conductor. Normal zone propagation(N2P) experiments with tape were conducted with refrigerator in temperature from 45 K to 77 K, 0 T. Cylindrical stacked conductor was molding with epoxy and experiments were conducted with adiabatic condition in $LN_2$. NZP velocities of tape with two condition of DC and AC were almost same at each temperature. NZP velocities of cylindrical stacked conductor were 1.9-2.4 cdsec in $LN_2$. Numerical analysis was carried out by a one-dimensional heat balance equation. As a result, simulated results of NZP velocity with Bi-2223 tape were similar to experimental results in DC.

• Journal of IKEEE
• /
• v.22 no.4
• /
• pp.1088-1092
• /
• 2018

In this paper, we propose a dual-mode frequency tripler using push-push and stacked FET structures. The proposed circuit can operate either in frequency multiplier mode or in amplifier mode. In the frequency multiplier mode, push-push frequency multiplication is achieved by allowing input signals with particular phase shifts. In the amplifier mode, the device operates as a distributed amplifier to obtain high gain. Also both modes were designed using stacked FET structure. The designed circuit showed frequency tripled output power of 9.7 dBm at 2.4 GHz with the input at 800 MHz. On the other hand, in the amplifier mode, the device showed 8.9 dB of gain to generate 19.5 dBm at 800 MHz.

• Progress in Superconductivity and Cryogenics
• /
• v.11 no.4
• /
• pp.25-28
• /
• 2009

In order to apply superconducting electric machineries such as a Superconducting Fault Current Limiter (SFCL) to the power grid, the single module should be connected in series to have reasonable size. Superconducting tapes in the module also should be stacked to satisfy requirements such as large operation current of the power grid. This is because a single superconducting tape has restricted applicable current capacity. Moreover especially in SFCL at the fault, there should be equal voltage distribution in series-connected SFCL modules. In this paper, we investigated the voltage distribution in fault current of series-connected YBCO coated conductors (CC). Depending on characteristics of the CC samples such as critical current, even voltage distribution could be achieved or not. In addition, the effect of stacked CC on the change of voltage distribution comparing to non-stack cases in series connection was confirmed by experiments. As the CC stacked, voltage difference could be reduced.

• Progress in Superconductivity and Cryogenics
• /
• v.9 no.1
• /
• pp.27-31
• /
• 2007

For large power applications, multi-stacked tape should be used because single tape is limited in flowing demanded current capacity. Besides insulation between layers is needed for safe operation because high voltages are generated in those applications. In this study, considering those situations which mentioned above, we measure the magnetization loss in several multi-stacked tape samples having the different insulation thicknesses and various packing numbers of tape by external magnetic field having various incidence angles.

• Journal of IKEEE
• /
• v.20 no.3
• /
• pp.279-284
• /
• 2016

This paper presents a two stage L-band power amplifier realized with a $0.32{\mu}m$ Silicon-On-Insulator (SOI) CMOS technology. To overcome a low breakdown voltage limit of MOSFET, stacked-FET structures are employed, where three transistors in the first stage amplifier and four transistors in the second stage amplifier are connected in series so that their output voltage swings are added in phase. The stacked-FET structures enable the proposed amplifier to achieve a 21.5 dB small-signal gain and 15.7 dBm output 1-dB compression power at 1.9 GHz with a 122 mA DC current from a 4 V supply. The amplifier delivers a 19.7 dBm. This paper presents a two stage L-band power amplifier realized with a $0.32{\mu}m$ Silicon-On-Insulator (SOI) CMOS technology. To overcome a low breakdown voltage limit of MOSFET, stacked-FET structures are employed, where three transistors in the first stage amplifier and four transistors in the second stage amplifier are connected in series so that their output voltage swings are added in phase. The stacked-FET structures enable the proposed amplifier to achieve a 21.5 dB small-signal gain and 15.7 dBm output 1-dB compression power at 1.9 GHz with a 122 mA DC current from a 4 V supply. The amplifier delivers a 19.7 dBm saturated output power with a 16 % maximum Power Added Efficiency (PAE). A bond wire fine tuning technology enables the amplifier a 23.67 dBm saturated output power with a 20.4 % maximum PAE. The die area is $1.9mm{\times}0.6mm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.381-382
• /
• 2007

IZO/Ag/IZO (IAI) anode films for flexible organic light emitting diodes (OLEDs) were grown on PC (polycarbonate) substrate using DC sputter (IZO) and thermal evaporator (Ag) systems as a function of Ag thickness. To investigate electrical and optical properties of IAI stacked films, 4-point probe and UV/Vis spectrometer were used, respectively. From a IAI stacked film with 12nm-thick Ag, sheet resistance of $6.9\;{\Omega}/{\square}$ and transmittance of above 82 % at a range of 500-550 nm wavelength were obtained. In addition, structural and surface properties of IAI stacked films were analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscopy), respectively. Moreover, IAI stacked films showed dramatically improved mechanical properties when subjected to bending both as a function of number of cycles to a fixed radius. Finally, OLEDs fabricated on both flexible IAI stacked anode and conventional ITO/Glass were fabricated and, J-V-L characteristics of those OLEDs were compared by Keithley 2400.

• Computers and Concrete
• /
• v.31 no.5
• /
• pp.385-394
• /
• 2023

Displacement is an important element for evaluating the stability and failure mechanism of hydraulic structures. Digital image correlation (DIC) is a useful technique to measure a three-dimensional displacement field using two cameras without any contact with test material. The objective of this study is to evaluate the behavior of stacked geotextile tubes using the DIC technique. Geotextile tubes are stacked to build a small-scale temporary dam model to exclude water from a specific area. The horizontal and vertical displacements of four stacked geotextile tubes are monitored using a dual camera system according to the upstream water level. The geotextile tubes are prepared with two different fill materials. For each dam model, the interface layers between upper and lower geotextile tubes are either unreinforced or reinforced with a cementitious binder. The displacement of stacked geotextile tubes is measured to analyze the behavior of geotextile tubes. Experimental results show that as upstream water level increases, horizontal and vertical displacements at each layer of geotextile tubes initially increase with water level, and then remain almost constant until the subsequent water level. The displacement of stacked geotextile tubes depends on the type of fill material and interfacial reinforcement with a cementitious binder. Thus, the proposed DIC technique can be effectively used to evaluate the behavior of a hydraulic structure, which consists of geotextile tubes.

• 한국초전도학회:학술대회논문집
• /
• v.16
• /
• pp.69-69
• /
• 2006

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2011.06a
• /
• pp.37-38
• /
• 2011