• Bulletin of the Korean Chemical Society
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• 제32권2호
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• pp.467-471
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• 2011

Spin exchange interactions of $(C_2N_2H_{10})[Fe(HPO_3)F_3]$ were examined by performing a spin dimer analysis based on extended Huckel tight binding method and a mapping analysis based on first principles density functional theory. Spin exchange interactions occur through the super-superexchange paths $J_1$ and $J_2$ in $(C_2N_2H_{10})[Fe(HPO_3)F_3]$. In the super-superexchange path $J_2$ magnetic orbital interactions between eg-block levels are much stronger than those from $t_{2g}$-block levels. Both electronic structure calculations show that the spin exchange interaction through the super-superexchange path $J_2$ is much stronger than that of $J_1$.

• 한국재료학회지
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• 제14권2호
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• pp.94-100
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• 2004

We have investigated the magnetic domain structure and the thermal stability of magnetotransport properties of IrMn biased spin-valves containing Co, CoFe and NiFe. The magnetic domain structures were imaged using a magneto-optical indicator film(MOIF) technique. To investigate the thermal stability, magnetoresistance(MR) was measured at annealing temperature(TANN) and room temperature($T_{RT}$) followed by the annealing. Domain imaging reveal that the increase of annealing temperature led to changes in the exchange coupling between the two ferromagnet(FM) layers through nonmagnetic layer rather than between FM and antiferromagnet. unlike the NiFe biased IrMn spin valve with large domains, MOIF pictures of Co and CoFe biased IrMn spin valve structures show the formation of many small microdomains. The magnetic structure, as revealed by the domain images, appeared unchanged while the MR dropped dramatically. From the combined giant magnetoresistance(GMR) and MOIF results, it was apparent that the decrease of MR ratio was not related to the spin valve magnetic structure up to about $350^{\circ}C$($T_{RT}$ ).

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2013년도 자성 및 자성재료 국제학술대회
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• pp.122-122
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• 2013

• Bulletin of the Korean Chemical Society
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• 제33권7호
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• pp.2338-2340
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• 2012

The spin exchange parameters of $VOSb_2O_4$ were evaluated by performing energy-mapping analysis based on density functional calculations. The spin exchange interaction between the nearest-neighbor $V^{4+}$ ions is strongly antiferromagnetic while other interactions are negligible. Thus, the magnetic structure of $VOSb_2O_4$ is best described by a spin-1/2 Heisenberg antiferromagnetic chain with no spin frustration.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2015년도 자성 및 자성재료 국제학술대회
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• pp.107-108
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• 2015

• 대한수학회지
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• 제52권5호
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• pp.1037-1049
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• 2015

It is well-known that the spectrum of a $spin^{\mathbb{C}}$ Dirac operator on a closed Riemannian $spin^{\mathbb{C}}$ manifold $M^{2k}$ of dimension 2k for $k{\in}{\mathbb{N}}$ is symmetric. In this article, we prove that over an odd-dimensional Riemannian product $M^{2p}_1{\times}M^{2q+1}_2$ with a product $spin^{\mathbb{C}}$ structure for $p{\geq}1$, $q{\geq}0$, the spectrum of a $spin^{\mathbb{C}}$ Dirac operator given by a product connection is symmetric if and only if either the $spin^{\mathbb{C}}$ Dirac spectrum of $M^{2q+1}_2$ is symmetric or $(e^{{\frac{1}{2}}c_1(L_1)}{\hat{A}}(M_1))[M_1]=0$, where $L_1$ is the associated line bundle for the given $spin^{\mathbb{C}}$ structure of $M_1$.

• Journal of Magnetics
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• 제7권1호
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• pp.4-8
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• 2002

The magnetoresistance (MR) and the magnetization reversal of a lateral spin-injection device based on a spin-polarized field effect transistor (spin FET) have been investigated. The device consists of a two-dimensional electron gas (2DEG) system in an InAs single quantum well (SQW) and two ferromagnetic $(Ni_{80}Fe_{20})$ contacts: all injector (source) and a detector (drain). Spin-polarized electrons are injected from the first contact and, after propagating through the InAs SQW are collected by the second contact. By engineering the shape of the permalloy contacts, we were able to observe distinct switching fields $(H_c)$ from the injector and the collector by using scanning Kerr microscopy and MR measurements. Magneto-optic Kerr effect (MOKE) hysteresis loops demonstrate that there is a range of magnetic field (20~60 Oe), at room temperature, over which the magnetization in one contact is aligned antiparallel to that in the other. The MOKE results are consistent with the variation of the magnetoresistance in the spin-injection device.

• Bulletin of the Korean Chemical Society
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• 제35권11호
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• pp.3299-3302
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• 2014

The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ($[(Et)_3NH]^+[In(SCOCH_3)_4]^-$; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide ($SiO_2$) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of $10.1cm^2V^{-1}s^{-1}$ at a curing temperature of $500^{\circ}C$, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

• Journal of Magnetics
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• 제16권4호
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• pp.328-331
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• 2011

Here, we describe a dual spin valve structure with distinct switching fields for two pinned layers. A device with this structure has a staircase of three distinct magnetoresistive states. The multiple resistance states are achieved by controlling the exchange coupling between two ferromagnetic pinned layers and two adjacent anti-ferromagnetic pinning layers. The maximum magnetoresistance ratio is 7.9% for the current-perpendicular-to-plane and 7.2% for the current-in-plane geometries, with intermediate magnetoresistance ratios of 3.9% and 3.3%, respectively. The requirements for using this exchange-biased stack as a three-state memory device are also discussed.

• Journal of Magnetics
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• 제14권4호
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• pp.168-171
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• 2009

We propose a new type of spin torque nano-oscillator structure with an exchange- biased free rotating layer. The proposed spin torque nano-oscillator consists of a fixed layer and a free rotating layer with an additional anti-ferromagnetic layer, which leads to an exchange bias in the free rotating layer. The spin dynamics of the exchange-biased free rotating layer can be described as an additional exchange field because the exchange bias manifests itself by the existance of a finite exchange bias field. The exchange bias field plays a similar role to that of a finite external field. Hence, microwave generation can be achieved without an external field in the proposed structure.