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http://dx.doi.org/10.4283/JMAG.2011.16.4.328

Multilevel Magnetization Switching in a Dual Spin Valve Structure  

Chun, B.S. (Korea Research Institute of Standards and Science, Division of Industrial Metrology)
Jeong, J.S. (School of Electrical and Computer Engineering, University of Seoul)
Publication Information
Abstract
Here, we describe a dual spin valve structure with distinct switching fields for two pinned layers. A device with this structure has a staircase of three distinct magnetoresistive states. The multiple resistance states are achieved by controlling the exchange coupling between two ferromagnetic pinned layers and two adjacent anti-ferromagnetic pinning layers. The maximum magnetoresistance ratio is 7.9% for the current-perpendicular-to-plane and 7.2% for the current-in-plane geometries, with intermediate magnetoresistance ratios of 3.9% and 3.3%, respectively. The requirements for using this exchange-biased stack as a three-state memory device are also discussed.
Keywords
GMR spin valve; multi-bit memory; dual spin valve; current-perpendicular-to-plane GMR;
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