• Journal of the Korean Magnetics Society
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• v.23 no.6
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• pp.184-187
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• 2013

The influence of insertion of an ultra-thin Cu-Phthalocyanine (CuPc) between MgO barrier and ferromagnetic layer in magnetic tunnel juctions (MTJs) was investigated. In order to understand the relation between the electronic and structural properties of Fe${\backslash}$MgO${\backslash}$CuPc, the surface (or interface) analysis was carried out systematically by using spin polarized metastable He de-excited spectroscopy for the CuPc films grown on the Si(001)${\backslash}$5 nm MgO(001)${\backslash}$7 nm Fe(001)${\backslash}$1.6 nm MgO(001) multilayer structure as the thickness of CuPc increases from 0 to 5 nm. In particular, for the 1.6 nm CuPc surface, a rather strong spin asymmetry between up- and down-spin band appears while it becomes weaker or disappears for the CuPc films thinner or thicker than ~1.6 nm. Our results emphasize the importance of the interfacial electronic properties of organic layers in the spin transport of the hybrid MTJs.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.22-25
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• 2007

In this research, magnetic properties of spin valve structures using IrMn layers as antiferromagnetic were studied depending on the thickness of the pinned layer. The spin valve structure was Si substrate/$SiO_2(2,000\;{\AA})/Mo(17\;{\AA})NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(t\;{\AA})/Ta(25\;{\AA})$. Also, Mo film was deposited on Si substrates and the thermal annealing effect was analyzed. The resistivity of the Mo film was increased as an annealing temperature was increased up to $600^{\circ}C$. The variations of MR ratio were related with magnetic exchange coupling field of the spin valve structures for various IrMn pinned layer thickness up to 130 ${\AA}$. MR ratio and $H_{ex}$ of spin valves was about 9.05% and 277.5 Oe when the thickness of the IrMn pinned layer was $32.5\;{\AA}(t=32.5\;{\AA})$. It was increased to 9.65% and 337.5 Oe for $t=65\;{\AA}$. For $t=97.5\;{\AA}$, the MR ratio and Hex decreased to 8.2% and 285 Oe, and further decrease was observed up to $t=130\;{\AA}$.

• Journal of the Korean Magnetics Society
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• v.27 no.4
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• pp.115-122
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• 2017

The antiferromagnet IrMn based four different GMR-SV multilayers on Corning glass were prepared by using ion beam deposition and DC magnetron sputtering system. The magnetoresistance (MR) properties for single-type and dual-type GMR-SV multilayer films were investigated through the measured major and minor MR curves. The exchange bias coupling field ($H_{ex}$) and coercivity ($H_c$) of pinned layer, the $H_c$ and interlayer exchange coupling field ($H_{int}$) of free layer for the dual-type structure GMR-SV multilayer films consisted of top IrMn layer were 410 Oe, 60 Oe, 1.6 Oe, and 7.0 Oe, respectively. The minor MR curve of two free layers was performed the squarelike feature having a MR ratio of 8.7 % as the sum of 3.7 % and 5.0 %. The value of average magnetic field sensitivity (MS) was maintained at 2.0 %/Oe. Also, the magnetoresistance properties of the single-type and dual-type structure GMR-SV multilayer films consisted of bottom IrMn layer were decreased more than those of top IrMn layer. Two antiparallel states of magnetization spin arrays of the pinned and free layers in the dual-type GMR-SV multilayer films occurred the maximum MR value by the effect of spin dependence scattering.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.28-33
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• 2006

La substituted perovskite $BiFeO_3$ have been prepared by a sol-gel method. Magnetic and structural properties of the powders were characterized with Mossbauer spectroscopy, XRD, SEM, and TG-DTA. The crystal structure is found to be a rhombohedrally distorted perovskite structure with the lattice constant $\alpha=3.985{\AA}\;and\;\alpha=89.5^{\circ}.\;Bi_{2/3}La_{1/3}FeO_3$ powders that were annealed at and above $600^{\circ}C$ have a single-phase perovskite structure. However, powders annealed at $900^{\circ}C$ have a typical perovskite structure with small amount of $Bi_2O_3$ phase. The Neel temperature of $Bi_{2/3}La_{1/3}FeO_3$ is found to be $680\pm3K$. The isomer shift value at room temperature is found to be 0.27 mm/s relative to the Fe metal, which is consistent with high-spin $Fe^{3+}$ charge states. Debye temperature far$Bi_{2/3}La_{1/3}FeO_3$ is found to be $305\pm5K$. The average hyperfine field $H_{hf}(T)$ of the $Bi_{2/3}La_{1/3}FeO_3$, shows a temperature dependence of $[H_{hf}(T)-H_{hf}(0)]/H_{hf}(0)=-0.42(T/T_N)^{3/2}-0.13(T/T_N)^{5/2}$ for $T/T_N<0.7$ indicative of spin-wave excitation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.135-135
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• 2010

In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

• Korean Journal of Mathematics
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• v.32 no.1
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• pp.83-95
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• 2024

The Quaternionic Dirac operator proves instrumental in tackling various challenges within spectral geometry processing and shape analysis. This work involves the introduction of the quaternionic Dirac operator on a symplectic submanifold of an exact symplectic product manifold. The self adjointness of the symplectic quaternionic Dirac operator is observed. This operator is verified for spin ${\frac{1}{2}}$ particles. It factorizes the Hodge Laplace operator on the symplectic submanifold of an exact symplectic product manifold. For achieving this a new complex structure and an almost quaternionic structure are formulated on this exact symplectic product manifold.

• Journal of the Korean Chemical Society
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• v.39 no.7
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• pp.501-507
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• 1995

The electronic structure of cis-$[Cr(cyclam)Cl_2]Cl$ has been investigated by the emission and excitation spectroscopy at 77K, and infrared and visible spectroscopy at room temperature. The ten electronic transitions due to spin-allowed and spin-forbidden are assigned. The zero-phonon line in the excitation spectrum splits into two components by $139\;cm^{-1}$, and it can be reproduced by modern ligand field theory. According to the results of ligand field analysis, we can confirm that nitrogen atoms of the cyclam ligand have a strong ${\sigma}$-donor character, but chloride ligand has weak ${\sigma}-$ and ${\pi}-$donor properties toward chromium(III) ion.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.897-907
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• 1997

Thin films of Bi4-xSmxTi3O12(0$\leq$x$\leq$2) were prepared on Pt/Ti/SiO2/Si(100) at $700^{\circ}C$ using spin-coating with sols derived from Bi-Sm-Ti complex alkoxides. From X-ray diffraction analysis, it was observed that Sm-substituted phases resembled ferroelectric Bi4Ti3O12 in structure. Variations of their lattice parameters depending on the amount of Sm-substitution showed that an anomalous structural distortion might exist at x=1. The grain sizes of the thin films decreased from 0.115 ${\mu}{\textrm}{m}$ to 0.078${\mu}{\textrm}{m}$ with increasing the amount of Sm-substitution. The dielectric constants and the remanent polarizations of the thin films decreased with increasing the amount of the Sm-substitution, which were related to decrease of the stereo-active Bi3+ ion contributing to polarization. However, these values were exceptionally high at x=1, compared to those of the other substituted phases. Such an anomaly suggests that the phase of x=1 has 1:1 chemical ordering between Sm and Bi in structure. The thin films of all compositions except x=2 showed ferroelectricity. The thin film of x=2 was paraelectric, whose grains were too fine to exhibit ferroelectricity.

• Bulletin of the Korean Chemical Society
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• v.30 no.5
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• pp.1113-1117
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• 2009

The one-dimensional coordination polymers, $[Cu^{II}(L)(NO_3)_2]_n$ (1) and {$[Cu^{II}(L)(NO_3)]{\cdot}2H_2O}_{2n} (2), were synthesized from $Cu(NO_3)_2{\cdot}3H_2O$ and 2-[(pyridin-3-ylmethyl)amino]ethanol (L, PMAE) in methanol by controlling the molar ratio of copper(II) salt. Copper(II) ion in 1 has one pyridine group of PMAE whose an aminoethanol group coordinates adjacent copper(II) ion. As the pyridine group is bonded to neighboring copper(II) ion, 1 becomes a one-dimensional chain. Contrary to 1, the structure of 2 shows that the oxygen atom of ethoxide group is bridged between two copper(II) ions, which forms a dinuclear complex. Additionally, the pyridine group of PMAE included one dinuclear unit is coordinated to the other dimeric one each other, which leads to a one-dimensional polymer. Due to the structural differences, 1 exhibits weak antiferromagnetic interaction, while 2 shows strong antiferromagnetic interaction. Due to direct spin exchange via oxygen of PMAE 2 has a much strong spin coupling than 1.

• Korean Journal of Materials Research
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• v.26 no.2
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• pp.84-89
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• 2016

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.