• 제목/요약/키워드: spin coating

검색결과 729건 처리시간 0.036초

저온 공정을 이용한 용액 기반 Sb-doped SnO2 투명 전도막의 전기적 및 광학적 특성 (Electrical and Optical Properties of Solution-Based Sb-Doped SnO2 Transparent Conductive Oxides Using Low-Temperature Process)

  • 구본율;안효진
    • 한국재료학회지
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    • 제24권3호
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    • pp.145-151
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    • 2014
  • Solution-based Sb-doped $SnO_2$ (ATO) transparent conductive oxides using a low-temperature process were fabricated by an electrospray technique followed by spin coating. We demonstrated their structural, chemical, morphological, electrical, and optical properties by means of X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, atomic force microscopy, Hall effect measurement system, and UV-Vis spectrophotometry. In order to investigate optimum electrical and optical properties at low-temperature annealing, we systemically coated two layer, four layer, and six layers of ATO sol-solution using spin-coating on the electrosprayed ATO thin films. The resistivity and optical transmittance of the ATO thin films decreased as the thickness of ATO sol-layer increased. Then, the ATO thin films with two sol-layers exhibited superb figure of merit compared to the other samples. The performance improvement in a low temperature process ($300^{\circ}C$) can be explained by the effect of enhanced carrier concentration due to the improved densification of the ATO thin films causing the optimum sol-layer coating. Therefore, the solution-based ATO thin films prepared at $300^{\circ}C$C exhibited the superb electrical (${\sim}7.25{\times}10^{-3}{\Omega}{\cdot}cm$) and optical transmittance (~83.1 %) performances.

지지체 투과저항과 코팅층의 두께가 PDMS 복합막의 에틸렌/질소의 투과성능에 미치는 영향 (Effect of Support Resistance & Coating Thickness on Ethylene/Nitrogen Separation of PDMS Composite Membranes)

  • 김정훈;최승학;박인준;이수복;강득주
    • 멤브레인
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    • 제14권1호
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    • pp.57-65
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    • 2004
  • PDMS (polydimethylsiloxane) 복합막을 통한 기체분리 공정에서 다공성 지지체의 투과저항과 PDMS 코팅두께가 에틸렌/질소의 분리성능(투과도, 선택도)에 미치는 영향에 관하여 조사하였다. 이를 위해 Pinnau 등이 제시한 복합막 투과저항 모델이론식〔1〕이 사용되었다. 지지체의 투과도 또는 투과저항은 PES (polyethersulfone)/NMP(N-methyl-2-pyrrolidone) 고분자 용액의 농도를 변화시키면서 조절하였다. 복합막은 PES 지지체 위에 n-hexane에 녹인 2액형 PDMS 용액을 spin coater를 사용해 코팅하여 제조하였다. 선택층의 코팅 두께는 spin coater의 회전속도를 통해 조절하였다. 투과기체 분리특성은 단일기체 투과도 측정 장치를 통해 조사하였으며, 지지체 및 복합막의 단면구조 및 코팅두께는 SEM (scanning electron microscope)을 통하여 확인하였다 얻어진 실험결과는 복합막의 투과저항모델의 이론식과 매우 잘 일치함을 확인 할 수 있었다. 에틸렌/질소의 분리에 있어 PDMS 막 고유의 선택도를 얻기 위해서는 지지체의 투과저항과 코팅층의 최적화가 중요함을 확인하였다.

Hot-air 공정을 이용한 무기 CsPbl2Br 페로브스카이트 태양전진 제작 연구 (Study of Inorganic CsPbI2Br Perovskite Solar Cell Using Hot-air Process)

  • 김리나;이동건;강동원;김은도;김제하
    • Current Photovoltaic Research
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    • 제10권4호
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    • pp.101-106
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    • 2022
  • We prepared a CsPbI2Br solution using Cesium iodide (CsI), Lead (II) bromide (PbBr2) and Lead (II) iodide (PbI2) materials into a polar solvent mixture of N,N-dimethylformamide (DMF) and Dimethyl sulfoxide (DMSO). A simple spin coating technique was used for the fabrication of CsPbI2Br absorber layer in the solution process. In order to prepare uniform coating of absorber film we adopted a hot-air process in assocation with the spin coating. It was confirmed that the thin film manufactured by the hot-air process had a higher absorption rate than that without it, and the optical band gap was measured 1.93 eV. The thin film of absorber was uniformly prepared and revealed the Black α-Cubic crystal phase as proved through X-ray diffraction analysis. Finally, a perovskite solar cell having an n-i-p structure was manufactured with a CsPbI2Br perovskite absorption layer. From the solar cell, we obtained a power conversion efficiency (PCE) of 5.97% in a forward measurement.

Transparent Sol-Gel Hybrid Dielectric Material Coatings for Low k Passivation Layer

  • Yang, Seung-Cheol;Oh, Ji-Hoon;Kwak, Seung-Yeon;Bae, Byeong-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1453-1456
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    • 2009
  • Transparent sol-gel hybrid dielectric material (hybrimer) coating films were fabricated by spin coating and photo or thermal curing of sol-gel derived oligosiloxane resins. Hybrimer coating films are suitable as the passivation layer of TFT in AMLCD due to low dielectric constant, small loss tangent, low leakage current density, high transmittance and thermal stability.

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스테레오 영상 정합을 위한 새로운 구조 정보 추출 알고리즘 (Simple Algorithm of Structure Features Extration for Stereo Image Matching)

  • 최환언
    • 한국인쇄학회지
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    • 제9권1호
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    • pp.1-11
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    • 1991
  • In this reseach, double-layered photoconductor consist of the carrier generation layer(CGL) of $\varepsilon$ type copper phthalocyanine thin film by an aqueous coating method and the carrier transport layer(CGL) of polyvinyl carbazol(PVK) by spin coating. We inverstigated effect of the surfactant solution and cathod electrolysis to the crystal type of $\varepsilon$-CuPc in CGL with TEM, SEM and X- ray diffraction spectroscopy and studied the mechanism of an aqueous coating for the preparation of CGL. The effect of the washing of CGL about the electrophotographic characteristics of the $\varepsilon$-CuPc/PVK doublelayered photoconductors is studied also.

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Shear-coating을 사용한 은 나노와이어 투명 전극 제조 및 특성 분석 (Preparation and characterization of silver nanowire transparent electrodes using shear-coating)

  • 조경수;홍기하;박준식;정중희
    • 한국표면공학회지
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    • 제53권4호
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    • pp.182-189
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    • 2020
  • Indium tin oxide (ITO) used a transparent electrode of a photoelectric device has a low sheet resistance and a high transmittance. However, ITO is disadvantageous in that the process cost is expensive, and the process time is long. Silver nanowires (AgNWs) transparent electrodes are based on a low cost solution process. In addition, it has attracted attention as a next-generation transparent electrode material that replaces ITO because it has similar electrical and optical characteristic to ITO, it is noted as a. AgNW thin films are mainly produced by spin-coating. However, the spin-coating process has a disadvantage of high material loss. In this study, the material loss was reduced by using about 2~10 ㎕ of AgNW solution on a (25 × 25) ㎟ substrate using the shear-coating method. It was also possible to align AgNWs in the drag direction by dragging the meniscus of the solution. The electro-optical properties of the AgNW thin film were adjusted by changing the experimental parameters that the amount of AgNWs suspension, the gap between the substrate and the blade, and the coating speed. As a result, AgNW thin films with a transmittance of 90.7 % at a wavelength of 550 nm and a sheet resistance of 15 Ω/□ was deposited and exhibited similar properties to similar AgNW transparent electrodes studied by other researchers.

Flexible AM-OLED를 위한 OTFT 기술 기반의 MIS 구조 C-V 특성 분석 (Analysis of C-V Characteristics of MIS Structure Based on OTFT Technology for Flexible AM-OLED)

  • 김중석;김병민;장종현;주병권;박정호
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.77-78
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    • 2006
  • 최근 flexible OLED의 구동에 사용하기 위한 유기박막트랜지스터(Organic Thin Film Transistor, OTFT)의 연구에서는 용매에 용해되어 spin coating이 가능한 재료의 개발에 관심을 두고 있다. 현재 pentacene으로는 아직 spin coating으로 제작할 수 있는 상용화된 제품이 없고 spin coating이 가능한 활성층 물질(active material)로 P3HT가 쓰이고 있다. 본 연구에서는 용해 가능한 P3HT 활성층 물질과 여러 종류의 용해 가능한 게이트 절연물(gate insulator, Gl)을 사용하여 안정된 소자를 구현할 수 있는 공정을 개발하는 목적으로 metal-insulator-semironductor(MIS) 소자를 제작하여 C-V 특성을 측정하고 분석하였다. 먼저 7mm${\times}$7mm 크기의 pyrex glass 시편 위에 바닥 전극으로 $1600{\AA}$ Au을 증착하고 spin coating 방식을 이용하여 PVP, PVA, PVK, BCB, Pl의 5종류의 게이트 절연층을 각각 형성하였고 그 위에 같은 방법으로 P3HT를 코팅하였다. P3HT 코팅 시 bake 공정의 유무와 spin rpm의 변화에 따른 P3HT의 두께를 측정하였다. Gl의 종류별로 주파수에 따른 capatltancc를 측정하여 비교, 분석하였다. C-V 측정 결과 PVP, PVA, PVK, BCB, Pl의 단위 면적당 capacitance 값은 각각 1.06, 2.73, 2.94, 3.43, $2.78nF/cm^2$로 측정되었다. Threshold voltage, $V_{th}$는 각각 -0.4, -0.7, -1.6, -0.1, -0.2V를 나타냈다. 주파수에 따른 capacitance 변화율을 측정한 결과 Gl 물질 모두 주파수가 높을수록 capacitance가 점점 감소하는 경향을 보였으나 1${\sim}$2nF 이내의 범위에서 작은 변화율만 나타냈다. P3HT의 두께와 bake 온도를 변화시켜 C-V 값을 측정한 결과 차이는 없었다. FE-SEM으로 관찰한 결과에서도 두께나 온도에 따른 P3HT의 표면 morphology 차이를 확인할 수 없었다. 본 연구에서 PVK와 P3HT의 조합이 수율(yield)면에서 가장 안정적이면서 $3.43\;nF/cm^2$의 가장 높은 capacitance 값을 나타내고 $V_{th}$ 값 또한 -1.6V로 가장 낮은 값을 보였다.

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ESD 기법을 이용한 투명전도막 형성 기술 (Transparent Electrode Forming Technology using ESD Coating Methode)

  • 김정수;김동수
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 추계학술대회 논문집
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    • pp.348-348
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    • 2009
  • The conductive coating method is used for various industrial fields. For example, Sputtering process is used to coat ITO layer in LCD or OLED panel manufacture process and fabricate a base layer of substrate of an electric printing device. However, conventional coating processes (beam sputtering, spin coating etc.) has a problems in the industrial manufacturing process. These processes have a very high cost and critical manufacturing environment as a vacuum process. Recently, many researchers have proposed various printing process instead of conventional coating processes. In this paper, we propose an ESD printing process in ITO coating layer and apply to fabricate a conductive coating film. Furthermore, the effect of the nozzle and also the applied voltage on different configuration of the nozzle head was also studied for better understanding of the Electro Static deposition process.

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실리카 에어로겔 박막의 극저 유전특성 (Ultralow Dielectric Properties of $SiO_2$ Aerogel Thin Films)

  • 현상훈;김중정;김동준;조문호;박형호
    • 한국세라믹학회지
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    • 제34권3호
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    • pp.314-322
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    • 1997
  • 극저 유전특성을 갖는 SiO2 에어로겔의 박막화의 층간 절연막으로써의 응용성이 연구되었다. 점도가 10~14cP인 SiO2 폴리머 졸을 이소프로판을 분위기 하에서 1000~7000m으로 p-Si(111) 웨이퍼 상에 스핀코팅한 습윤겔 박막을 25$0^{\circ}C$와 1160 psing 조건에서 초임계건조하여 0.5 g/㎤ 정도의 밀도(78% 기공율) 와 4000~21000$\AA$ 범위의 두께를 갖는 SiO2 에어로겔 박막을 제조하였다. 박막의 두께와 미세구조를 제어할 수 있는 주요 인자는 졸의 농도, 회전속도 및 습윤겔 숙성시간임을 알 수 있었다. SiO2 에어로겔 박막의 유전상수 값은 giga급 이상의 차세대 반도체 소자에 충분히 응용될 수 있을 정도로 낮은 2.0 정도이었다.

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원자층 증착법과 용액 공정법으로 성장한 전자 수송층 산화주석 박막의 페로브스카이트 태양전지 특성 (Characteristics of Tin Oxide Thin Film Grown by Atomic Layer Deposition and Spin Coating Process as Electron Transport Layer for Perovskite Solar Cells)

  • 김기현;정성진;양태열;임종철;장효식
    • 한국재료학회지
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    • 제33권11호
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    • pp.475-481
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    • 2023
  • Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO2 applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 ℃. PSC using ALD SnO2 as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO2 showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO2 layer was 0.75 mA/cm2 higher than that of the spin coated SnO2. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO2. Therefore ALD SnO2 is a candidate as a ETL for use in PSC vacuum deposition.