• 공업화학
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• 제9권1호
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• pp.121-128
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• 1998

삼중수소를 함유하는 수소동위원소 시설의 운용이나 취급 또는 핵융합소재의 관리기술분야에서는 기체크로마토그래피 분리법이 중요한 분석 및 농축기술중의 하나로 활용되고 있다. 수소, 중수소 및 삼중수소의 수소동위원소 혼합기체시료를 상용 기체크로마토그래피를 사용하여 분리하였다. 기체시료는 특별히 제작된 진공-시료주입장치를 통해 액체질소온도의 분위기로 유지된 분리컬럼을 통과하는 비활성 캐리어 기체의 흐름을 주입하였다. 10% 함량의 염화망간으로 부분-비활성화한 산화알루미늄 고정상에서 수소동위원소들이 완전히 분리됨을 확인할 수 있었다. 그리고 이성질체피크의 억제와 분리 용리시간이 단축되어 실제 수소동위원소의 분리 및 농축기술에 유용하게 적용할 수 있는 비교적 우수한 분리조건을 얻었다.

• 한국재료학회지
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• 제4권4호
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• pp.466-471
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• 1994

타이타니움이소프로폭사이드의 가수분해로 타이타니아 졸용액을 제조하고 그 특성을 조사하였다. 용매, 촉매 그리고 물의 양이 졸의 안정도에 미치는 영향을 조\ulcorner고, 서로 다른 온도에서 졸용액의 전단점도를 측정하여 그 각각의 gel time을 알아보았다. 안정한 조성의 졸용액을 이용하여 광학적으로 투명하고 균일한 타이타니아 박막을 제조할 수 있었다. 또한, 이차비선형 활성단을 도입한 후에도 좋은 박막을 제조할 수 있었다. 제조된 박막은 3~5kV, 50~$100^{\circ}C$ 온도범위에서 코로나 분극처리 하였다. 632.8nm He-Ne레이저를 이용하여 측정한 일차 전기 광학 상수, $r_{33}$는 1.5~5pm/V로서 경시 안정성을 나타내었다.

• 한국재료학회지
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• 제21권2호
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• pp.115-119
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• 2011

Si Nanowire (NW) field effect transistors (FETs) were fabricated on hard Si and flexible polyimide (PI) substrates, and their electrical characteristics were compared. Si NWs used as channels were synthesized by electroless etching method at low temperature, and these NWs were refined using a centrifugation method to get the NWs to have an optimal diameter and length for FETs. The gate insulator was poly(4-vinylphenol) (PVP), prepared using a spin-coating method on the PI substrate. Gold was used as electrodes whose gap was 8 ${\mu}m$. These gold electrodes were deposited using a thermal evaporator. Current-voltage (I-V) characteristics of the device were measured using a semiconductor analyzer, HP-4145B. The electrical properties of the device were characterized through hole mobility, $I_{on}/I_{off}$ ratio and threshold voltage. The results showed that the electrical properties of the TFTs on PVP were similar to those of TFTs on $SiO_2$. The bending durability of SiNWs TFTs on PI substrate was also studied with increasing bending times. The results showed that the electrical properties were maintained until the sample was folded about 500 times. But, after more than 1000 bending tests, drain current showed a rapid decrease due to the defects caused by the roughness of the surface of the Si NWs and mismatches of the Si NWs with electrodes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.44-44
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• 2008

To date, rubbing has been widely used to align LC molecules uniformly. Although rubbing can be simple, it has fundamental problems such as the generation of defects by dust and static electricity, and difficulty in achieving a uniform LC alignment on a large substrate. Therefore, non contact alignment has been investigated. Ion beam induced alignment method, which provides controllability, nonstop process, and high resolution display. In this study, we investigated liquid crystal (LC) alignment with ion beam (IB) that non contact alignment technique on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide under various ion beam angles. In this experiment, Polyimide layer was coated on glass by spin-coating and Voltage-transmittance(VT) and response time characteristics of the TN cell were measured by a LCD evaluation system. The good characteristics of the nematic liquid crystal (NLC) alignment with the ion beam exposure polyimide surface was observed. The tilt angle of NLC on the PI surface with ion beam exposure can be measured under $1^{\circ}$ for all of irradiation angles. In addition, it can be achieved the good EO properties, and residual DC property of the ion beam aligned TN cell on polyimide surface.

• 한국전기전자재료학회논문지
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• 제27권4호
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• pp.226-231
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• 2014

Thin thermistor films of solutions with nickel and manganese oxides were prepared by metal-organic decomposition (MOD). The structural properties of the thin films were investigated as a function of annealing temperature. Field emission scanning electron microscope (FE-SEM) results indicated that the thin films had a thin thickness, smooth and dense surface. The crystallization temperature of $414.9^{\circ}C$ was confirmed from thermogavimetric-differential thermal analysis (TG-DTA) curve. A single phase of cubic spinel structure was obtained for the thin film annealed from $700^{\circ}C$ to $800^{\circ}C$, which was confirmed from the X-ray diffraction (XRD). From the selected area electron diffraction (SAED) in high resolution transmission electron microscope (HRTEM), the nano grains (2~3 nm) of spinel phase with (311) and (222) planes were detected for the thin film annealed at $500^{\circ}C$, which could be applicable to read-out integrated circuit (ROIC) substrate of the uncooled microbolometer with low processing temperature.

• 한국전기전자재료학회논문지
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• 제27권7호
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• pp.452-457
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• 2014

Copper manganite thin films were fabricated on $SiN_x/Si$ substrate by metal organic decomposition (MOD) process. They were burned-out at $400^{\circ}C$ and annealed at various temperatures ($400{\sim}800^{\circ}C$) for 1h in ambient atmosphere. Their micro-structure and negative temperature coefficient of resistance (NTCR) characteristics were analyzed for micro-bolometer application. The copper manganite film with a cubic spinel structure was well developed at $500^{\circ}C$ which confirmed by XRD and HRTEM analysis. It showed a low resistivity ($47.5{\Omega}{\cdot}cm$) at room temperature and high NTCR characteristics of $-4.12%/^{\circ}C$ and $-2.15%/^{\circ}C$ at room temperature and $85^{\circ}C$, implying a good thin film for micro-bolometer application. Furthermore, its crystallinity was enhanced with increasing temperature to $600^{\circ}C$. However, the appearance of secondary phase at temperatures higher than $600^{\circ}C$ lead to deteriorate the NTCR characteristics.

• 한국전기전자재료학회논문지
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• 제31권3호
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• pp.129-134
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• 2018

Herein, we report the manufacture of high-performance, ambipolar organic field-effect transistors (OFETs) and complementary-like electronic circuitry based on a blended, polymeric, semiconducting film. Relatively high and well-balanced electron and hole mobilities were achieved by incorporating a small amount of ionic additives. The equivalent P-channel and N-channel properties of the ambipolar OFETs enabled the manufacture of complementary-like inverter circuits with a near-ideal switching point, high gain, and good noise margins, via a simple blanket spin-coating process with no additional patterning of each active P-type and N-type semiconductor layer.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2010년도 추계학술발표논문집 1부
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• pp.488-490
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• 2010

최근 심각한 환경오염 문제와 화석 에너지 고갈로 차세대 청정 에너지 개발에 대한 중요성이 증대되고 있다. 그중에서 태양정지는 공해가 적고, 자원이 무한적이며 반 영구적인 수명을 가지고 있어 미래에너지 문제를 해결할 수 있는 에너지원으로 기대되고 있다. 본 연구에서는 P3HT(regioregular poly(3-hexylthiophene))와 PCBM(fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester)을 전자 도너와 억셉터 물질을 하나의 브랜드로 광 활성층을 형성하는 BHJ(bulk hetero junction)구조를 갖는 고분자 유기 박막 태양전지를 각각 Toluene, Mono-Chlorobenzene, Dichlorobenzene에 $60^{\circ}C$, 200rpm으로 약 12시간동안 1wt%로 교반(Stirring)한 후에 중량비(1:1 wt%)로 혼합하여 스핀코팅(Spin-coating)으로 제작하였고, 완성된 소자의 광활성층 면적은 0.04cm2이며, $150^{\circ}C$에서 후속 열처리 공정을 통해 특성 향상이 측정 되었다. 태양전지 소자 구조는 Glass / ITO / PEDOT:PSS / P3HT : PCBM / Al이다. 전류-전압, FF(Fill Factor), 변환효율 측정을 위해 solar simulator를 AM1.5 조건(100 mW/cm2)으로 이용하였으며, 소자의 최대 전류밀도는 12mA/$cm^2$, 개방전압은 0.566V이고 F.F(Fill Factor)는 55.2%이고 변환효율은 3.7%이다. 후속 열처리후 더욱 좋은 성능을 갖게 되었고, 최대 효율은 Dichl orobenzene일 때 이다.

• 한국안광학회지
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• 제3권1호
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• pp.223-228
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• 1998

$SiO_2-TiO_2-M_xO_y$ (M = Co, Cr or Cu)계의 비정질 박막을 현미경용 슬라이드 유리판 위에 전구체 용액을 스핀코팅방법으로 제조하였다. 전구체 용액은 tetraethyl orthosilicate, titanium trichloride, 그리고 코발트질산염, 크롬질산염, 구리질산염을 사용하여 합성하였다. X-선 회절분석 (${\theta}-2{\theta}$ scan)을 통하여 박막내에 $Co_3O_4$, $Cr_2O_3$, CuO 결정의 석출이 없는 비정질 박막임을 확인하였다. 코발트는 4면체배위의 $ Co^{2+}$로, 크롬은 4면체정배위의 $Cr^{6+}$로, 구리는 8면체배위의 $Cu^{2+}$로 존재하였다. 이 비정질박막의 표면에서 crack과 texture는 발견할 수 없었으며 파단면에서 박막악과 유리판 간의 계면은 균일한 조직을 보였다.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.193-196
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• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.