• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.382-383
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• 2013

Gate-controlled spin-orbit interaction parameter is a key factor for developing spin-Field Effect Transistor (Spin-FET) in a quantum well structure because the strength of the spin-orbit interaction parameter decides the spin precession angle [1]. Many researches show the control of spin-orbit interaction parameter in n-type quantum channels, however, for the complementary logic device p-type quantum channel should be also necessary. We have calculated the spin-orbit interaction parameter and the effective mass using the Shubnikov-de Haas (SdH) oscillation measurement in a GaSb two-dimensional hole gas (2DHG) structure as shown in Fig 1. The inset illustrates the device geometry. The spin-orbit interaction parameter of $1.71{\times}10^{11}$ eVm and effective mass of 0.98 $m^0$ are obtained at T=1.8 K, respectively. Fig. 2 shows the gate dependence of the spin-orbit interaction parameter and the hole concentration at 1.8 K, which indicates the spin-orbit interaction parameter increases with the carrier concentration in p-type channel. On the order hand, opposite gate dependence was found in n-type channel [1,2]. Therefore, the combined device of p- and n-type channel spin transistor would be a good candidate for the complimentary logic device.

• Journal of IKEEE
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• v.19 no.1
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• pp.41-44
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• 2015

Silicon trench process for bulk fin field effect transistor (finFET) is suggested without using chemical mechanical polishing (CMP) that cause contamination problems with chemical stuff. This process uses thickness difference of photo resistor spin coating and silicon nitride sacrificial layer. Planarization of silicon oxide and silicon trench formation can be performed with etching processes. In this work 50 nm silicon trench is fabricated with AZ 1512 photo resistor and process results are introduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.117-117
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2007.12a
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• pp.102-102
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2007.12a
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• pp.112-113
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2006.11a
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• pp.72-72
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• 2006

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.301.1-301.1
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.59-59
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• 2010

Graphene has attracted much interest because of its fascinating electronic structure with excellent electron mobility. However, there are some difficulties in making graphene of large and uniform area for real applications. One alternative is graphite oxide. Since graphite oxide is water soluble, it can be sprayed or spin-coating onto any substrates for applications such as Transparent Conducting Film (TCF) and Field Effect Transistor (FET). In this talk, chemical and physical properties of graphite oxide will be discussed. In addition, possible applications made of graphite oxide (GO) will be introduced.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.154.2-154.2
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• 2008

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.35-40
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• 1993

A FET(field effect transistor) type lipid sensor was fabricated uy immobilizing lipase enzyme on the gate of pH-ISFET($SiO_{2}/Si_{3}N_{4}$). A water soluble polymer, polyvinyl alcohol(PVA) was modified with 1-methyl-4-(formyl-styryl) pyridinium methosulfate(SbQ) to give a photosensitive membrane(PVA-SbQ) in which lipase was immobilized. The optimum photolithographic conditions were ; spin coating speed $5,000{\sim}6,000$ rpm. UV exposure time $20{\sim}30$ seconds, developing time in water $30{\sim}40$ seconds, and vacuum drying time 45 min. at room temperature with the suspension containing PVA-SbQ aqueous solution(SbQ 1mol%, 10 wt %) $200{\mu}L$, bovine serum albumin (BSA) 7.5 mg, and lipase 10 mg. The lipid sensor showed good linear calibration curve in the range of $10{\sim}100$ mM triacetin as a lipid sample.