High mobility InAs/AlSb 2DEG HEMT on GaAs for SPIN-FET and Effect of p-/n-doping on InSb/GaAs

  • Shin, S.H. (Center for SPINTRONICS Resarch, Korea Institute of Science & Technology) ;
  • Song, J.D. (Center for SPINTRONICS Resarch, Korea Institute of Science & Technology) ;
  • Kim, S.Y. (Center for SPINTRONICS Resarch, Korea Institute of Science & Technology) ;
  • Kim, H.J. (Center for SPINTRONICS Resarch, Korea Institute of Science & Technology) ;
  • Chang, J.Y. (Center for SPINTRONICS Resarch, Korea Institute of Science & Technology) ;
  • Han, S.H. (Center for SPINTRONICS Resarch, Korea Institute of Science & Technology)
  • Published : 2008.12.10