• 제목/요약/키워드: spice

검색결과 742건 처리시간 0.026초

TFT-LCD 특성 분석을 위한 poly-Si TFT 소자 모델링 및 회로 시뮬레이션 (Modeling of Poly-Si TFT and Circuit Simulation for the Analysis of TFT-LCD Characteristics)

  • 손명식;류재일;심성융;장진;유건호
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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    • pp.314-317
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    • 2000
  • In order to analyze the characteristics of complicated TFT-LCD (Thin Film Transistor-Liquid Crystal Display) circuits, it is indispensible to use simulation programs. In this study, we present a systematic method of extracting the input parameters of poly-Si TFT for Spice simulation. This method is applied to two different types of poly-Si TFTs fabricated in our group with good results. Among the Spice simulators, Pspice has the graphic user interface feature making the composition of complicated circuits easier. We added successfully a poly-Si TFT model on the Pspice simulator, which would contribute to efficient simulations of poly-Si TFT-LCD pixels and arrays.

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CMOS OTA를 이용한 펄스폭 변조회로 (A Pulse With Modulation Circuit using CMOS OTA)

  • 이은진;김희준;정원섭
    • 전자공학회논문지SC
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    • 제41권5호
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    • pp.43-48
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    • 2004
  • CMOS OTA를 이용한 PWM 회로를 제안하였다. 제안된 회로는 발진주파수가 공급전압 및 온도에 대한 의존성을 배제할 수 있고, OTA의 바이어스 전류에 의해 주파수를 선형적으로 제어할 수 있다는 특징을 갖는다. H-SPICE 시뮬레이션을 통하여 제안된 회로의 동작의 타당성을 입증하였고 0.35㎛ CMOS 공정에 의한 layout 결과도 함께 제시하였다.

CMOS 소자를 이용한 저전압 안정화 회로 설계 (Design of the CMOS Low-Voltage Regulation Circuit)

  • 김영민;이근호;황종선;김종만;박현철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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    • pp.124-127
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    • 2002
  • A CMOS voltage regulation circuit for use at low-voltage is proposed. Circuits for a positive and for a negative current regulation are presented and are designed with commercial CMOS technology. The voltage regulation that is stable over ambient temperature variations is an important component of most data acquisition systems. These results are verified by the H-SPICE simulation $0.8{\mu}m$ parameter. As the result, the temperature dependency of output voltage is $0.57mV/^{\circ}C$ and the power dissipation is 1.8 mV on 5V supply voltage.

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POWER LIGBT의 모델링에 관한 연구 (A study on Mode ling of the Power LIGBT)

  • 임경문;정세진;이현석;조호열;김영식;성만영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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    • pp.249-252
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    • 1991
  • I-V characteristics of LIGBT is studied by SPICE simulation which includes device parameters and process parameters. Analysis and modeling of ON-resistance are discussed in this paper. Compare with experimental values, SPICE simulation and modeling results show that our simulation is valid for LIGBT.

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