• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.38-39
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• 2003

전기적 저항이 낮은 투명 박막 물질은 현재 flat panel display, electroluminescent device, thin film transistor, solar cell 등 여러 분야에서 연구되고 있다. 그 중에서도 특히 ZnO：Ga는 현재 많이 쓰이는 ITO보다 화학적, 열적으로 안정한 상태를 보이는 투명 전도 산화막 물질로써 본 연구에서는 분광타원법을 이용하여 ZnO：Ga의 광학적 특성을 분석하였다. 본 연구를 위한 시료는 온도에 따른 ZnO：Ga／Sapphire 박막, $O_2$의 압력에 따른 ZnO：Ga／Sapphire 박막, Ga의 doping 농도에 따른 ZnO：Ga／Sapphire 박막으로 제작하였으며, 위상변조형 분광타원계(spectroscopic Phase Modulated Ellipsometer, Jobin-Yvon, UVISEL)를 사용하여 측정대역을 0.74 ~ 4.5 eV, 입사각을 70$^{\circ}$로 하여 측정하였다. (중략)

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.178-183
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• 2021

This paper describes a dynamic spectroscopic ellipsometry based on dual-wavelength calibration. DSE provides ellipsometric parameters at rates above 20 Hz, but the interferometer's sensitivity to temperature makes it difficult for that proposed system to maintain stable 𝜟k over long periods of time. To solve this problem, we set up an additional path in the DSE to perform simulations of the polarization phase calibration method using dual wavelengths. Through simulation, we were able to eliminate most of the polarization phase error and maintain a stable 𝜟k in the long-term stability experiment for 10 hours. This is the result that the 𝜟k stability of the proposed system is improved tens of times compared to the existing system.

• Journal of Korean Ophthalmic Optics Society
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• v.10 no.4
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• pp.267-272
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• 2005

We deposited thin films of organic light-emitting-material $Alq_3$(alumina quinoline) on silicon and slide-glass substrates using thermal evaporation method, and measured spectra of ellipsometry angles ${\Delta}$ and ${\Psi}$ in the photon-energy range of 1.5~5.0 eV using a variable angle spectroscopic ellipsometer. The optical constants, refractive index and extinction coefficient, of $Alq_3$ were determined via the dispersion parameters extracted from the curve-fitting process based on Jellison-Modine dispersion function. The reliability of determined optical constants were verified through the comparison of measured and simulated transmittance curves and the good agreement between simulated absorption-coefficient curves and absorbance spectra measured using a spectrophotometer.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.204-210
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• 2008

ZnO thin films were grown on a glass by RF sputtering system with RF power 100W and oxygen partial pressure of $0%{/sim}30%$. Elliptic constants were measured by using a phase modulated spectroscopic ellipsometer and analyzed with the Tauc-Lorentz dispersion formula and best fit method in the range of 1.5 to 3.8eV. Also, scanning electron microscope(SEM) was used for the analysis of surface crystallization condition. From elliptic constants spectra, optical constants, thickness and roughness of ZnO films were evaluated. Total thickness of ZnO films obtained by ellipsometry showed good agreement with SEM data. It was found that the grain size of the films were getting smaller with increasing oxygen partial pressure. Band-gap of ZnO films increase with the oxygen partial pressure. These findings clearly indicate that optical properties of ZnO films are strongly dependent on the oxygen partial pressure. It could be explained that increasing the oxygen partial pressure induced high crystalline imperfection in the ZnO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.190-191
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• 2006

We have investigated optical properties of Si/graded-$Si_{1-x}Ge_x$/Si heterostructures grown by reduced pressure chemical vapor deposition. Compared to standard condition using Si(100) substrate and growth temperature of $650^{\circ}C$, Si(111) resulted in low growth rate and high Ge mole fraction. Also samples grown at higher temperatures exhibited increased growth rate and reduced Ge mole fraction. The features regarding both substrate temperature and crystal orientation, representing high incorporation of silicon supplied from gas stream played as a key parameter, illustrate that reaction control were prevailed in this process growth condition. Using secondary ion mass spectroscopy and spectroscopic ellipsometry, microscopic changes in atomic components could be analyzed for Si/graded-$Si_{1-x}Ge_x$/Si heterostructures.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.458-462
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• 2007

Spectroscopic ellipsometry is an excellent technique for determining dielectric function. To obtain critical point energy, standard analytic critical point expression is used conventionally for second derivatives of dielectric function which might increase high frequency noise than signal. However, reciprocal-space analysis offers several advantages for determining critical point parameters in optical and other spectra, for example the separation of baseline, information, and high frequency noise in low-, medium-, high-index Fourier coefficient, respectively. We used reciprocal Fourier analysis for removing noise and determining critical point of ZnCdSe alloy.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.134-140
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• 2007

Optical structure of $V_{2}O_{5}$ thin films were analyzed and confirmed, the films were deposited in oxygen partial pressure 0% and 10% by RF magnetron sputtering system. Measurements of the elliptic constants were made in the range of $0.75{\sim}4.0\;eV$ by using phase modulated spectroscopic ellipsometer. The elliptic constants of the thin films were analyze by Double Amorphous dispersion relation. The calculated n, k spectra of $V_{2}O_{5}$ layer were obtained over the range of $0.75{\sim}4.0\;eV$ photon energy. SEM and XRD measurements were also made to validate the ellipsometric analysis and they give good agreement with the structural properties of the films. It was found that optical structure of the $V_{2}O_{5}$ layer has a 3 phase(roughness/film/substrate) and optical absorption properties are greatly depend on the partial pressure of the oxygen.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.666-672
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• 1996

The optical property of CdTe thin film is important for applications such as the compound semiconductor type solar cells. CdTe films are prepared by RF sputtering at various substrate temperature between $25^{\circ}C$ and $300^{\circ}C$, then, annealed in argon gas environment at $400^{\circ}C$. The annealing process of the thin film caused variation in the film structure and the composition of films. The deformation of CdTe thin film was observed by X-ray diffractometry. After annealing, the grain size increased and the portion of the non-crystalline CdTe reduced. Futhermore, the structure of sputtered CdTe film grown at the substrate temperature more than $250^{\circ}C$ was enhanced in the (111) direction of zincblend structure. There was a discrepancy, in the spectroscopic ellipsometer spectrum, between the single crystal CdTe and the sputtered CdTe thin films, especially in the region over 3.2eV. An oxidation layer was found on the CdTe thin film by spectroscopic ellipsometry analysis.

• New Physics: Sae Mulli
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• v.68 no.12
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• pp.1281-1287
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• 2018

In this study, $Al_xGa_{1-x}N$ films were grown on (0001) sapphire substrates by using metal-organic chemical vapor deposition (MOCVD). The crystallinity of the grown films was examined with X-ray diffraction (XRD) patterns. The surfaces and the chemical properties of the $Al_xGa_{1-x}N$ films were investigated using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The optical properties of the $Al_xGa_{1-x}N$ film were studied in a wide photon energy range between 2.0 ~ 8.7 eV by using spectroscopic ellipsometry (SE) at room temperature. The data obtained by using SE were analyzed to find the critical points of the pseudodielectric function spectra, $<{\varepsilon}(E)>=<{\varepsilon}_1(E)>+i<{\varepsilon}_2(E)>$. In addition, the second derivative spectra, $d^2<{\varepsilon}(E)>/dE^2$, of the pseudodielectric function for the $Al_xGa_{1-x}N$ films were numerically calculated to determine the critical points (CPs), such as the $E_0$, $E_1$, and $E_2$ structure. For the four samples (x = 0.18, 0.21, 0.25, 0.29) between a composition of x = 0.18 and x = 0.29, changes in the critical points (blue-shifts) with increasing Al composition at 300 K for the $Al_xGa_{1-x}N$ film were observed via ellipsometric measurements for the first time.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.78-78
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• 2012

In this presentation I will review the expanding thermal plasma chemical vapour deposition (ETP-CVD) technology, a deposition technology capable of reaching ultrahigh deposition rates. High rate deposition of a-Si:H, ${\mu}c$-Si:H, a-SiNx:H and silicon nanocrystals will be discussed and their various applications, mainly for photovoltaic applications demonstrated. An important aspect over the years has been the fundamental investigation of the growth mechanism of these films. The various in situ (plasma) and thin film diagnostics, such as Langmuir probes, retarding field analyzer, (appearance potential) mass spectrometry and cavity ring absorption spectroscopy, spectroscopic ellipsometry to name a few, which were successfully applied to measure radical and ion density, their temperature and kinetic energy and their reactivity with the growth surface. The insights gained in the growth mechanism provided routes to novel applications of the ETP-CVD technology, such as the ultrahigh high growth rate of silicon nanorystals and surface passivation of c-Si surfaces.